KR880002179A - Mos 형 반도체회로 - Google Patents
Mos 형 반도체회로 Download PDFInfo
- Publication number
- KR880002179A KR880002179A KR1019870007757A KR870007757A KR880002179A KR 880002179 A KR880002179 A KR 880002179A KR 1019870007757 A KR1019870007757 A KR 1019870007757A KR 870007757 A KR870007757 A KR 870007757A KR 880002179 A KR880002179 A KR 880002179A
- Authority
- KR
- South Korea
- Prior art keywords
- mos transistor
- semiconductor circuit
- mos
- mos semiconductor
- drain
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 제1실시예에 따른 MOS형 반도체회로의 회로도
제6도는 제5도에 도시한 MOS형 반도체회로에 사용된 다결정실리콘저항의 쉬트저항(sheet resistance)과 온도와의 관계를 나타내는 도면
제7도는 제5도에 도시한 MOS형 반도체회로에 사용된 링발진기의 발진주파수와 온도와의 관계를 나타내는 도면
Claims (1)
- 제1, 제2의 전원단자(VDD, VSS)와 캐스캐이드로 접속된 논리회로(I1~I5, 10)와, 상기 제1의 전원단자(VDD)와 논리회로(I1~I5, 10)의 출력노드 사이에 접속된 최소한 하나이상의 제1MOS트랜지스터(P11~P15)를 갖추고 있는 제1의 MOS트랜지스터회로, 상기 제1MOS트랜지스터(P11~P15)와 같은 도전형으로서 그 게이트가 상기 제1MOS트랜지스터(P11~P15)와 공통접속되고, 그 게이트 드레인 사이가 단락되어 있는 제2MOS트랜지스터(P16, P17) 및 상기 제2MOS트랜지스터(P16)의 소오스 드레인 사이의 통로로 소정전류가 흐르도록 하기 위해 제2MOS트랜지스터(P16)의 드레인에 접속되어 있는 전류제어회로(R1, R2, G1, D1, D2, P18, N18, G2, 15)로 구성된 것을 특징으로 하는 MOS형 반도체회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP168539 | 1986-07-17 | ||
JP61-168539 | 1986-07-17 | ||
JP61168539A JPS6324712A (ja) | 1986-07-17 | 1986-07-17 | Mos型半導体回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880002179A true KR880002179A (ko) | 1988-04-29 |
KR950008439B1 KR950008439B1 (ko) | 1995-07-31 |
Family
ID=15869890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870007757A KR950008439B1 (ko) | 1986-07-17 | 1987-07-16 | Mos형 반도체회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4853654A (ko) |
EP (1) | EP0254212B1 (ko) |
JP (1) | JPS6324712A (ko) |
KR (1) | KR950008439B1 (ko) |
DE (1) | DE3782367T2 (ko) |
Families Citing this family (63)
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JP3780030B2 (ja) * | 1995-06-12 | 2006-05-31 | 株式会社ルネサステクノロジ | 発振回路およびdram |
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JPS5022593B1 (ko) * | 1970-06-15 | 1975-07-31 | ||
JPS5686509A (en) * | 1979-12-17 | 1981-07-14 | Seiko Epson Corp | Voltage controlled oscillator |
JPS56110267A (en) * | 1980-02-06 | 1981-09-01 | Nec Corp | Semiconductor device |
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JPS60158717A (ja) * | 1984-01-27 | 1985-08-20 | Seiko Instr & Electronics Ltd | 温度補償付発振回路 |
JPS60251722A (ja) * | 1984-05-29 | 1985-12-12 | Sony Corp | D/a変換回路 |
JPS62214716A (ja) * | 1986-03-14 | 1987-09-21 | Matsushita Electric Ind Co Ltd | Cmos可変遅延線 |
-
1986
- 1986-07-17 JP JP61168539A patent/JPS6324712A/ja active Pending
-
1987
- 1987-07-13 US US07/072,443 patent/US4853654A/en not_active Expired - Lifetime
- 1987-07-16 EP EP87110298A patent/EP0254212B1/en not_active Expired - Lifetime
- 1987-07-16 DE DE8787110298T patent/DE3782367T2/de not_active Expired - Lifetime
- 1987-07-16 KR KR1019870007757A patent/KR950008439B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0254212B1 (en) | 1992-10-28 |
JPS6324712A (ja) | 1988-02-02 |
EP0254212A3 (en) | 1988-04-06 |
US4853654A (en) | 1989-08-01 |
EP0254212A2 (en) | 1988-01-27 |
DE3782367T2 (de) | 1993-05-06 |
DE3782367D1 (de) | 1992-12-03 |
KR950008439B1 (ko) | 1995-07-31 |
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