KR880013256A - 헤테로접합형 바이폴라트랜지스터 및 그 제조방법 - Google Patents

헤테로접합형 바이폴라트랜지스터 및 그 제조방법 Download PDF

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Publication number
KR880013256A
KR880013256A KR1019880002868A KR880002868A KR880013256A KR 880013256 A KR880013256 A KR 880013256A KR 1019880002868 A KR1019880002868 A KR 1019880002868A KR 880002868 A KR880002868 A KR 880002868A KR 880013256 A KR880013256 A KR 880013256A
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KR
South Korea
Prior art keywords
region
heterojunction bipolar
emitter
collector
manufacturing
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KR1019880002868A
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English (en)
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KR0120927B1 (ko
Inventor
히로지 가와이
Original Assignee
오가 노리오
소니 가부시키가이샤
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Application filed by 오가 노리오, 소니 가부시키가이샤 filed Critical 오가 노리오
Publication of KR880013256A publication Critical patent/KR880013256A/ko
Application granted granted Critical
Publication of KR0120927B1 publication Critical patent/KR0120927B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

헤테로접합형 바이폴라트랜지스터 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 A-F는 본원 발명에 의한 코렉터톱형의 헤테로접합 바이폴라트랜지스터의 일례를 나타내는 공정순서의 단면도. 제 1 도 G 및 H는 각기 제 1 도 E 및 F의 평면도. 제 2 도 A-H는 본원 발명에 의한 콜렉터톱형의 헤테로접합 바이폴라트랜지스터의 다른 예를 나타내는 공정순서의 단면도, 제 2 도 I는 제 2 도 H의 평면도.

Claims (2)

  1. 에미터 또는 콜렉터영역과 외부 베이스영역이 서로 측면을 접하여 형성되고, 상기 에미터 또는 콜렉터영역과 외부 베이스영역의 경계를 포함하는 영역위에 진성베이스영역이 형성되고, 이 진성베이스영역 위에 콜렉터 또는 에미터영역이 형성되어 이루어지는 헤테로접합형 바이폴라트랜지스터.
  2. 기판위에 에미터 또는 콜렉터영역과 외부 베이스영역을 서로 측면이 접하도록 형성하는 공정과, 이어서 상기 에미터 또는 콜렉터영역과 상기 외부 베이스영역의 경계를 포함하는 영역위에 에피택셜성장에 의해 진성베이스영역 및 콜렉터 또는 에미터영역을 차례로 형성하는 공정을 가진 것을 특징으로 하는 헤테로접합형 바이폴라트랜지스터의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880002868A 1987-04-30 1988-03-18 헤테로접합형 바이폴라트랜지스터 KR0120927B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP87-107352 1987-04-30
JP62107352A JP2581071B2 (ja) 1987-04-30 1987-04-30 ヘテロ接合型バイポーラトランジスタ及びその製造方法並びにそれを用いたメモリセル

Publications (2)

Publication Number Publication Date
KR880013256A true KR880013256A (ko) 1988-11-30
KR0120927B1 KR0120927B1 (ko) 1997-10-20

Family

ID=14456880

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880002868A KR0120927B1 (ko) 1987-04-30 1988-03-18 헤테로접합형 바이폴라트랜지스터

Country Status (5)

Country Link
EP (1) EP0289343B1 (ko)
JP (1) JP2581071B2 (ko)
KR (1) KR0120927B1 (ko)
CA (1) CA1315017C (ko)
DE (1) DE3874949T2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243716B (en) * 1988-11-02 1993-05-05 Hughes Aircraft Co Self-aligned,planar heterojunction bipolar transistor and method of forming the same
US5159423A (en) * 1988-11-02 1992-10-27 Hughes Aircraft Company Self-aligned, planar heterojunction bipolar transistor
US5068756A (en) * 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
DE4000599A1 (de) * 1990-01-11 1991-07-18 Standard Elektrik Lorenz Ag Heterobipolar-transistor mit reduzierter basis-kollektor-kapazitaet
FR2726125A1 (fr) * 1994-10-25 1996-04-26 Thomson Csf Composant semiconducteur a transistors bipolaires, stabilises thermiquement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE621467A (ko) * 1961-08-17
DE3016553A1 (de) * 1980-04-29 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Planartransistor, insbesondere fuer i(pfeil hoch)2(pfeil hoch) l-strukturen
EP0197052B1 (en) * 1984-09-21 1989-08-30 AT&T Corp. A novel semiconductor device
JPS61187271A (ja) * 1985-02-14 1986-08-20 Sony Corp ヘテロ接合型バイポ−ラトランジスタ

Also Published As

Publication number Publication date
EP0289343A1 (en) 1988-11-02
DE3874949D1 (de) 1992-11-05
CA1315017C (en) 1993-03-23
EP0289343B1 (en) 1992-09-30
JP2581071B2 (ja) 1997-02-12
JPS63272076A (ja) 1988-11-09
KR0120927B1 (ko) 1997-10-20
DE3874949T2 (de) 1993-04-01

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