KR850003478A - 절연기판 실리콘내에 형성된 레이터랄 바이폴라 트랜지스터 - Google Patents

절연기판 실리콘내에 형성된 레이터랄 바이폴라 트랜지스터 Download PDF

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KR850003478A
KR850003478A KR1019840006240A KR840006240A KR850003478A KR 850003478 A KR850003478 A KR 850003478A KR 1019840006240 A KR1019840006240 A KR 1019840006240A KR 840006240 A KR840006240 A KR 840006240A KR 850003478 A KR850003478 A KR 850003478A
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South Korea
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region
base
insulating substrate
silicon
transistor
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KR1019840006240A
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English (en)
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모투 나까노
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야마모도 다꾸마
후지쓰가부시끼가이샤
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Publication of KR850003478A publication Critical patent/KR850003478A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66265—Thin film bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H01L29/1008—Base region of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

절연기판 실리콘내에 형성된 레이터랄 바이폴라 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 반도체기판내에 형성된 종래의 레이터랄 바이플라 트랜지스터의 개략 횡단면도.
제2도는 절연기판상의 실리콘상에 형성된 종래의 레이터랄 바이플라 트랜지스터의 개략 횡단면도.
제3도는 제2도내의 종래의 레이터랄 바이플라 트랜지스터의 개략평면도.
제4도는 본 발명에 의해 SOI 기판상에 형성된 레이터랄 바이플라 트랜지스터의 개략 평면도.

Claims (6)

  1. 제도전형의 베이스 영역, 제1도전형의 베이스 접촉영역, 제2도전형의 에미터 영역 및 상기 제2도전형의 콜렉터 영역을 갖는 절연기판상의 실리콘(SOI) 내에 형성된 레이터랄 바이플라 트랜지스터에 있어서 상기 베이스영역이 상기 에미터 영역과 에미터-베이스 접합 그리고 상기 콜렉터 영역과 베이스-콜렉터 영역을 분담하고 있는 제1 베이스 영역과, 상기 제1 베이스 영역을 상기 베이스 접촉영역에 연결하고 상기 콜렉터 영역을 따라 연장되는 제2 베이스 영역과, 상기 기판의 하부 절연체와 표면끼리 접착되어 있는 상기 베이스 영역과, 그리고 상기 제2도전형과 반대 도전형인 상기 제1도전형을 포함하는 절연기판상의 실리콘내에 형성되는 레이터랄 바이플라 트랜지스터.
  2. 제1항에 있어서, 상기 베이스 영역은 다수의 상기 제2 베이스 영역들을 포함하는 절연기판상의 실리콘내에 형성되는 레이터랄 바이플라 트랜지스터.
  3. 제1항에 있어서, 상기 콜렉터 영역은 다수의 부콜렉터 영역들로 분할되는 절연기판상의 실리콘내에 형성되는 레이터랄 바이플라 트랜지스터.
  4. 제3항에 있어서, 상기 부콜렉터 영역은 장방형으로 된 절연기판상의 실리콘내에 형성되는 레이터랄 바이플라 트랜지스터.
  5. 제1, 2, 3 또는 4항에 있어서, 기판상에 형성된 상기 두 개의 레이터랄 바이플라 트랜지스터들은 공통으로 소유되는 콜렉터 영역에 의해 조합되는 절연기판상의 실리콘내에 형성되는 레이터랄 바이플라 트랜지스터.
  6. 제1, 2, 3 또는 4항에서 기판상에 형성된 상기 두 개의 1 레이터랄 바이플라 트랜지스터들은 공통으로 소유되는 베이스 접촉영역에 의해 조합되는 절연기판상의 실리콘내에 형성되는 레이터랄 바이플라 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840006240A 1983-10-12 1984-10-10 절연기판 실리콘내에 형성된 레이터랄 바이폴라 트랜지스터 KR850003478A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP?58-191188 1983-10-12
JP58191188A JPS6081864A (ja) 1983-10-12 1983-10-12 ラテラル型トランジスタ

Publications (1)

Publication Number Publication Date
KR850003478A true KR850003478A (ko) 1985-06-17

Family

ID=16270360

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840006240A KR850003478A (ko) 1983-10-12 1984-10-10 절연기판 실리콘내에 형성된 레이터랄 바이폴라 트랜지스터

Country Status (3)

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EP (1) EP0138563A3 (ko)
JP (1) JPS6081864A (ko)
KR (1) KR850003478A (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63312674A (ja) * 1987-06-16 1988-12-21 Nissan Motor Co Ltd 薄膜半導体装置
DE58909822D1 (de) * 1989-05-11 1997-11-27 Siemens Ag Verfahren zur Herstellung einer integrierten Schaltungsstruktur mit einem lateralen Bipolartransistor
US5994739A (en) * 1990-07-02 1999-11-30 Kabushiki Kaisha Toshiba Integrated circuit device
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
US5460982A (en) * 1993-07-02 1995-10-24 Siemens Aktiengesellschaft Method for manufacturing lateral bipolar transistors
US5395775A (en) * 1993-07-02 1995-03-07 Siemens Aktiengesellschaft Method for manufacturing lateral bipolar transistors
EP0632489A3 (de) * 1993-07-02 1996-09-11 Siemens Ag Herstellungsverfahren für lateralen Bipolartransistor.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
DE3174777D1 (en) * 1980-10-23 1986-07-10 Fairchild Camera Instr Co Method of fabricating integrated circuit structure
FR2501912A1 (fr) * 1981-03-13 1982-09-17 Efcis Transistor bipolaire lateral sur isolant et son procede de fabrication
EP0068072A2 (en) * 1981-07-01 1983-01-05 Rockwell International Corporation Lateral PNP transistor and method

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Publication number Publication date
JPS6081864A (ja) 1985-05-09
EP0138563A3 (en) 1987-01-28
EP0138563A2 (en) 1985-04-24

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