KR910008863A - 반도체 집적회로 - Google Patents

반도체 집적회로 Download PDF

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Publication number
KR910008863A
KR910008863A KR1019900016319A KR900016319A KR910008863A KR 910008863 A KR910008863 A KR 910008863A KR 1019900016319 A KR1019900016319 A KR 1019900016319A KR 900016319 A KR900016319 A KR 900016319A KR 910008863 A KR910008863 A KR 910008863A
Authority
KR
South Korea
Prior art keywords
electrode
mos transistor
channel mos
power supply
potential power
Prior art date
Application number
KR1019900016319A
Other languages
English (en)
Other versions
KR940006699B1 (ko
Inventor
유끼오 미야자끼
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시기 모리야, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR910008863A publication Critical patent/KR910008863A/ko
Application granted granted Critical
Publication of KR940006699B1 publication Critical patent/KR940006699B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches

Abstract

내용 없음

Description

반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예인 반도체집적회로를 표시하는 도면
제2도는 제1도의 회로를 실현하는 반도체디바이스의 개략단면도
제3도는 고내압구조의 한예를 표시하는 반도체 디바이스의 주요부 단면도.

Claims (2)

  1. 제어신호를 입력하기 위한 입력단자와 한쪽 전극과 벌크가 고전위전원에 접속됨과 아울러 제어전극이 상기입력단자에 접속된 제1의 p채널 MOS트랜지스터와 상기 제1의 P채널 MOS 트랜지스터의 다른쪽 전극과 저전위전원과의 사이의 접속된 부하와 상기 제1의 P 채널 MOS 트랜지스터의 다른쪽 전극에 접속된 출력 단자와 한쪽 전극과 제어전극이 상기 출력 단자에 접속됨과 아울러 다른쪽 전극이 상기 저전위전원에 접속되어 벌크가 상기 고전위전원에 접속된 제2의 p채널 MOS 트랜지스터를 구비한 반도체접적회로.
  2. 제어신호를 입력하기 위한 입력단자와 한쪽 전극과 벌크가 저전위전원에 접속됨과 아울러 제어전극이 상기 입력단자에 접속된 제1의 채널 MOS트랜지스터와 상기 제1의 n채널 MOS 트랜지스터의 다른 쪽 전극과 고전위전원과의 사이에 접속된 부하와 상기 제1의 n 채널 MOS 트랜지스터의 다른쪽 전극과 접속된 출력 단자와 한쪽 전극과 제어전극이 상기 출력 단자에 접속됨과 아울러 다른쪽 전극이 상기 고전위전원에 접속되어 벌크가 상기 저전위전원에 접속된 제2의 n채널 MOS 트랜지스터와를 구비하는 반도체접적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900016319A 1989-10-15 1990-10-15 반도체 집적회로 KR940006699B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1275417A JPH0734476B2 (ja) 1989-10-23 1989-10-23 半導体集積回路
JP1-275417 1989-10-23

Publications (2)

Publication Number Publication Date
KR910008863A true KR910008863A (ko) 1991-05-31
KR940006699B1 KR940006699B1 (ko) 1994-07-25

Family

ID=17555216

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016319A KR940006699B1 (ko) 1989-10-15 1990-10-15 반도체 집적회로

Country Status (4)

Country Link
US (1) US5144518A (ko)
JP (1) JPH0734476B2 (ko)
KR (1) KR940006699B1 (ko)
DE (1) DE4031432A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160397A (ja) * 1991-12-10 1993-06-25 Mitsubishi Electric Corp 入力保護回路
DE69320221T2 (de) * 1992-03-16 1999-03-11 Philips Electronics Nv Integrierte Halbleiterschaltung mit Schutzvorrichtungen
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
JP3290772B2 (ja) * 1993-08-18 2002-06-10 株式会社東芝 表示装置
US5530612A (en) * 1994-03-28 1996-06-25 Intel Corporation Electrostatic discharge protection circuits using biased and terminated PNP transistor chains
US5552338A (en) * 1994-09-26 1996-09-03 Intel Corporation Method of using latchup current to blow a fuse in an integrated circuit
JP3485655B2 (ja) * 1994-12-14 2004-01-13 株式会社ルネサステクノロジ 複合型ｍｏｓｆｅｔ
US5635418A (en) * 1995-03-23 1997-06-03 Micron Technology, Inc. Method of making a resistor
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
DE19529254A1 (de) * 1995-08-09 1997-02-13 Telefunken Microelectron Mikromechanischer Schalter
US5744839A (en) * 1996-06-11 1998-04-28 Micron Technology, Inc. ESD protection using selective siliciding techniques
US5882967A (en) * 1997-05-07 1999-03-16 International Business Machines Corporation Process for buried diode formation in CMOS
KR19990074584A (ko) * 1998-03-12 1999-10-05 김영환 정전방전 보호 회로를 갖는 반도체 소자
US6285062B1 (en) * 1999-05-12 2001-09-04 Micron Technology, Inc. Adjustable high-trigger-voltage electrostatic discharge protection device
JP4402465B2 (ja) * 2004-01-05 2010-01-20 株式会社リコー 電源回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
JPS51101478A (ko) * 1975-03-04 1976-09-07 Suwa Seikosha Kk
JPS6066049U (ja) * 1983-10-12 1985-05-10 日本電気株式会社 Ｃ−ｍｏｓ型電界効果トランジスタ
JPH0748652B2 (ja) * 1987-07-23 1995-05-24 三菱電機株式会社 半導体回路装置の入力保護装置
US4789917A (en) * 1987-08-31 1988-12-06 National Semiconductor Corp. MOS I/O protection using switched body circuit design
JPH0695545B2 (ja) * 1988-01-07 1994-11-24 株式会社東芝 半導体集積回路

Also Published As

Publication number Publication date
JPH03136376A (ja) 1991-06-11
DE4031432A1 (de) 1991-04-25
US5144518A (en) 1992-09-01
KR940006699B1 (ko) 1994-07-25
JPH0734476B2 (ja) 1995-04-12
DE4031432C2 (ko) 1992-12-17

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