KR880011809A - 불휘발성 반도체기억장치 - Google Patents

불휘발성 반도체기억장치 Download PDF

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Publication number
KR880011809A
KR880011809A KR1019880003525A KR880003525A KR880011809A KR 880011809 A KR880011809 A KR 880011809A KR 1019880003525 A KR1019880003525 A KR 1019880003525A KR 880003525 A KR880003525 A KR 880003525A KR 880011809 A KR880011809 A KR 880011809A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
nonvolatile semiconductor
transistor
generating transistor
high potential
Prior art date
Application number
KR1019880003525A
Other languages
English (en)
Other versions
KR910009351B1 (ko
Inventor
스미오 다나카
시게루 아츠미
노부아키 오츠카
겐이치 이마미야
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR880011809A publication Critical patent/KR880011809A/ko
Application granted granted Critical
Publication of KR910009351B1 publication Critical patent/KR910009351B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Abstract

내용없음

Description

불휘발성 반도체기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 1실시예를 도시해 놓은 회로도
제2도는 본 발명에 따른 다른 실시예를 도시해 놓은 회로도

Claims (1)

  1. 고전위발생용 트랜지스터와 독출전위발생용 트랜지스터가 병렬로 접속되고, 그 공통접점으로 고전위와 독출용 전위가 선택적으로 발생되도록 된 회로에 있어서, 독출전위발생용 트랜지스터가 종속접속된 2개의 디플리이션형 트랜지스터(21, 22)로 이루어지고, 그 공통접점에 다른 쪽의 접점에 고전위단자가 접속됨과 더불어 그 게이트에는 기록시에 고전위가 인가되게 되는 트랜지스터가 접속된 전환회로가 갖추어져서 구성된 것을 특징으로 하는 불휘발성 반도체기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003525A 1987-03-31 1988-03-30 불휘발성 반도체기억장치 KR910009351B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP87-78522 1987-03-31
JP62-78522 1987-03-31
JP7852287A JPH0632230B2 (ja) 1987-03-31 1987-03-31 半導体不揮発性記憶装置

Publications (2)

Publication Number Publication Date
KR880011809A true KR880011809A (ko) 1988-10-31
KR910009351B1 KR910009351B1 (ko) 1991-11-12

Family

ID=13664260

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880003525A KR910009351B1 (ko) 1987-03-31 1988-03-30 불휘발성 반도체기억장치

Country Status (3)

Country Link
US (1) US4893275A (ko)
JP (1) JPH0632230B2 (ko)
KR (1) KR910009351B1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1225607B (it) * 1988-07-06 1990-11-22 Sgs Thomson Microelectronics Circuito logico cmos per alta tensione
JPH0793019B2 (ja) * 1988-09-02 1995-10-09 株式会社東芝 半導体集積回路
US5039882A (en) * 1988-10-15 1991-08-13 Sony Corporation Address decoder circuit for non-volatile memory
JP2569777B2 (ja) * 1988-12-16 1997-01-08 日本電気株式会社 入力信号切り換え回路
CH681928A5 (ko) * 1989-04-26 1993-06-15 Seiko Epson Corp
KR920000962B1 (ko) * 1989-05-26 1992-01-31 삼성전자 주식회사 반도체 메모리 장치의 데이터 출력단 전압레벨 조절회로
US4943945A (en) * 1989-06-13 1990-07-24 International Business Machines Corporation Reference voltage generator for precharging bit lines of a transistor memory
US5265052A (en) * 1989-07-20 1993-11-23 Texas Instruments Incorporated Wordline driver circuit for EEPROM memory cell
JPH07111826B2 (ja) * 1990-09-12 1995-11-29 株式会社東芝 半導体記憶装置
JP2672740B2 (ja) * 1991-10-07 1997-11-05 三菱電機株式会社 マイクロコンピュータ
JPH05151789A (ja) * 1991-11-29 1993-06-18 Nec Corp 電気的に書込・一括消去可能な不揮発性半導体記憶装置
WO1993012525A1 (en) * 1991-12-09 1993-06-24 Fujitsu Limited Flash memory improved in erasing characteristic, and circuit therefor
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
US5969207A (en) * 1994-02-02 1999-10-19 Kozyuk; Oleg V. Method for changing the qualitative and quantitative composition of a mixture of liquid hydrocarbons based on the effects of cavitation
GB9423051D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage level converter
EP0782268B1 (en) * 1995-12-29 2002-04-24 STMicroelectronics S.r.l. Supply voltages switch circuit
JP3180662B2 (ja) * 1996-03-29 2001-06-25 日本電気株式会社 電源切り替え回路
DE69630363D1 (de) * 1996-05-24 2003-11-20 St Microelectronics Srl Zeilendekodierer für Speicher
US5937906A (en) * 1997-05-06 1999-08-17 Kozyuk; Oleg V. Method and apparatus for conducting sonochemical reactions and processes using hydrodynamic cavitation
US5931771A (en) * 1997-12-24 1999-08-03 Kozyuk; Oleg V. Method and apparatus for producing ultra-thin emulsions and dispersions
US5971601A (en) * 1998-02-06 1999-10-26 Kozyuk; Oleg Vyacheslavovich Method and apparatus of producing liquid disperse systems
JP4199765B2 (ja) * 2005-12-02 2008-12-17 マイクロン テクノロジー，インコーポレイテッド 高電圧スイッチング回路
JP5191766B2 (ja) 2008-03-24 2013-05-08 ルネサスエレクトロニクス株式会社 デコーダ回路
KR102072767B1 (ko) 2013-11-21 2020-02-03 삼성전자주식회사 고전압 스위치 및 그것을 포함하는 불휘발성 메모리 장치
KR101910439B1 (ko) * 2014-03-03 2018-12-05 인텔 코포레이션 고 전압 허용 워드-라인 구동기

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55115729A (en) * 1979-02-28 1980-09-05 Toshiba Corp Mos transistor circuit
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
US4565932A (en) * 1983-12-29 1986-01-21 Motorola, Inc. High voltage circuit for use in programming memory circuits (EEPROMs)
JPS6252797A (ja) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0632230B2 (ja) 1994-04-27
KR910009351B1 (ko) 1991-11-12
US4893275A (en) 1990-01-09
JPS63244500A (ja) 1988-10-11

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