KR850004355A - 직열 접속 트랜지스터를 가진 반도체 집적회로 - Google Patents

직열 접속 트랜지스터를 가진 반도체 집적회로 Download PDF

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Publication number
KR850004355A
KR850004355A KR1019840006763A KR840006763A KR850004355A KR 850004355 A KR850004355 A KR 850004355A KR 1019840006763 A KR1019840006763 A KR 1019840006763A KR 840006763 A KR840006763 A KR 840006763A KR 850004355 A KR850004355 A KR 850004355A
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KR
South Korea
Prior art keywords
transistor
integrated circuit
semiconductor integrated
series connection
series connected
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Application number
KR1019840006763A
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English (en)
Inventor
겐지(외 3) 기네고
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR850004355A publication Critical patent/KR850004355A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0828—Combination of direct and inverse vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7327—Inverse vertical transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

직열 접속 트랜지스터를 가진 반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 순역 양 방향 동작에서의 성능이 대럭 동일의 npn트랜지스터의 구조를 도시한 단면도.
제3도A는 직열 접속의 트랜지스터 회로를 도시한 회로도.
제3도B는 제3도A의 회로를 중래 트랜지스터에 의해서 구성한 구조를 도시한 단면도.
제4도는 본 발명에 의한 제3도A의 회로의 구성을 도시한 단면도.
제5도A는 중래의 구성에 의한 트랜지스터 직열 접속 구조의 평면 레이아웃트 패턴 도면.
제5도B는 본 발명의 구조에 의한 트랜지스터 직열접속 구조의 평면 레이 아웃트 패턴 도면.

Claims (4)

  1. 제1의 트랜지스터의 콜렉터와, 제2의 트랜지스터의 에미터를 공통 영역으로서 형성하고, 양 트랜지스터로 구성된 직열 접속 회로를 가진 것을 특징으로 하는 직열 접속 트랜지스터를 가진 반도체 집적회로.
  2. 상회 직열 접속 회로가 다수개 마련되어서 되는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 직열 접속 트랜지스터를 가진 반도체 집적회로.
  3. 상기 제1의 트랜지스터가 순방향 트랜지스터, 상기 제2의 트랜지스터가 역방향 트랜지스터로서 마련되는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 직열 접속 트랜지스터를 가진 반도체 집적회로.
  4. 상기 제1, 제2의 트랜지스터는, 베이스 영역의 측부에 마련된 다결정 반도체 층을 전극, 취출 영역으로서 되는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 직열 접속 트랜지스터를 가진 반도체 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840006763A 1983-11-02 1984-10-30 직열 접속 트랜지스터를 가진 반도체 집적회로 KR850004355A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58204830A JPS6098659A (ja) 1983-11-02 1983-11-02 直列接続トランジスタを有する半導体集積回路
JP58-204830 1983-11-02

Publications (1)

Publication Number Publication Date
KR850004355A true KR850004355A (ko) 1985-07-11

Family

ID=16497086

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840006763A KR850004355A (ko) 1983-11-02 1984-10-30 직열 접속 트랜지스터를 가진 반도체 집적회로

Country Status (3)

Country Link
EP (1) EP0140369A1 (ko)
JP (1) JPS6098659A (ko)
KR (1) KR850004355A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62208670A (ja) * 1986-03-07 1987-09-12 Toshiba Corp 半導体装置の製造方法
KR950005463B1 (ko) * 1992-06-29 1995-05-24 재단법인한국전자통신연구소 에미터 커플드 논리 반도체 장치
DE4445565C2 (de) * 1994-12-20 2002-10-24 Korea Electronics Telecomm Säulen-Bipolartransistor und Verfahren zu seiner Herstellung
US8866253B2 (en) * 2012-01-31 2014-10-21 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
EP3866198A1 (en) * 2020-02-17 2021-08-18 Nxp B.V. Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
EP0140369A1 (en) 1985-05-08
JPS6098659A (ja) 1985-06-01

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