DE68918193T2 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE68918193T2
DE68918193T2 DE68918193T DE68918193T DE68918193T2 DE 68918193 T2 DE68918193 T2 DE 68918193T2 DE 68918193 T DE68918193 T DE 68918193T DE 68918193 T DE68918193 T DE 68918193T DE 68918193 T2 DE68918193 T2 DE 68918193T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918193T
Other languages
English (en)
Other versions
DE68918193D1 (de
Inventor
Keiji Co Intellectual Maruyama
Ryosuke Co Intellectual Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68918193D1 publication Critical patent/DE68918193D1/de
Publication of DE68918193T2 publication Critical patent/DE68918193T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE68918193T 1988-07-26 1989-07-26 Halbleiterspeicher. Expired - Fee Related DE68918193T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18628788 1988-07-26
JP63328168A JPH0778991B2 (ja) 1988-07-26 1988-12-26 半導体メモリ

Publications (2)

Publication Number Publication Date
DE68918193D1 DE68918193D1 (de) 1994-10-20
DE68918193T2 true DE68918193T2 (de) 1995-03-02

Family

ID=26503664

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918193T Expired - Fee Related DE68918193T2 (de) 1988-07-26 1989-07-26 Halbleiterspeicher.

Country Status (5)

Country Link
US (1) US5031147A (de)
EP (1) EP0352768B1 (de)
JP (1) JPH0778991B2 (de)
KR (1) KR930004708B1 (de)
DE (1) DE68918193T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19629735C2 (de) * 1995-12-11 2001-10-18 Mitsubishi Electric Corp Halbleiterspeichereinrichtung die eine Selbstauffrischungs-Vorrichtung aufweist

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821607B2 (ja) * 1990-05-11 1996-03-04 株式会社東芝 ダイナミック記憶装置およびそのバーンイン方法
JP3225531B2 (ja) * 1990-05-15 2001-11-05 セイコーエプソン株式会社 メモリカード
EP0457310B1 (de) * 1990-05-15 1998-01-07 Seiko Epson Corporation Speicherkarte
US5233328A (en) * 1990-09-17 1993-08-03 Fmc Corporation Method for processing compacted data
US5157634A (en) * 1990-10-23 1992-10-20 International Business Machines Corporation Dram having extended refresh time
JPH06124587A (ja) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp ダイナミックランダムアクセスメモリ装置
US5365486A (en) * 1992-12-16 1994-11-15 Texas Instruments Incorporated Method and circuitry for refreshing a flash electrically erasable, programmable read only memory
JP3165585B2 (ja) * 1994-05-13 2001-05-14 シャープ株式会社 情報処理装置
US5471188A (en) 1994-10-07 1995-11-28 International Business Machines Corporation Fast comparator circuit
US5557577A (en) * 1995-05-01 1996-09-17 Apple Computer, Inc. System and method for performing wake-up operations to a memory
US5557578A (en) * 1995-05-01 1996-09-17 Apple Computer, Inc. Dynamic memory refresh controller and method
US6662263B1 (en) 2000-03-03 2003-12-09 Multi Level Memory Technology Sectorless flash memory architecture
US6396744B1 (en) 2000-04-25 2002-05-28 Multi Level Memory Technology Flash memory with dynamic refresh
US6856568B1 (en) 2000-04-25 2005-02-15 Multi Level Memory Technology Refresh operations that change address mappings in a non-volatile memory
US7079422B1 (en) 2000-04-25 2006-07-18 Samsung Electronics Co., Ltd. Periodic refresh operations for non-volatile multiple-bit-per-cell memory
US7283038B2 (en) * 2005-06-14 2007-10-16 International Business Machines Corporation Comparing counter contents for timing critical applications
JP3992449B2 (ja) * 2001-03-29 2007-10-17 富士通株式会社 半導体記憶装置
US6560155B1 (en) * 2001-10-24 2003-05-06 Micron Technology, Inc. System and method for power saving memory refresh for dynamic random access memory devices after an extended interval
US6999368B2 (en) * 2003-05-27 2006-02-14 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and semiconductor integrated circuit device
JP4516483B2 (ja) * 2005-06-07 2010-08-04 富士通セミコンダクター株式会社 半導体記憶装置及び情報処理システム

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829664A (en) * 1971-12-29 1974-08-13 Casio Computer Co Ltd Numerical value-ranking apparatus
GB1545117A (en) * 1976-05-25 1979-05-02 Nat Res Dev Comparison apparatus eg for use in character recognition
JPS53121431A (en) * 1977-03-31 1978-10-23 Nec Corp Information processing unit
US4110737A (en) * 1977-08-22 1978-08-29 The Singer Company Character recognition apparatus for serially comparing an unknown character with a plurality of reference characters
JPS5661086A (en) * 1979-10-23 1981-05-26 Toshiba Corp Refresh system for dynamic memory
JPS5884549A (ja) * 1981-11-16 1983-05-20 Nec Corp 無線選択呼出受信機
JPS58182193A (ja) * 1982-04-19 1983-10-25 Toshiba Corp リフレツシユ制御装置
JPS58206939A (ja) * 1982-05-27 1983-12-02 Seiko Instr & Electronics Ltd 電子式体温計
EP0116774B1 (de) * 1982-12-27 1991-07-24 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung mit einem Auffrischungsmechanismus
EP0164735A3 (de) * 1984-06-11 1988-11-09 Nec Corporation Mikroprozessor mit Erfrischungsschaltung für dynamischen Speicher
JPS6199199A (ja) * 1984-09-28 1986-05-17 株式会社東芝 音声分析合成装置
US4716552A (en) * 1985-03-29 1987-12-29 Advanced Micro Devices, Inc. Method and apparatus for non-destructive access of volatile and non-volatile data in a shadow memory array
JPS621187A (ja) * 1985-06-26 1987-01-07 Toshiba Corp ダイナミツクメモリのアクセス制御方式
CA1286420C (en) * 1987-10-14 1991-07-16 Youssef Alfred Geadah Fifo buffer controller
CA1286421C (en) * 1987-10-14 1991-07-16 Martin Claude Lefebvre Message fifo buffer controller
JPH01267896A (ja) * 1988-04-19 1989-10-25 Toshiba Corp 半導体メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19629735C2 (de) * 1995-12-11 2001-10-18 Mitsubishi Electric Corp Halbleiterspeichereinrichtung die eine Selbstauffrischungs-Vorrichtung aufweist

Also Published As

Publication number Publication date
US5031147A (en) 1991-07-09
KR910003656A (ko) 1991-02-28
EP0352768B1 (de) 1994-09-14
JPH0778991B2 (ja) 1995-08-23
KR930004708B1 (ko) 1993-06-03
EP0352768A2 (de) 1990-01-31
EP0352768A3 (de) 1991-11-06
DE68918193D1 (de) 1994-10-20
JPH02126493A (ja) 1990-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee