KR910017628A - 반도체 기억장치 - Google Patents
반도체 기억장치 Download PDFInfo
- Publication number
- KR910017628A KR910017628A KR1019910004143A KR910004143A KR910017628A KR 910017628 A KR910017628 A KR 910017628A KR 1019910004143 A KR1019910004143 A KR 1019910004143A KR 910004143 A KR910004143 A KR 910004143A KR 910017628 A KR910017628 A KR 910017628A
- Authority
- KR
- South Korea
- Prior art keywords
- memory cell
- semiconductor memory
- cell transistor
- transistor group
- mos
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명에 관한 반도체 장치를 도시한 단면도, 제 2도 본 발명에 관한 반도체 장치의 메모리 셀패턴을 도시한 평면도, 제 5도는 본 발명에 따른 반도체 장치를 도시한 평면도.
Claims (1)
- MOS형 메모리 셀 트랜지스터(7a, 7b)를 적어도 2개이상 직렬로 접속한 메모리 셀 트랜지스터군을 구비하고, 상기 메모리 셀 트랜지스터군을 구성하는 MOS형 메모리 셀 트랜지스터 중 적어도 1개의 MOS형 메모리 셀 트랜지스터의 소스(3) 및 드레일(4)를 단락하는 배선층(8')를 갖는 것을 특징으로 하는 반도체 기억장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2064112A JPH03266462A (ja) | 1990-03-16 | 1990-03-16 | 半導体記憶装置 |
| JPP02-064112 | 1990-03-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910017628A true KR910017628A (ko) | 1991-11-05 |
| KR940005897B1 KR940005897B1 (ko) | 1994-06-24 |
Family
ID=13248665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910004143A KR940005897B1 (ko) | 1990-03-16 | 1991-03-15 | 반도체 기억 장치 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0447976A1 (ko) |
| JP (1) | JPH03266462A (ko) |
| KR (1) | KR940005897B1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0514850B1 (en) * | 1991-05-20 | 1996-08-21 | Matsushita Electronics Corporation | Method for producing a MIS type semiconductor device |
| JPH08107191A (ja) * | 1994-05-05 | 1996-04-23 | Advanced Micro Devices Inc | 半導体装置のトランジスタアレイおよびトランジスタアレイの形成方法 |
| FR2751778B1 (fr) * | 1996-07-23 | 1998-11-06 | Sgs Thomson Microelectronics | Memoire accessible en lecture seulement |
| JP2002289705A (ja) * | 2001-03-23 | 2002-10-04 | Fujitsu Ltd | 半導体メモリ |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57109365A (en) * | 1980-12-26 | 1982-07-07 | Hitachi Ltd | Semiconductor ic device |
| GB2102623B (en) * | 1981-06-30 | 1985-04-11 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductors memory device |
| JPS6240766A (ja) * | 1985-08-17 | 1987-02-21 | Sanyo Electric Co Ltd | 半導体読出し専用メモリ |
| JPH0746703B2 (ja) * | 1985-11-20 | 1995-05-17 | 三洋電機株式会社 | Ｒｏｍ半導体装置の製造方法 |
| JPS6324663A (ja) * | 1986-07-17 | 1988-02-02 | Toshiba Corp | 半導体装置の製造方法 |
-
1990
- 1990-03-16 JP JP2064112A patent/JPH03266462A/ja active Pending
-
1991
- 1991-03-15 KR KR1019910004143A patent/KR940005897B1/ko not_active IP Right Cessation
- 1991-03-15 EP EP91104009A patent/EP0447976A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03266462A (ja) | 1991-11-27 |
| KR940005897B1 (ko) | 1994-06-24 |
| EP0447976A1 (en) | 1991-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR900013380A (ko) | 전압 제어회로 | |
| KR860003659A (ko) | 반도체집적회로장치 | |
| KR850002670A (ko) | 마스터 슬라이스 반도체 장치 | |
| KR880011809A (ko) | 불휘발성 반도체기억장치 | |
| KR890012398A (ko) | Mos형 반도체장치의 입력보호회로 | |
| KR900002558A (ko) | 출력회로 | |
| KR890011209A (ko) | 듀일 슬로프 파형 발생회로 | |
| KR910010728A (ko) | 복합형 직접회로소자 | |
| KR900013654A (ko) | 반도체 장치 | |
| KR910017628A (ko) | 반도체 기억장치 | |
| KR910020896A (ko) | 반도체집적회로 | |
| KR920010906A (ko) | 반도체 기억장치 | |
| KR890013771A (ko) | 반도체장치 | |
| KR900017164A (ko) | 반도체장치 | |
| KR910016005A (ko) | 반도체 집적회로 | |
| KR950020965A (ko) | 반도체 장치 | |
| KR930003414A (ko) | 반도체 집적 회로 장치 | |
| KR910017624A (ko) | 반도체집적회로장치 | |
| KR900013655A (ko) | 반도체 회로 | |
| KR900004040A (ko) | 반도체 집적회로 디바이스 | |
| KR920001711A (ko) | 반도체집적회로 | |
| KR880013170A (ko) | 반도체 기억장치 | |
| KR920018932A (ko) | 반도체장치 | |
| KR880006702A (ko) | 고집적도 및 고속의 반도체메모리장치 | |
| KR910017424A (ko) | 반도체 집적회로 장치의 메모리셀 회로 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20070531 Year of fee payment: 14 |
|
| LAPS | Lapse due to unpaid annual fee |