KR900019041A - 반도체 메모리 - Google Patents
반도체 메모리 Download PDFInfo
- Publication number
- KR900019041A KR900019041A KR1019900007510A KR900007510A KR900019041A KR 900019041 A KR900019041 A KR 900019041A KR 1019900007510 A KR1019900007510 A KR 1019900007510A KR 900007510 A KR900007510 A KR 900007510A KR 900019041 A KR900019041 A KR 900019041A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor memory
- inverter
- bit line
- reference potential
- bit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 요부를 도시하는 회로도.
Claims (1)
- 메모리 셀이 비트선과 기준 전위 단자와의 사이에 접속된 MOS트랜지스터로 형성되는 반도체 메모리에 있어서, 센스 앰프가 입출력간을 스위칭 수단에 의해 접속된 인버터로 형성되며, 상기한 인버터의 입력 단자와 상기 비트선 사이에 비트선의 전위의 상기 기준전위에 근접하는 방향의 변동만을 인버터로 전달하는 변위전달 수단이 설치되어 형성되는 것을 특징으로 하는 반도체 메모리.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-134120 | 1989-05-25 | ||
| JP13412089A JP2830066B2 (ja) | 1989-05-25 | 1989-05-25 | 半導体メモリ |
| JP134120 | 1989-05-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900019041A true KR900019041A (ko) | 1990-12-22 |
| KR0155163B1 KR0155163B1 (ko) | 1998-12-01 |
Family
ID=15120932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900007510A KR0155163B1 (ko) | 1989-05-25 | 1990-05-24 | 반도체 메모리 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5161123A (ko) |
| EP (1) | EP0399820B1 (ko) |
| JP (1) | JP2830066B2 (ko) |
| KR (1) | KR0155163B1 (ko) |
| DE (1) | DE69016701T2 (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0478097A (ja) * | 1990-07-13 | 1992-03-12 | Sony Corp | メモリ装置 |
| KR960010736B1 (ko) * | 1991-02-19 | 1996-08-07 | 미쓰비시뎅끼 가부시끼가이샤 | 마스크 rom 및 그 제조방법 |
| FR2682505B1 (fr) * | 1991-10-11 | 1996-09-27 | Sgs Thomson Microelectronics | Dispositif pour detecter le contenu de cellules au sein d'une memoire, notamment une memoire eprom, procede mis en óoeuvre dans ce dispositif, et memoire munie de ce dispositif. |
| JPH06139784A (ja) * | 1992-10-21 | 1994-05-20 | Takayama:Kk | メモリデバイス |
| JP2894115B2 (ja) * | 1992-11-10 | 1999-05-24 | 松下電器産業株式会社 | カラム選択回路 |
| EP1505605A1 (en) | 2003-08-06 | 2005-02-09 | STMicroelectronics S.r.l. | Improved sensing circuit for a semiconductor memory including bit line precharging and discharging functions |
| US7203096B2 (en) * | 2005-06-30 | 2007-04-10 | Infineon Technologies Flash Gmbh & Co. Kg | Method and apparatus for sensing a state of a memory cell |
| JP2007141399A (ja) * | 2005-11-21 | 2007-06-07 | Renesas Technology Corp | 半導体装置 |
| CN106486143B (zh) * | 2015-08-26 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | 灵敏放大器 |
| KR102511901B1 (ko) * | 2016-04-11 | 2023-03-20 | 에스케이하이닉스 주식회사 | 넓은 동작 영역을 갖는 불휘발성 메모리 소자 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5374328A (en) * | 1976-12-15 | 1978-07-01 | Toshiba Corp | Mos-type read only memory |
| JPS603709B2 (ja) * | 1980-02-05 | 1985-01-30 | 株式会社東芝 | 半導体記憶装置 |
| US4461965A (en) * | 1980-08-18 | 1984-07-24 | National Semiconductor Corporation | High speed CMOS sense amplifier |
| EP0050005B1 (en) * | 1980-10-15 | 1988-05-18 | Kabushiki Kaisha Toshiba | Semiconductor memory with improved data programming time |
| JPS6325894A (ja) * | 1986-07-18 | 1988-02-03 | Hitachi Ltd | 半導体記憶装置 |
-
1989
- 1989-05-25 JP JP13412089A patent/JP2830066B2/ja not_active Expired - Fee Related
-
1990
- 1990-05-24 US US07/527,821 patent/US5161123A/en not_active Expired - Fee Related
- 1990-05-24 EP EP90305649A patent/EP0399820B1/en not_active Expired - Lifetime
- 1990-05-24 KR KR1019900007510A patent/KR0155163B1/ko not_active IP Right Cessation
- 1990-05-24 DE DE69016701T patent/DE69016701T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0399820A3 (en) | 1992-04-08 |
| US5161123A (en) | 1992-11-03 |
| EP0399820A2 (en) | 1990-11-28 |
| JPH02310895A (ja) | 1990-12-26 |
| KR0155163B1 (ko) | 1998-12-01 |
| DE69016701D1 (de) | 1995-03-23 |
| DE69016701T2 (de) | 1995-06-08 |
| JP2830066B2 (ja) | 1998-12-02 |
| EP0399820B1 (en) | 1995-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030620 Year of fee payment: 6 |
|
| LAPS | Lapse due to unpaid annual fee |