KR910010728A - 복합형 직접회로소자 - Google Patents

복합형 직접회로소자 Download PDF

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Publication number
KR910010728A
KR910010728A KR1019900018865A KR900018865A KR910010728A KR 910010728 A KR910010728 A KR 910010728A KR 1019900018865 A KR1019900018865 A KR 1019900018865A KR 900018865 A KR900018865 A KR 900018865A KR 910010728 A KR910010728 A KR 910010728A
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KR
South Korea
Prior art keywords
integrated circuit
hybrid integrated
circuit devices
single crystal
mos transistor
Prior art date
Application number
KR1019900018865A
Other languages
English (en)
Other versions
KR940009361B1 (ko
Inventor
가즈오 기하라
히로유키 나카자와
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910010728A publication Critical patent/KR910010728A/ko
Application granted granted Critical
Publication of KR940009361B1 publication Critical patent/KR940009361B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

복합형 집적회로소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도 a∼m은 본 발명의 실시예의 각 공정의 단면도이다.

Claims (1)

  1. 실리콘단결정(20)표면부분에 선택적으로 형성된 에피택셜성장층(23)에 P채널형MOS트랜지스터 및 바이폴라소자가 설치되고, 노출된 실리콘단결정표면부분에 N채널형 MOS트랜지스터 및 CCD소자가 설치된 것을 특징으로 복합형 집적회로소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018865A 1989-11-21 1990-11-21 복합형 직접회로소자 KR940009361B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1302477A JPH07105458B2 (ja) 1989-11-21 1989-11-21 複合型集積回路素子
JP01-302477 1989-11-21

Publications (2)

Publication Number Publication Date
KR910010728A true KR910010728A (ko) 1991-06-29
KR940009361B1 KR940009361B1 (ko) 1994-10-07

Family

ID=17909421

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018865A KR940009361B1 (ko) 1989-11-21 1990-11-21 복합형 직접회로소자

Country Status (3)

Country Link
US (1) US5319235A (ko)
JP (1) JPH07105458B2 (ko)
KR (1) KR940009361B1 (ko)

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US5488003A (en) * 1993-03-31 1996-01-30 Intel Corporation Method of making emitter trench BiCMOS using integrated dual layer emitter mask
KR0123751B1 (ko) * 1993-10-07 1997-11-25 김광호 반도체장치 및 그 제조방법
JPH0897411A (ja) * 1994-09-21 1996-04-12 Fuji Electric Co Ltd 横型高耐圧トレンチｍｏｓｆｅｔおよびその製造方法
US6445043B1 (en) * 1994-11-30 2002-09-03 Agere Systems Isolated regions in an integrated circuit
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6281562B1 (en) * 1995-07-27 2001-08-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device which reduces the minimum distance requirements between active areas
US6320617B1 (en) 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
JPH1070187A (ja) * 1996-08-28 1998-03-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6297070B1 (en) 1996-12-20 2001-10-02 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
KR100253372B1 (ko) * 1997-12-08 2000-04-15 김영환 반도체 소자 및 그 제조방법
US6175147B1 (en) * 1998-05-14 2001-01-16 Micron Technology Inc. Device isolation for semiconductor devices
US6674134B2 (en) * 1998-10-15 2004-01-06 International Business Machines Corporation Structure and method for dual gate oxidation for CMOS technology
US6147366A (en) * 1999-02-08 2000-11-14 Intel Corporation On chip CMOS optical element
US6469362B2 (en) * 2000-02-15 2002-10-22 Winbond Electronics Corp. High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same
US7326655B2 (en) * 2005-09-29 2008-02-05 Tokyo Electron Limited Method of forming an oxide layer

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NL7212509A (ko) * 1972-09-15 1974-03-19
JPS5269587A (en) * 1975-12-08 1977-06-09 Hitachi Ltd Device and manufacture for high voltage resisting semiconductor
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
JPS53106552A (en) * 1977-02-28 1978-09-16 Toshiba Corp Waveform shaping circuit
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
JPS5943545A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
JPS59177960A (ja) * 1983-03-28 1984-10-08 Hitachi Ltd 半導体装置およびその製造方法
JPS60132367A (ja) * 1983-12-20 1985-07-15 Nec Corp 電荷転送装置
JPS60141157U (ja) * 1984-02-25 1985-09-18 ソニー株式会社 電荷結合素子
FR2569055B1 (fr) * 1984-08-07 1986-12-12 Commissariat Energie Atomique Circuit integre cmos et procede de fabrication de zones d'isolation electriques dans ce circuit integre
DE3583575D1 (de) * 1984-10-17 1991-08-29 Hitachi Ltd Komplementaere halbleiteranordnung.
JPS61110457A (ja) * 1984-11-05 1986-05-28 Nec Corp 半導体装置
JPS61270859A (ja) * 1985-05-27 1986-12-01 Oki Electric Ind Co Ltd Ｃｍｏｓ型半導体装置の製造方法
US4922318A (en) * 1985-09-18 1990-05-01 Advanced Micro Devices, Inc. Bipolar and MOS devices fabricated on same integrated circuit substrate
US4912054A (en) * 1987-05-28 1990-03-27 Texas Instruments Incorporated Integrated bipolar-CMOS circuit isolation process for providing different backgate and substrate bias
US4825275A (en) * 1987-05-28 1989-04-25 Texas Instruments Incorporated Integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias
JPS6436073A (en) * 1987-07-31 1989-02-07 Toshiba Corp Manufacture of semiconductor device
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
US4926233A (en) * 1988-06-29 1990-05-15 Texas Instruments Incorporated Merged trench bipolar-CMOS transistor fabrication process
JPH0770703B2 (ja) * 1989-05-22 1995-07-31 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH07105458B2 (ja) 1995-11-13
US5319235A (en) 1994-06-07
KR940009361B1 (ko) 1994-10-07
JPH03161964A (ja) 1991-07-11

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