DE69016701D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE69016701D1
DE69016701D1 DE69016701T DE69016701T DE69016701D1 DE 69016701 D1 DE69016701 D1 DE 69016701D1 DE 69016701 T DE69016701 T DE 69016701T DE 69016701 T DE69016701 T DE 69016701T DE 69016701 D1 DE69016701 D1 DE 69016701D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016701T
Other languages
English (en)
Other versions
DE69016701T2 (de
Inventor
Hidenobu Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69016701D1 publication Critical patent/DE69016701D1/de
Application granted granted Critical
Publication of DE69016701T2 publication Critical patent/DE69016701T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE69016701T 1989-05-25 1990-05-24 Halbleiterspeicher. Expired - Fee Related DE69016701T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13412089A JP2830066B2 (ja) 1989-05-25 1989-05-25 半導体メモリ

Publications (2)

Publication Number Publication Date
DE69016701D1 true DE69016701D1 (de) 1995-03-23
DE69016701T2 DE69016701T2 (de) 1995-06-08

Family

ID=15120932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016701T Expired - Fee Related DE69016701T2 (de) 1989-05-25 1990-05-24 Halbleiterspeicher.

Country Status (5)

Country Link
US (1) US5161123A (de)
EP (1) EP0399820B1 (de)
JP (1) JP2830066B2 (de)
KR (1) KR0155163B1 (de)
DE (1) DE69016701T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478097A (ja) * 1990-07-13 1992-03-12 Sony Corp メモリ装置
KR960010736B1 (ko) * 1991-02-19 1996-08-07 미쓰비시뎅끼 가부시끼가이샤 마스크 rom 및 그 제조방법
FR2682505B1 (fr) * 1991-10-11 1996-09-27 Sgs Thomson Microelectronics Dispositif pour detecter le contenu de cellules au sein d'une memoire, notamment une memoire eprom, procede mis en óoeuvre dans ce dispositif, et memoire munie de ce dispositif.
JPH06139784A (ja) * 1992-10-21 1994-05-20 Takayama:Kk メモリデバイス
JP2894115B2 (ja) * 1992-11-10 1999-05-24 松下電器産業株式会社 カラム選択回路
EP1505605A1 (de) 2003-08-06 2005-02-09 STMicroelectronics S.r.l. Verbesserte Leseanordnung für einen Halbleiterspeicher mit Bitleitungs-Vorladungs- und -Entladungsfunktionen
US7203096B2 (en) * 2005-06-30 2007-04-10 Infineon Technologies Flash Gmbh & Co. Kg Method and apparatus for sensing a state of a memory cell
JP2007141399A (ja) * 2005-11-21 2007-06-07 Renesas Technology Corp 半導体装置
CN106486143B (zh) * 2015-08-26 2019-07-02 中芯国际集成电路制造(上海)有限公司 灵敏放大器
KR102511901B1 (ko) * 2016-04-11 2023-03-20 에스케이하이닉스 주식회사 넓은 동작 영역을 갖는 불휘발성 메모리 소자

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374328A (en) * 1976-12-15 1978-07-01 Toshiba Corp Mos-type read only memory
JPS603709B2 (ja) * 1980-02-05 1985-01-30 株式会社東芝 半導体記憶装置
US4461965A (en) * 1980-08-18 1984-07-24 National Semiconductor Corporation High speed CMOS sense amplifier
DE3176751D1 (en) * 1980-10-15 1988-06-23 Toshiba Kk Semiconductor memory with improved data programming time
JPS6325894A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 半導体記憶装置

Also Published As

Publication number Publication date
EP0399820A3 (de) 1992-04-08
EP0399820B1 (de) 1995-02-08
KR900019041A (ko) 1990-12-22
EP0399820A2 (de) 1990-11-28
US5161123A (en) 1992-11-03
JP2830066B2 (ja) 1998-12-02
KR0155163B1 (ko) 1998-12-01
JPH02310895A (ja) 1990-12-26
DE69016701T2 (de) 1995-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee