KR920005297A - 반도체집적회로 장치 - Google Patents

반도체집적회로 장치 Download PDF

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Publication number
KR920005297A
KR920005297A KR1019910013547A KR910013547A KR920005297A KR 920005297 A KR920005297 A KR 920005297A KR 1019910013547 A KR1019910013547 A KR 1019910013547A KR 910013547 A KR910013547 A KR 910013547A KR 920005297 A KR920005297 A KR 920005297A
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South Korea
Prior art keywords
conductive
region
well region
conductive well
misfet
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KR1019910013547A
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English (en)
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KR100223352B1 (ko
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도시로 다까하시
가즈오 고이데
Original Assignee
가나이 쯔도무
가부시끼가이샤 히다찌세이사꾸쇼
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Publication of KR920005297A publication Critical patent/KR920005297A/ko
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Publication of KR100223352B1 publication Critical patent/KR100223352B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

내용 없음

Description

반도체집적회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예 I인 ASIC의 주요부 단면도.
제2도는 제1도의 ASIC및 그것을 내장하는 패키지의 사시도,
제3도는 제1도의 ASIC의 칩배치도.

Claims (7)

  1. 제1도전형의 반도체기판 주면의 제1영역에 배치되며, 제2도전형 채널의 MISFET를 갖는 버퍼회로에 제1전원이 공급되고, 상기 반도체기판 주면의 제1영역과 다른 제2영역에 배치되며, 상보형 MISFET를 갖는 내부회로에 상기 제1전원에 대해서 적어도 상기 반도체기판 위에서 독립이며, 또한 전위가 같은 제2전원이 공급되는 반도체집적회로장치에 있어서, 상기 버퍼회로의 MISFET를 상기 반도체기판의 주면부에 형성한 제1도전형웰영역의 주면에 구성하고, 이 제1도전형웰영역, 상기 반도체기판 각각의 사이에 양자 사이를 전기적으로 분리하는 분리영역을 구성한 반도체집적회로장치.
  2. 특허청구의 범위 제1항에 있어서, 상기 분리영역은 상기 제1도전형웰영역의 주위를 덮는 제2도전형 반도체 영역으로 구성되고, 이 제2도전형반도체영역은 상기 내부회로에 공급되는 제2전원이 상기 제1도전형웰영역, 상기 반도체기판 각각에 대해서 역바이어스로 되는 전원이 공급되는 반도체집적회로장치.
  3. 특허청구의 범위 제2항에 있어서, 상기 버퍼회로는 상기 제2도전형채널의 MISFET및 제1도전형채널의 MISFET를 갖는 상보형 MISFET로 구성되는 반도체집적회로장치.
  4. 특허청구의 범위 제3항에 있어서, 상기 버퍼회로의 상보형 MISFET의 제2도전형 채널의 MISFET는 상기 제1도전형웰영역의 주면에 구성되며, 제1도전형 채널의 MISFET는 제2도전형웰영역의 주면에 구성되고, 상기 분리영역은 상기 제1도전형웰영역, 상기 반도체기판 각각의 사이에만 구성되는 반도체집적회로장치.
  5. 특허청구의 범위 제4항에 있어서, 상기 버퍼회로이 제2도전형 채널의 MISFET가 형성된 제1도전형웰영역, 상기 반도체기판 각각이 사이에만 상기 분리영역이 구성되고, 상기 내부회로의 상보형 MISFET의 제2도전형 채널의 MISFET, 상기 반도체기판 각각의 사이에는 상기 분리영역이 구성되지 않는 반도체집적회로장치.
  6. 특허청구의 범위 제1항에 있어서, 상기 버퍼회로는 반도체기판 주면의 제1영역에 여러개 배치되고, 이 여러개 배치된 버퍼회로중 인접하는 버퍼회로 각각의 분리영역은 일체로 구성되는 반도체집적회로장치.
  7. 특허청구의 범위 제1항에 있어서, 상기 버퍼회로는 반도체기판 주면의 제1영역에 여러개 배치되고, 이 여러개 배치된 버퍼회로 각각의 제1도전형 웰영역, 또는 제1도전형 웰영역 및 제2도전형 웰영역은 서로 분리되고, 또는 상기 여러개 배치된 버퍼회로중 소정수마다의 버퍼회로의 제1도전형 웰영역, 또는 제1도전형 웰영역 및 제2도전형 웰영역 사이는 서로 분리되고, 이 서로 분리된 제1도전형 웰영역,또는 제1도전형 웰영역 및 제2도전형 웰영역에는 상기 제1전원이 독립적으로 공급되는 반도체집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019910013547A 1990-08-21 1991-08-06 반도체 집적 회로 장치 KR100223352B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02220337A JP3074003B2 (ja) 1990-08-21 1990-08-21 半導体集積回路装置
JP2-220337 1990-08-21

Publications (2)

Publication Number Publication Date
KR920005297A true KR920005297A (ko) 1992-03-28
KR100223352B1 KR100223352B1 (ko) 1999-10-15

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US (1) US5311048A (ko)
JP (1) JP3074003B2 (ko)
KR (1) KR100223352B1 (ko)

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JP3254865B2 (ja) * 1993-12-17 2002-02-12 ソニー株式会社 カメラ装置
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JPH1041475A (ja) * 1996-07-23 1998-02-13 Mitsubishi Electric Corp 半導体集積回路装置及びその製造方法
JPH10189749A (ja) * 1996-12-27 1998-07-21 Toshiba Corp 半導体集積回路装置、半導体集積回路装置の多電源供給方法、半導体集積回路装置の多電源供給プログラムを記録した機械読み取り可能な記録媒体
US6683336B1 (en) 1996-12-27 2004-01-27 Kabushiki Kaisha Toshiba Semiconductor integrated circuit, supply method for supplying multiple supply voltages in semiconductor integrated circuit, and record medium for storing program of supply method for supplying multiple supply voltages in semiconductor integrated circuit
US6838320B2 (en) * 2000-08-02 2005-01-04 Renesas Technology Corp. Method for manufacturing a semiconductor integrated circuit device
US6025616A (en) * 1997-06-25 2000-02-15 Honeywell Inc. Power distribution system for semiconductor die
JP4014708B2 (ja) * 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
US20020149112A1 (en) * 1999-07-08 2002-10-17 Houston Theodore W. Selectively increased interlevel capacitance
EP1071130A3 (en) * 1999-07-14 2005-09-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device interconnection structure comprising additional capacitors
WO2001028062A1 (en) * 1999-10-08 2001-04-19 Packard Bioscience Company Electrical device shock hazard protection system
US7170115B2 (en) * 2000-10-17 2007-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device and method of producing the same
DE10300687A1 (de) * 2003-01-10 2004-07-22 Infineon Technologies Ag Integrierte Halbleiterschaltung insbesondere Halbleiterspeicherschaltung und Herstellungsverfahren dafür
JP4318511B2 (ja) * 2003-08-26 2009-08-26 三洋電機株式会社 昇圧回路
WO2008155085A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Elektrische schaltung mit vertikaler kontaktierung
GB2466313A (en) 2008-12-22 2010-06-23 Cambridge Silicon Radio Ltd Radio Frequency CMOS Transistor

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JPH0286166A (ja) * 1988-09-22 1990-03-27 Seiko Epson Corp 多敷居値ゲートアレイ装置

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JPH04102370A (ja) 1992-04-03
KR100223352B1 (ko) 1999-10-15
JP3074003B2 (ja) 2000-08-07
US5311048A (en) 1994-05-10

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