JPS57133670A - Structure of lateral transistor - Google Patents

Structure of lateral transistor

Info

Publication number
JPS57133670A
JPS57133670A JP1867781A JP1867781A JPS57133670A JP S57133670 A JPS57133670 A JP S57133670A JP 1867781 A JP1867781 A JP 1867781A JP 1867781 A JP1867781 A JP 1867781A JP S57133670 A JPS57133670 A JP S57133670A
Authority
JP
Japan
Prior art keywords
layer
region
shaped
boundary section
freedom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1867781A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Shinichi Yamagiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, Pioneer Electronic Corp filed Critical Pioneer Corp
Priority to JP1867781A priority Critical patent/JPS57133670A/en
Publication of JPS57133670A publication Critical patent/JPS57133670A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To remove parasitic effect, and to increase the degree of freedom of a design by augmenting the concentration of most of a two conduction type region boundary section contacting with a separation region in the lateral transistor using two conductive type regions surrounded by one conduction type region as bases. CONSTITUTION:An N<-> layer 2 is grown to a P<-> substrate 1 to which a layer such as an N<+> buried layer 7 is shaped in an epitaxial form, and an element region 2a functioning as a base region is insularly separated by a P type diffusion layer 3. An N<+> region 6 reaching a buried layer 7 is formed to the boundary section of the P layer 3 and the region 2a in combination with a base extracting electrode, and P type regions 4, 5 are shaped into the reaction 2a at predetermined intervals and used as an emitter and a collector. The N<+> layer 6 formed to the boundary section may be shaped so as to have a slight clearance with the buried layer 7. Accordingly, parasitic effect due to the inflow to the substrate 1 of emitter injecting currents can be reduced, and the degree of freedom of the design of a circuit can be enlarged.
JP1867781A 1981-02-10 1981-02-10 Structure of lateral transistor Pending JPS57133670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1867781A JPS57133670A (en) 1981-02-10 1981-02-10 Structure of lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1867781A JPS57133670A (en) 1981-02-10 1981-02-10 Structure of lateral transistor

Publications (1)

Publication Number Publication Date
JPS57133670A true JPS57133670A (en) 1982-08-18

Family

ID=11978232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1867781A Pending JPS57133670A (en) 1981-02-10 1981-02-10 Structure of lateral transistor

Country Status (1)

Country Link
JP (1) JPS57133670A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109274A (en) * 1983-11-18 1985-06-14 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS61280664A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Lateral transistor
KR100455695B1 (en) * 2001-11-14 2004-11-15 주식회사 케이이씨 Lateral transistor and its manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100082A (en) * 1972-03-30 1973-12-18
JPS4912358A (en) * 1972-05-15 1974-02-02
JPS5017579A (en) * 1973-06-15 1975-02-24
JPS51138386A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Lateral type transistor
JPS52122085A (en) * 1975-09-19 1977-10-13 Toyo Dengu Seisakushiyo Kk Pnp semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100082A (en) * 1972-03-30 1973-12-18
JPS4912358A (en) * 1972-05-15 1974-02-02
JPS5017579A (en) * 1973-06-15 1975-02-24
JPS51138386A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Lateral type transistor
JPS52122085A (en) * 1975-09-19 1977-10-13 Toyo Dengu Seisakushiyo Kk Pnp semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109274A (en) * 1983-11-18 1985-06-14 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS61280664A (en) * 1985-05-20 1986-12-11 Sanyo Electric Co Ltd Lateral transistor
KR100455695B1 (en) * 2001-11-14 2004-11-15 주식회사 케이이씨 Lateral transistor and its manufacturing method

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