KR920010648A - 불휘발성 반도체 메모리 - Google Patents
불휘발성 반도체 메모리 Download PDFInfo
- Publication number
- KR920010648A KR920010648A KR1019910020946A KR910020946A KR920010648A KR 920010648 A KR920010648 A KR 920010648A KR 1019910020946 A KR1019910020946 A KR 1019910020946A KR 910020946 A KR910020946 A KR 910020946A KR 920010648 A KR920010648 A KR 920010648A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- semiconductor memory
- nonvolatile semiconductor
- semiconductor
- drain region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 5
- 239000012535 impurity Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 의한 EPROM의 구성을 나타낸 개략선도,
제2도는 본 발명의 일실시예에 의한 EPROM에 있어서 사용되는 소오스 영역 및 드레인 영역이 비대칭적인 구조를 갖는 메모리 트랜지스터를 나타낸 표시도.
Claims (1)
- 메모리 셀을 구성하는 트랜지스터가 소오스영역 또는 드레인영역을 공통으로 하여 X자 형으로 배치된 구조를 갖고, 상기 소오스영역 및 상기 드레인영역을 구성하는 한쌍의 반도체영역의 한쪽이 고불순물 농도영역과 저불순물 농도영역으로 이루어지고, 상기 소오스영역 및 상기 드레인영역을 구성하는 한쌍의 반도체영역의 다른쪽이 고불순물 농도영역으로 이루어지고, 데이타 기입시에는 상기 한쪽의 반도체영역이 소오스영역으로 되고, 데이타 독출시에는 상기 한쪽의 반도체영역이 드레인영역으로 되는 것을 특징으로 하는 불휘발성 반도체 메모리.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2338491A JPH04206965A (ja) | 1990-11-30 | 1990-11-30 | 不揮発性半導体メモリ |
JP90-338491 | 1990-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920010648A true KR920010648A (ko) | 1992-06-27 |
KR100262393B1 KR100262393B1 (ko) | 2000-08-01 |
Family
ID=18318659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910020946A KR100262393B1 (ko) | 1990-11-30 | 1991-11-22 | 불휘발성반도체메모리 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5303184A (ko) |
JP (1) | JPH04206965A (ko) |
KR (1) | KR100262393B1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5557569A (en) * | 1993-10-12 | 1996-09-17 | Texas Instruments Incorporated | Low voltage flash EEPROM C-cell using fowler-nordheim tunneling |
EP0676816B1 (en) * | 1994-03-28 | 2001-10-04 | STMicroelectronics S.r.l. | Flash - EEPROM memory array and biasing method thereof |
KR100277888B1 (ko) * | 1997-12-31 | 2001-02-01 | 김영환 | 플래쉬메모리및그의제조방법 |
US6327178B1 (en) * | 2000-07-18 | 2001-12-04 | Micron Technology, Inc. | Programmable circuit and its method of operation |
JP3831615B2 (ja) | 2001-01-16 | 2006-10-11 | 三洋電機株式会社 | 半導体装置とその製造方法 |
US6903977B2 (en) * | 2001-09-25 | 2005-06-07 | Sony Corporation | Nonvolatile semiconductor memory device and method of producing the same |
JP2004095048A (ja) * | 2002-08-30 | 2004-03-25 | Toshiba Corp | 不揮発性半導体メモリ |
US6954376B2 (en) * | 2003-12-15 | 2005-10-11 | Solid State System Co., Ltd. | Non-volatile semiconductor memory array structure and operations |
KR100734317B1 (ko) * | 2006-05-16 | 2007-07-02 | 삼성전자주식회사 | 2-비트 동작을 위한 비휘발성 메모리 소자 및 그 제조 방법 |
US7773412B2 (en) * | 2006-05-22 | 2010-08-10 | Micron Technology, Inc. | Method and apparatus for providing a non-volatile memory with reduced cell capacitive coupling |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4281397A (en) * | 1979-10-29 | 1981-07-28 | Texas Instruments Incorporated | Virtual ground MOS EPROM or ROM matrix |
US4636979A (en) * | 1984-11-02 | 1987-01-13 | Motorola, Inc. | Orientation of reference cells in a memory |
DE3586718T2 (de) * | 1984-12-26 | 1993-03-11 | Sgs Thomson Microelectronics | Festwertspeicher mit interdigitalen bitzeilen. |
US4901285A (en) * | 1985-12-24 | 1990-02-13 | Raytheon Company | High density read-only memory |
JP2555027B2 (ja) * | 1986-05-26 | 1996-11-20 | 株式会社日立製作所 | 半導体記憶装置 |
US4788663A (en) * | 1987-04-24 | 1988-11-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with a lightly-doped drain structure |
US4839705A (en) * | 1987-12-16 | 1989-06-13 | Texas Instruments Incorporated | X-cell EEPROM array |
JP2513795B2 (ja) * | 1988-07-22 | 1996-07-03 | 沖電気工業株式会社 | Mos型半導体記憶装置 |
JP2580752B2 (ja) * | 1988-12-27 | 1997-02-12 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
JP2772020B2 (ja) * | 1989-02-22 | 1998-07-02 | 株式会社東芝 | Mos型半導体装置 |
-
1990
- 1990-11-30 JP JP2338491A patent/JPH04206965A/ja active Pending
-
1991
- 1991-11-22 KR KR1019910020946A patent/KR100262393B1/ko not_active IP Right Cessation
- 1991-11-27 US US07/799,195 patent/US5303184A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04206965A (ja) | 1992-07-28 |
US5303184A (en) | 1994-04-12 |
KR100262393B1 (ko) | 2000-08-01 |
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