KR880002179A - Mos 형 반도체회로 - Google Patents

Mos 형 반도체회로 Download PDF

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Publication number
KR880002179A
KR880002179A KR1019870007757A KR870007757A KR880002179A KR 880002179 A KR880002179 A KR 880002179A KR 1019870007757 A KR1019870007757 A KR 1019870007757A KR 870007757 A KR870007757 A KR 870007757A KR 880002179 A KR880002179 A KR 880002179A
Authority
KR
South Korea
Prior art keywords
mos transistor
semiconductor circuit
mos
mos semiconductor
drain
Prior art date
Application number
KR1019870007757A
Other languages
English (en)
Other versions
KR950008439B1 (ko
Inventor
다카야스 사쿠라이
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR880002179A publication Critical patent/KR880002179A/ko
Application granted granted Critical
Publication of KR950008439B1 publication Critical patent/KR950008439B1/ko

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354Astable circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/011Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03Astable circuits
    • H03K3/0315Ring oscillators

Abstract

내용 없음

Description

MOS 형 반도체회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 제1실시예에 따른 MOS형 반도체회로의 회로도
제6도는 제5도에 도시한 MOS형 반도체회로에 사용된 다결정실리콘저항의 쉬트저항(sheet resistance)과 온도와의 관계를 나타내는 도면
제7도는 제5도에 도시한 MOS형 반도체회로에 사용된 링발진기의 발진주파수와 온도와의 관계를 나타내는 도면

Claims (1)

  1. 제1, 제2의 전원단자(VDD, VSS)와 캐스캐이드로 접속된 논리회로(I1~I5, 10)와, 상기 제1의 전원단자(VDD)와 논리회로(I1~I5, 10)의 출력노드 사이에 접속된 최소한 하나이상의 제1MOS트랜지스터(P11~P15)를 갖추고 있는 제1의 MOS트랜지스터회로, 상기 제1MOS트랜지스터(P11~P15)와 같은 도전형으로서 그 게이트가 상기 제1MOS트랜지스터(P11~P15)와 공통접속되고, 그 게이트 드레인 사이가 단락되어 있는 제2MOS트랜지스터(P16, P17) 및 상기 제2MOS트랜지스터(P16)의 소오스 드레인 사이의 통로로 소정전류가 흐르도록 하기 위해 제2MOS트랜지스터(P16)의 드레인에 접속되어 있는 전류제어회로(R1, R2, G1, D1, D2, P18, N18, G2, 15)로 구성된 것을 특징으로 하는 MOS형 반도체회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870007757A 1986-07-17 1987-07-16 Mos형 반도체회로 KR950008439B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP168539 1986-07-17
JP61-168539 1986-07-17
JP61168539A JPS6324712A (ja) 1986-07-17 1986-07-17 Mos型半導体回路

Publications (2)

Publication Number Publication Date
KR880002179A true KR880002179A (ko) 1988-04-29
KR950008439B1 KR950008439B1 (ko) 1995-07-31

Family

ID=15869890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870007757A KR950008439B1 (ko) 1986-07-17 1987-07-16 Mos형 반도체회로

Country Status (5)

Country Link
US (1) US4853654A (ko)
EP (1) EP0254212B1 (ko)
JP (1) JPS6324712A (ko)
KR (1) KR950008439B1 (ko)
DE (1) DE3782367T2 (ko)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4899071A (en) * 1988-08-02 1990-02-06 Standard Microsystems Corporation Active delay line circuit
JP2928263B2 (ja) * 1989-03-20 1999-08-03 株式会社日立製作所 半導体装置
US5136182A (en) * 1990-08-31 1992-08-04 Advanced Micro Devices, Inc. Controlled voltage or current source, and logic gate with same
US5081428A (en) * 1991-03-29 1992-01-14 Codex Corp. Voltage controlled oscillator having 50% duty cycle clock
JPH06169237A (ja) * 1991-09-13 1994-06-14 Mitsubishi Electric Corp リングオシレータ回路
JP2998944B2 (ja) * 1991-12-19 2000-01-17 シャープ株式会社 リングオシレータ
US5239274A (en) * 1992-05-26 1993-08-24 Digital Equipment Corporation Voltage-controlled ring oscillator using complementary differential buffers for generating multiple phase signals
US5272453A (en) * 1992-08-03 1993-12-21 Motorola Inc. Method and apparatus for switching between gain curves of a voltage controlled oscillator
JPH06152334A (ja) * 1992-11-06 1994-05-31 Mitsubishi Electric Corp リングオシレータおよび定電圧発生回路
JPH06260837A (ja) * 1993-03-04 1994-09-16 Nec Ic Microcomput Syst Ltd 発振回路
JP3026474B2 (ja) * 1993-04-07 2000-03-27 株式会社東芝 半導体集積回路
KR0132641B1 (ko) * 1993-05-25 1998-04-16 세끼모또 타다히로 기판 바이어스 회로
US5578954A (en) * 1993-06-02 1996-11-26 National Semiconductor Corporation Self-timing four-phase clock generator
US5398001A (en) * 1993-06-02 1995-03-14 National Semiconductor Corporation Self-timing four-phase clock generator
US5341112A (en) * 1993-06-09 1994-08-23 Rockwell International Corporation Temperature stable oscillator circuit apparatus
US5442325A (en) * 1993-10-08 1995-08-15 Texas Instruments Incorporated Voltage-controlled oscillator and system with reduced sensitivity to power supply variation
US5485126A (en) * 1994-01-25 1996-01-16 International Business Machines Corporation Ring oscillator circuit having output with fifty percent duty cycle
JPH07240670A (ja) * 1994-02-28 1995-09-12 Toshiba Corp リング発振回路
JP3703516B2 (ja) * 1994-04-25 2005-10-05 セイコーインスツル株式会社 発振回路
US5477198A (en) * 1994-06-23 1995-12-19 At&T Global Information Solutions Company Extendible-range voltage controlled oscillator
US5559473A (en) * 1994-06-23 1996-09-24 At&T Global Information Solutions Company Multi-range voltage controlled oscillator
US5440277A (en) * 1994-09-02 1995-08-08 International Business Machines Corporation VCO bias circuit with low supply and temperature sensitivity
JPH08130449A (ja) * 1994-11-01 1996-05-21 Mitsubishi Electric Corp 電圧制御型遅延回路およびそれを用いた内部クロック発生回路
JP3780030B2 (ja) * 1995-06-12 2006-05-31 株式会社ルネサステクノロジ 発振回路およびdram
US5748050A (en) 1996-03-29 1998-05-05 Symbios Logic Inc. Linearization method and apparatus for voltage controlled oscillator
KR0177586B1 (ko) * 1996-06-29 1999-04-01 김주용 오실레이터 출력 발생장치
US6034557A (en) * 1998-07-31 2000-03-07 Xilinx, Inc. Delay circuit with temperature and voltage stability
JP2000077984A (ja) * 1998-08-31 2000-03-14 Nec Corp リングオッシレータと遅延回路
US6262616B1 (en) * 1999-10-08 2001-07-17 Cirrus Logic, Inc. Open loop supply independent digital/logic delay circuit
US6469533B1 (en) * 2000-04-10 2002-10-22 Intel Corporation Measuring a characteristic of an integrated circuit
JP2002091604A (ja) * 2000-09-19 2002-03-29 Mitsubishi Electric Corp クロック発生回路
US6529058B2 (en) 2001-01-11 2003-03-04 Broadcom Corporation Apparatus and method for obtaining stable delays for clock signals
US6867638B2 (en) * 2002-01-10 2005-03-15 Silicon Storage Technology, Inc. High voltage generation and regulation system for digital multilevel nonvolatile memory
KR100502972B1 (ko) * 2002-12-04 2005-07-26 주식회사 코아매직 리프레쉬 동작용 클럭발생기
US7012459B2 (en) * 2003-04-02 2006-03-14 Sun Microsystems, Inc. Method and apparatus for regulating heat in an asynchronous system
US7069525B2 (en) * 2003-07-18 2006-06-27 International Business Machines Corporation Method and apparatus for determining characteristics of MOS devices
US7460604B2 (en) 2004-06-03 2008-12-02 Silicon Laboratories Inc. RF isolator for isolating voltage sensing and gate drivers
US7447492B2 (en) 2004-06-03 2008-11-04 Silicon Laboratories Inc. On chip transformer isolator
US8049573B2 (en) * 2004-06-03 2011-11-01 Silicon Laboratories Inc. Bidirectional multiplexed RF isolator
US7302247B2 (en) * 2004-06-03 2007-11-27 Silicon Laboratories Inc. Spread spectrum isolator
US7738568B2 (en) * 2004-06-03 2010-06-15 Silicon Laboratories Inc. Multiplexed RF isolator
US7737871B2 (en) * 2004-06-03 2010-06-15 Silicon Laboratories Inc. MCU with integrated voltage isolator to provide a galvanic isolation between input and output
US8198951B2 (en) * 2004-06-03 2012-06-12 Silicon Laboratories Inc. Capacitive isolation circuitry
US7902627B2 (en) * 2004-06-03 2011-03-08 Silicon Laboratories Inc. Capacitive isolation circuitry with improved common mode detector
US7577223B2 (en) * 2004-06-03 2009-08-18 Silicon Laboratories Inc. Multiplexed RF isolator circuit
US8441325B2 (en) * 2004-06-03 2013-05-14 Silicon Laboratories Inc. Isolator with complementary configurable memory
US7821428B2 (en) * 2004-06-03 2010-10-26 Silicon Laboratories Inc. MCU with integrated voltage isolator and integrated galvanically isolated asynchronous serial data link
US8169108B2 (en) 2004-06-03 2012-05-01 Silicon Laboratories Inc. Capacitive isolator
EP2038668B1 (en) * 2006-06-20 2010-12-29 Nxp B.V. Semiconductor device with test structure and semiconductor device test method
JP2009010498A (ja) * 2007-06-26 2009-01-15 Nec Electronics Corp 半導体回路
US7795927B2 (en) * 2007-08-17 2010-09-14 Raytheon Company Digital circuits with adaptive resistance to single event upset
KR100928096B1 (ko) * 2007-11-07 2009-11-24 주식회사 동부하이텍 전압 제어 발진기
KR100948076B1 (ko) * 2008-04-14 2010-03-16 주식회사 하이닉스반도체 지연회로 및 이를 포함하는 반도체 메모리장치
KR20100102460A (ko) * 2009-03-11 2010-09-24 삼성전자주식회사 역 온도반응 딜레이 셀
US8451032B2 (en) 2010-12-22 2013-05-28 Silicon Laboratories Inc. Capacitive isolator with schmitt trigger
US8797106B2 (en) 2012-03-28 2014-08-05 Micron Technology, Inc. Circuits, apparatuses, and methods for oscillators
JP5939947B2 (ja) * 2012-09-27 2016-06-22 トランスフォーム・ジャパン株式会社 ショットキー型トランジスタの駆動回路
JP6479484B2 (ja) * 2015-01-15 2019-03-06 ラピスセミコンダクタ株式会社 発振回路
US9692396B2 (en) * 2015-05-13 2017-06-27 Qualcomm Incorporated Ring oscillator architecture with controlled sensitivity to supply voltage
EP3293888B1 (en) 2016-09-13 2020-08-26 Allegro MicroSystems, LLC Signal isolator having bidirectional communication between die
US10547273B2 (en) * 2017-10-27 2020-01-28 Advanced Micro Devices, Inc. Compact supply independent temperature sensor
US11115244B2 (en) 2019-09-17 2021-09-07 Allegro Microsystems, Llc Signal isolator with three state data transmission
US11451220B2 (en) 2020-11-23 2022-09-20 Silanna Asia Pte Ltd Noise-tolerant delay circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022593B1 (ko) * 1970-06-15 1975-07-31
JPS5686509A (en) * 1979-12-17 1981-07-14 Seiko Epson Corp Voltage controlled oscillator
JPS56110267A (en) * 1980-02-06 1981-09-01 Nec Corp Semiconductor device
WO1982004345A1 (en) * 1981-05-27 1982-12-09 Aswell Cecil James Power supply control for integrated circuit
JPS58207728A (ja) * 1982-05-28 1983-12-03 Nec Corp トランジスタ回路
US4388536A (en) * 1982-06-21 1983-06-14 General Electric Company Pulse generator for IC fabrication
US4592087B1 (en) * 1983-12-08 1996-08-13 Knowles Electronics Inc Class D hearing aid amplifier
JPS60158717A (ja) * 1984-01-27 1985-08-20 Seiko Instr & Electronics Ltd 温度補償付発振回路
JPS60251722A (ja) * 1984-05-29 1985-12-12 Sony Corp D/a変換回路
JPS62214716A (ja) * 1986-03-14 1987-09-21 Matsushita Electric Ind Co Ltd Cmos可変遅延線

Also Published As

Publication number Publication date
EP0254212B1 (en) 1992-10-28
JPS6324712A (ja) 1988-02-02
EP0254212A3 (en) 1988-04-06
US4853654A (en) 1989-08-01
EP0254212A2 (en) 1988-01-27
DE3782367T2 (de) 1993-05-06
DE3782367D1 (de) 1992-12-03
KR950008439B1 (ko) 1995-07-31

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