KR910016077A - 반도체집적회로 - Google Patents

반도체집적회로 Download PDF

Info

Publication number
KR910016077A
KR910016077A KR1019910001944A KR910001944A KR910016077A KR 910016077 A KR910016077 A KR 910016077A KR 1019910001944 A KR1019910001944 A KR 1019910001944A KR 910001944 A KR910001944 A KR 910001944A KR 910016077 A KR910016077 A KR 910016077A
Authority
KR
South Korea
Prior art keywords
integrated circuit
semiconductor integrated
bipolar transistor
logic gate
cmos
Prior art date
Application number
KR1019910001944A
Other languages
English (en)
Inventor
미치노리 나카무라
야스히로 스기모토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910016077A publication Critical patent/KR910016077A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H03K19/0136—Modifications for accelerating switching in bipolar transistor circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

반도체집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 구성 회로도.

Claims (1)

  1. 출력단(OUT)이 제1극성의 바이폴라 트랜지스터의 제2극성의 바이폴라 트랜지스터의 상보적인 구성으로 된 Bi - CMOS 논리게이트회로와, CMOS 인버터회로(1)를 구비하고, 상기 Bi - CMOS 논리게이트회로에서의 입력노드와 출력노드에 상기 CMOS 인버터회로(1)의 입출력단사이가 병렬로 접속되어 있는 것을 특징으로 하는 반도체집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910001944A 1990-02-07 1991-02-05 반도체집적회로 KR910016077A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-027941 1990-02-07
JP2027941A JPH03231455A (ja) 1990-02-07 1990-02-07 半導体集積回路

Publications (1)

Publication Number Publication Date
KR910016077A true KR910016077A (ko) 1991-09-30

Family

ID=12234923

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910001944A KR910016077A (ko) 1990-02-07 1991-02-05 반도체집적회로

Country Status (4)

Country Link
US (1) US5146118A (ko)
EP (1) EP0441317A1 (ko)
JP (1) JPH03231455A (ko)
KR (1) KR910016077A (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198755A (ja) * 1991-08-29 1993-08-06 Mitsubishi Electric Corp 半導体論理回路
US5604417A (en) * 1991-12-19 1997-02-18 Hitachi, Ltd. Semiconductor integrated circuit device
US5252577A (en) * 1992-03-06 1993-10-12 Gillette Canada, Inc. Methods of desensitizing teeth
US5404056A (en) * 1992-04-28 1995-04-04 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device with independently operable output buffers
US5276362A (en) * 1992-05-06 1994-01-04 Motorola, Inc. BiCMOS TTL to CMOS level translator
US5362997A (en) * 1992-12-16 1994-11-08 Aspen Semiconductor Corporation BiCMOS output driver
US5432462A (en) * 1993-04-30 1995-07-11 Motorola, Inc. Input buffer circuit having sleep mode and bus hold function
US5398000A (en) * 1994-03-30 1995-03-14 Intel Corporation Simple and high speed BICMOS tristate buffer circuit
US5660817A (en) 1994-11-09 1997-08-26 Gillette Canada, Inc. Desensitizing teeth with degradable particles
US5739700A (en) * 1996-09-09 1998-04-14 International Business Machines Corporation Method and apparatus with dual circuitry for shifting the level of a signal
US5926055A (en) * 1996-12-20 1999-07-20 Cirrus Logic, Inc. Five volt output connection for a chip manufactured in a three volt process
CN1611004A (zh) * 2001-12-28 2005-04-27 皇家飞利浦电子股份有限公司 再生放大器电路
US7888962B1 (en) 2004-07-07 2011-02-15 Cypress Semiconductor Corporation Impedance matching circuit
US8036846B1 (en) 2005-10-20 2011-10-11 Cypress Semiconductor Corporation Variable impedance sense architecture and method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103188A (en) * 1977-08-22 1978-07-25 Rca Corporation Complementary-symmetry amplifier
DE3006176C2 (de) * 1980-02-19 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Einrichtung zur Signalpegelverschiebung
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
JPS5986923A (ja) * 1982-11-10 1984-05-19 Toshiba Corp 半導体装置
JP2564787B2 (ja) * 1983-12-23 1996-12-18 富士通株式会社 ゲートアレー大規模集積回路装置及びその製造方法
JPS625722A (ja) * 1985-07-01 1987-01-12 Toshiba Corp インバ−タ回路
JPH0720060B2 (ja) * 1985-08-14 1995-03-06 株式会社東芝 出力回路装置
JPS6382122A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 論理回路
JPS63202126A (ja) * 1987-02-17 1988-08-22 Toshiba Corp 論理回路
JPS63299513A (ja) * 1987-05-29 1988-12-07 Toshiba Corp 出力回路
US4810903A (en) * 1987-12-14 1989-03-07 Motorola, Inc. BICMOS driver circuit including submicron on chip voltage source
JP2569113B2 (ja) * 1988-03-07 1997-01-08 株式会社日立製作所 半導体集積回路装置
KR920009870B1 (ko) * 1988-04-21 1992-11-02 삼성반도체통신 주식회사 Bi-CMOS 인버터 회로
EP0387463A1 (en) * 1989-03-14 1990-09-19 International Business Machines Corporation Improvements to complementary emitter follower drivers

Also Published As

Publication number Publication date
US5146118A (en) 1992-09-08
JPH03231455A (ja) 1991-10-15
EP0441317A1 (en) 1991-08-14

Similar Documents

Publication Publication Date Title
KR900013380A (ko) 전압 제어회로
KR890009068A (ko) 레벨변환회로
KR930003556A (ko) 점진적 턴-온 특성의 cmos 구동기
KR940010530A (ko) 에미터 결합 로직(ECL)-바이폴라 상보형 금속 산화물 반도체(BiCMOS)/상보형금속 산화물 반도체(CMOS) 트랜슬레이터
KR880002179A (ko) Mos 형 반도체회로
KR910021122A (ko) 믹서회로
KR890013862A (ko) 전압레벨 변환회로
KR910016077A (ko) 반도체집적회로
KR880012014A (ko) Bimos 논리회로
KR840008075A (ko) 스위칭 제어신호 발생용 반도체 집적회로장치
KR870009528A (ko) 버퍼회로
KR860000719A (ko) 상보형(相補型)Bi-MIS 게이트회로
KR880012009A (ko) BiMOS 논리회로
KR890011209A (ko) 듀일 슬로프 파형 발생회로
KR930005365A (ko) 차동, 고속, 저전력의 에미터 정합논리 대상보형 금속산화막반도체(ecl-cmos)변환기
KR890016740A (ko) Bi-CMOS인버터 회로
KR930001572A (ko) 노이즈 감소 회로에 사용되는 액티브 필터용 전압-전류 변환 회로
KR910020896A (ko) 반도체집적회로
KR920015734A (ko) 입력 버퍼 재생 래치
KR930006875A (ko) 집적회로
KR880005743A (ko) 비교기
KR900015465A (ko) Cmos 전압레벨 시프팅 및 함수회로
KR910010860A (ko) 출력회로
KR910015123A (ko) Ecl논리회로
KR910017424A (ko) 반도체 집적회로 장치의 메모리셀 회로

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
SUBM Submission of document of abandonment before or after decision of registration