KR940008112A - 트랜지스터 및 그 제조 방법 - Google Patents

트랜지스터 및 그 제조 방법 Download PDF

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Publication number
KR940008112A
KR940008112A KR1019930019586A KR930019586A KR940008112A KR 940008112 A KR940008112 A KR 940008112A KR 1019930019586 A KR1019930019586 A KR 1019930019586A KR 930019586 A KR930019586 A KR 930019586A KR 940008112 A KR940008112 A KR 940008112A
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KR
South Korea
Prior art keywords
base
emitter
low
collector
resistance
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KR1019930019586A
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English (en)
Inventor
에이. 이란마네쉬 알리
에드워드 비엔 데이비드
존 그루비시취 마이클
Original Assignee
존 엠. 클락 3세
내쇼날 세미컨덕터 코포레이션
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Application filed by 존 엠. 클락 3세, 내쇼날 세미컨덕터 코포레이션 filed Critical 존 엠. 클락 3세
Publication of KR940008112A publication Critical patent/KR940008112A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H01L29/0826—Pedestal collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6221—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
    • H03K17/6228—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means using current steering means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H03K3/2885—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit the input circuit having a differential configuration

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

베이스-에미터 접합이 베이스를 가로질러 있지 않지만 베이스의 상부 표면 내측에서 마무리되는 바이플라트랜지스터가 제공되어 있다. 상기 트랜지스터는 전류를 얻는데 사용될 수 있는 긴 에미터 주변 영역 및 전류를 얻는데 사용될 수 있는 2개의 에미터 변이상(예컨대 3개의 변)을 지니는데, 이는 낮은 베이스 저항, 낮은 에미터저항, 낮은 콜렉터 저항, 낮은 베이스-콜렉터 캐패시턴스, 및 작은 사이즈를 달성할 수 있다.

Description

트랜지스터 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 트랜지스터에 대한 평면도.
제3도 및 제4도는 제2도 트랜지스터의 수직 단면도.
제5도는 제2도 트랜지스터 일부에 대한 수직단면도로서, 제2도 트랜지스터의 한 에미터 측으로 부터 발생된 베이스전류를 예시한 도면.
제6도내지 제8도는 본 발명에 따른 트랜지스터에 대한 평면도.

Claims (1)

  1. 콜렉터, 상기 콜렉터 상부에 놓여 있으며 상기 콜렉터와 접촉하는 베이스, 및 상기 베이스의 상부 표면 상부에 놓여 있는 1에미터를 포함하며, 상기 제1에미터 및 상기 베이스는 제1상부표면의 경계부분으로 부터 상기상부표면 내측으로 연장되어 있고 상기 상부 표면 내측에는 마무리되는 제1의 인접하는 베이스-에미터 접합을형성하는 것을 특징으로 하는 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930019586A 1992-09-25 1993-09-24 트랜지스터 및 그 제조 방법 KR940008112A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95152492A 1992-09-25 1992-09-25
US92-07/951,524 1992-09-25

Publications (1)

Publication Number Publication Date
KR940008112A true KR940008112A (ko) 1994-04-28

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Country Status (5)

Country Link
US (2) US5387813A (ko)
EP (1) EP0596601B1 (ko)
JP (1) JP3564152B2 (ko)
KR (1) KR940008112A (ko)
DE (1) DE69331217T2 (ko)

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US5969749A (en) * 1994-11-04 1999-10-19 Canon Kabushiki Kaisha Apparatus and method for suspending a reproduction operation reproducing image information when the arrival of a call from a communication line is detected

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Also Published As

Publication number Publication date
US5387813A (en) 1995-02-07
DE69331217D1 (de) 2002-01-10
EP0596601A3 (en) 1994-09-07
JPH06216138A (ja) 1994-08-05
EP0596601A2 (en) 1994-05-11
DE69331217T2 (de) 2002-07-25
US5508552A (en) 1996-04-16
JP3564152B2 (ja) 2004-09-08
EP0596601B1 (en) 2001-11-28

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