KR880004484A - 메모리 셀회로 - Google Patents
메모리 셀회로 Download PDFInfo
- Publication number
- KR880004484A KR880004484A KR870010574A KR870010574A KR880004484A KR 880004484 A KR880004484 A KR 880004484A KR 870010574 A KR870010574 A KR 870010574A KR 870010574 A KR870010574 A KR 870010574A KR 880004484 A KR880004484 A KR 880004484A
- Authority
- KR
- South Korea
- Prior art keywords
- memory cell
- pair
- cell circuit
- gate
- select line
- Prior art date
Links
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 실시예에 설명하는 메모리셀회로의 구성을 나타내는 회로도.
제2도는 본 발명의 메모리셀회로의 다른 예의 구성을 나타내는 회로도.
Claims (1)
- 상호 게이트 드레인 접속된 트랜지스터 쌍과 판독 선택선에 게이트가 접속되어 상기 한쌍의 게이트 드레인 접속점과 한쌍의 비트선간에 각각 배설되는 제1및 제2의 억세스 트랜지스터를 가지는 메모리 셀회로에 있어서, 판독 선택선에 게이트가 접속되며, 상기 제1및 제2의 억세스 트랜지스터와 상기 트랜지스터쌍의 대응하는 게이트간에 각각 제3및 제4의 억세스 트랜지스터를 배설한 것을 특징으로 하는메모리셀회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP227447 | 1986-09-26 | ||
JP61227447A JPS6381694A (ja) | 1986-09-26 | 1986-09-26 | メモリセル回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR880004484A true KR880004484A (ko) | 1988-06-04 |
Family
ID=16861013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR870010574A KR880004484A (ko) | 1986-09-26 | 1987-09-24 | 메모리 셀회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4839863A (ko) |
EP (1) | EP0262850B1 (ko) |
JP (1) | JPS6381694A (ko) |
KR (1) | KR880004484A (ko) |
DE (1) | DE3775508D1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5020028A (en) * | 1989-08-07 | 1991-05-28 | Standard Microsystems Corporation | Four transistor static RAM cell |
US5814895A (en) * | 1995-12-22 | 1998-09-29 | Sony Corporation | Static random access memory having transistor elements formed on side walls of a trench in a semiconductor substrate |
US7088606B2 (en) * | 2004-03-10 | 2006-08-08 | Altera Corporation | Dynamic RAM storage techniques |
US7506643B2 (en) | 2006-06-30 | 2009-03-24 | Larry Holmberg | Crossbow device mount |
JP2008153479A (ja) * | 2006-12-19 | 2008-07-03 | Rohm Co Ltd | 強誘電体電界効果トランジスタを備える半導体装置及びこれを用いた半導体集積回路装置 |
US8634230B2 (en) * | 2011-01-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
JPS58147886A (ja) * | 1982-02-26 | 1983-09-02 | Mitsubishi Electric Corp | GaAs半導体記憶回路 |
-
1986
- 1986-09-26 JP JP61227447A patent/JPS6381694A/ja active Pending
-
1987
- 1987-09-21 EP EP87308341A patent/EP0262850B1/en not_active Expired - Lifetime
- 1987-09-21 DE DE8787308341T patent/DE3775508D1/de not_active Expired - Lifetime
- 1987-09-24 KR KR870010574A patent/KR880004484A/ko not_active Application Discontinuation
- 1987-09-28 US US07/101,441 patent/US4839863A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3775508D1 (de) | 1992-02-06 |
EP0262850A3 (en) | 1989-05-17 |
US4839863A (en) | 1989-06-13 |
EP0262850A2 (en) | 1988-04-06 |
JPS6381694A (ja) | 1988-04-12 |
EP0262850B1 (en) | 1991-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |