KR900002558A - 출력회로 - Google Patents

출력회로 Download PDF

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Publication number
KR900002558A
KR900002558A KR1019890010405A KR890010405A KR900002558A KR 900002558 A KR900002558 A KR 900002558A KR 1019890010405 A KR1019890010405 A KR 1019890010405A KR 890010405 A KR890010405 A KR 890010405A KR 900002558 A KR900002558 A KR 900002558A
Authority
KR
South Korea
Prior art keywords
gate
source
transistor
mos transistor
potential
Prior art date
Application number
KR1019890010405A
Other languages
English (en)
Other versions
KR920005356B1 (ko
Inventor
마사지 우에노
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900002558A publication Critical patent/KR900002558A/ko
Application granted granted Critical
Publication of KR920005356B1 publication Critical patent/KR920005356B1/ko

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00369Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

Abstract

내용 없음.

Description

출력회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 출력회로의 1실시예를 도시한 도면.

Claims (1)

  1. 트레인과 소스가 제1전위(VCC)와 출력단자(20)사이에 삽입된 제1MOS트랜지스터(16)와, 이 제1MOS트랜지스터(16)의 게이트와 소스사이에 드레인과 소스가 접속되면서 게이트와 드레인이 서로 접속된 제2MOS트랜지스터(17), 상기 제1MOS트랜지스터(16)의 게이트와 상기 출력단자(20)사이에 삽입된 정전압소자(21), 상기 제1전위(VCC)와 상기 제1MOS트랜지스터(16)의 게이트사이에 삽입된 제1레벨시프트용 트랜지스터(12), 드레인과 소스가 상기 제1레벨시프트용 트랜지스터(12)의 제어단자와 제2전원(VSS)사이에 삽입되고 게이트에 제1제어신호가 공급되는 제3MOS트랜지스터(14), 드레인과 소스가 상기 정전압소자(21)를 매개로 상기 출력단자(20)와 제2전위(VSS)사이에 삽입되고 게이트에 상기 제1제어신호가 공급되는 제4MOS트랜지스터(7), 이 제4MOS트랜지스터(7)의 게이트와 제2전위(VSS)사이에 드레인과 소스가 접속되면서 게이트와 드레인이 서로 접속된 제5MOS트랜지스터(8), 상기 제1전위(VCC)와 상기 제4MOS트랜지스터(7)의 게이트사이에 삽입된 제2레벨시프트용 트랜지스터(1) 및, 드레인과 소스가 상기 제2레벨시프트용 트랜지스터(1)의 제어단자와 제2전위(VSS)사이에 삽입되고 게이트에 상기 제1제어신호와 반대 위상의 제2제어신호가 공급되는 제6MOS트랜지스터(3)를 구비하여 구성된 것을 특징으로 하는 출력회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890010405A 1988-07-22 1989-07-22 출력회로 KR920005356B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63182943A JPH0626309B2 (ja) 1988-07-22 1988-07-22 出力回路
JP88-182943 1988-07-22

Publications (2)

Publication Number Publication Date
KR900002558A true KR900002558A (ko) 1990-02-28
KR920005356B1 KR920005356B1 (ko) 1992-07-02

Family

ID=16127080

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890010405A KR920005356B1 (ko) 1988-07-22 1989-07-22 출력회로

Country Status (5)

Country Link
US (1) US5113087A (ko)
EP (1) EP0351874B1 (ko)
JP (1) JPH0626309B2 (ko)
KR (1) KR920005356B1 (ko)
DE (1) DE68910413T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100863445B1 (ko) * 2002-07-08 2008-10-16 세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨 반도체 디바이스 및 반도체 디바이스 보호 방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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JPH0383053A (ja) * 1989-08-28 1991-04-09 Fuji Photo Film Co Ltd 露光機能付き感光材料包装ユニット
US5239324A (en) * 1991-02-04 1993-08-24 Fuji Photo Film Co., Ltd. Underwater housing and an underwater taking camera
JPH04355439A (ja) * 1991-05-31 1992-12-09 Fuji Photo Film Co Ltd 防水型レンズ付きフイルムユニット
JP2805408B2 (ja) * 1991-06-17 1998-09-30 富士写真フイルム株式会社 フィルム包装方法及び撮影機構付フィルム包装ユニット
JPH0489950U (ko) * 1991-10-31 1992-08-05
JP2856371B2 (ja) * 1992-01-09 1999-02-10 富士写真フイルム株式会社 レンズ付きフイルムユニット
JP2592220Y2 (ja) * 1992-04-01 1999-03-17 コニカ株式会社 レンズ付フィルムユニット
JPH05333474A (ja) * 1992-05-27 1993-12-17 Fuji Photo Film Co Ltd レンズ付きフイルムユニット及びその製造方法
US5399920A (en) * 1993-11-09 1995-03-21 Texas Instruments Incorporated CMOS driver which uses a higher voltage to compensate for threshold loss of the pull-up NFET
JP3386943B2 (ja) * 1995-10-30 2003-03-17 三菱電機株式会社 半導体装置
US5886563A (en) * 1996-03-25 1999-03-23 Nasila; Mikko J. Interlocked half-bridge circuit
FR2762727B1 (fr) * 1997-04-24 1999-07-16 Sgs Thomson Microelectronics Circuit integre avec etage de sortie haute tension
JP3629939B2 (ja) 1998-03-18 2005-03-16 セイコーエプソン株式会社 トランジスタ回路、表示パネル及び電子機器
US6081152A (en) * 1998-10-02 2000-06-27 Advanced Micro Devices, Inc. Output buffer with protective limit of voltage across terminals of devices within the output buffer
US6054888A (en) * 1998-10-02 2000-04-25 Advanced Micro Devices, Inc. Level shifter with protective limit of voltage across terminals of devices within the level shifter
JP4514753B2 (ja) * 2004-06-09 2010-07-28 ローム株式会社 レベルシフト回路及びこれを備えたスイッチングレギュレータ
JP2008258939A (ja) * 2007-04-05 2008-10-23 Matsushita Electric Ind Co Ltd 多チャンネル半導体集積回路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690626A (en) * 1979-12-24 1981-07-22 Mitsubishi Electric Corp Driving circuit with latch function
US4477735A (en) * 1980-12-20 1984-10-16 Itt Industries, Inc. Fast MOS driver stage for digital signals
JPS583183A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd 半導体装置の出力回路
EP0075915B1 (en) * 1981-09-30 1987-08-12 Kabushiki Kaisha Toshiba Logic circuit operable by a single power voltage
US4634893A (en) * 1983-01-10 1987-01-06 Ncr Corporation FET driver circuit with mask programmable transition rates
US4504779A (en) * 1983-03-11 1985-03-12 Hewlett-Packard Company Electrical load drive and control system
FR2552575B1 (fr) * 1983-09-27 1985-11-08 Thomson Csf Circuit de commande d'un panneau a plasma de type alternatif
JPS6184112A (ja) * 1984-10-02 1986-04-28 Fujitsu Ltd 論理ゲ−ト回路
FR2575013B1 (fr) * 1984-12-14 1987-01-16 Thomson Csf Porte logique a coincidence, et circuits logiques sequentiels mettant en oeuvre cette porte a coincidence
US4812683A (en) * 1987-05-19 1989-03-14 Gazelle Microcircuits, Inc. Logic circuit connecting input and output signal leads
US4855624A (en) * 1988-02-02 1989-08-08 National Semiconductor Corporation Low-power bipolar-CMOS interface circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100863445B1 (ko) * 2002-07-08 2008-10-16 세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨 반도체 디바이스 및 반도체 디바이스 보호 방법

Also Published As

Publication number Publication date
KR920005356B1 (ko) 1992-07-02
EP0351874B1 (en) 1993-11-03
DE68910413D1 (de) 1993-12-09
JPH0232615A (ja) 1990-02-02
EP0351874A2 (en) 1990-01-24
EP0351874A3 (en) 1990-05-30
US5113087A (en) 1992-05-12
DE68910413T2 (de) 1994-04-21
JPH0626309B2 (ja) 1994-04-06

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