KR850004355A - 직열 접속 트랜지스터를 가진 반도체 집적회로 - Google Patents
직열 접속 트랜지스터를 가진 반도체 집적회로 Download PDFInfo
- Publication number
- KR850004355A KR850004355A KR1019840006763A KR840006763A KR850004355A KR 850004355 A KR850004355 A KR 850004355A KR 1019840006763 A KR1019840006763 A KR 1019840006763A KR 840006763 A KR840006763 A KR 840006763A KR 850004355 A KR850004355 A KR 850004355A
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- integrated circuit
- semiconductor integrated
- series connection
- series connected
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 6
- 238000000605 extraction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0828—Combination of direct and inverse vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 순역 양 방향 동작에서의 성능이 대럭 동일의 npn트랜지스터의 구조를 도시한 단면도.
제3도A는 직열 접속의 트랜지스터 회로를 도시한 회로도.
제3도B는 제3도A의 회로를 중래 트랜지스터에 의해서 구성한 구조를 도시한 단면도.
제4도는 본 발명에 의한 제3도A의 회로의 구성을 도시한 단면도.
제5도A는 중래의 구성에 의한 트랜지스터 직열 접속 구조의 평면 레이아웃트 패턴 도면.
제5도B는 본 발명의 구조에 의한 트랜지스터 직열접속 구조의 평면 레이 아웃트 패턴 도면.
Claims (4)
- 제1의 트랜지스터의 콜렉터와, 제2의 트랜지스터의 에미터를 공통 영역으로서 형성하고, 양 트랜지스터로 구성된 직열 접속 회로를 가진 것을 특징으로 하는 직열 접속 트랜지스터를 가진 반도체 집적회로.
- 상회 직열 접속 회로가 다수개 마련되어서 되는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 직열 접속 트랜지스터를 가진 반도체 집적회로.
- 상기 제1의 트랜지스터가 순방향 트랜지스터, 상기 제2의 트랜지스터가 역방향 트랜지스터로서 마련되는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 직열 접속 트랜지스터를 가진 반도체 집적회로.
- 상기 제1, 제2의 트랜지스터는, 베이스 영역의 측부에 마련된 다결정 반도체 층을 전극, 취출 영역으로서 되는 것을 특징으로 하는 특허청구의 범위 제1항 기재의 직열 접속 트랜지스터를 가진 반도체 집적회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58204830A JPS6098659A (ja) | 1983-11-02 | 1983-11-02 | 直列接続トランジスタを有する半導体集積回路 |
JP58-204830 | 1983-11-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR850004355A true KR850004355A (ko) | 1985-07-11 |
Family
ID=16497086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840006763A KR850004355A (ko) | 1983-11-02 | 1984-10-30 | 직열 접속 트랜지스터를 가진 반도체 집적회로 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0140369A1 (ko) |
JP (1) | JPS6098659A (ko) |
KR (1) | KR850004355A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62208670A (ja) * | 1986-03-07 | 1987-09-12 | Toshiba Corp | 半導体装置の製造方法 |
KR950005463B1 (ko) * | 1992-06-29 | 1995-05-24 | 재단법인한국전자통신연구소 | 에미터 커플드 논리 반도체 장치 |
FR2728393A1 (fr) * | 1994-12-20 | 1996-06-21 | Korea Electronics Telecomm | Transistor bipolaire a colonnes et procede de fabrication de celui-ci |
US8866253B2 (en) * | 2012-01-31 | 2014-10-21 | Infineon Technologies Dresden Gmbh | Semiconductor arrangement with active drift zone |
EP3866198A1 (en) * | 2020-02-17 | 2021-08-18 | Nxp B.V. | Semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS561556A (en) * | 1979-06-18 | 1981-01-09 | Hitachi Ltd | Semiconductor device |
-
1983
- 1983-11-02 JP JP58204830A patent/JPS6098659A/ja active Pending
-
1984
- 1984-10-30 EP EP84113062A patent/EP0140369A1/en not_active Withdrawn
- 1984-10-30 KR KR1019840006763A patent/KR850004355A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0140369A1 (en) | 1985-05-08 |
JPS6098659A (ja) | 1985-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |