DE3788573D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE3788573D1
DE3788573D1 DE87300389T DE3788573T DE3788573D1 DE 3788573 D1 DE3788573 D1 DE 3788573D1 DE 87300389 T DE87300389 T DE 87300389T DE 3788573 T DE3788573 T DE 3788573T DE 3788573 D1 DE3788573 D1 DE 3788573D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE87300389T
Other languages
English (en)
Other versions
DE3788573T2 (de
Inventor
Masaki C O Patent Divi Ogihara
Yoshio C O Patent Divisi Okada
Shuso C O Patent Divisio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE3788573D1 publication Critical patent/DE3788573D1/de
Application granted granted Critical
Publication of DE3788573T2 publication Critical patent/DE3788573T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE3788573T 1986-01-17 1987-01-16 Halbleiterspeicher. Expired - Lifetime DE3788573T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61007271A JPS62165787A (ja) 1986-01-17 1986-01-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3788573D1 true DE3788573D1 (de) 1994-02-10
DE3788573T2 DE3788573T2 (de) 1994-05-26

Family

ID=11661364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3788573T Expired - Lifetime DE3788573T2 (de) 1986-01-17 1987-01-16 Halbleiterspeicher.

Country Status (4)

Country Link
EP (1) EP0230385B1 (de)
JP (1) JPS62165787A (de)
KR (1) KR870007517A (de)
DE (1) DE3788573T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061060B2 (ja) * 1989-09-05 2000-07-10 株式会社東芝 マルチポートメモリ
JP2640543B2 (ja) * 1989-11-01 1997-08-13 日鉄セミコンダクター株式会社 半導体記憶装置
JPH03160684A (ja) * 1989-11-17 1991-07-10 Sanyo Electric Co Ltd 半導体記憶装置
JP3101298B2 (ja) * 1990-03-30 2000-10-23 株式会社東芝 半導体メモリ装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586233B2 (ja) * 1977-10-31 1983-02-03 株式会社日立製作所 メモリ
US4291392A (en) * 1980-02-06 1981-09-22 Mostek Corporation Timing of active pullup for dynamic semiconductor memory
JPS6045499B2 (ja) * 1980-04-15 1985-10-09 富士通株式会社 半導体記憶装置
JPS5771581A (en) * 1980-10-22 1982-05-04 Toshiba Corp Active boosting circuit
JPS58189898A (ja) * 1982-04-30 1983-11-05 Toshiba Corp ダイナミツク記憶装置
JPS5945692A (ja) * 1982-09-09 1984-03-14 Nec Corp メモリ回路

Also Published As

Publication number Publication date
JPH054753B2 (de) 1993-01-20
EP0230385A2 (de) 1987-07-29
EP0230385B1 (de) 1993-12-29
DE3788573T2 (de) 1994-05-26
JPS62165787A (ja) 1987-07-22
KR870007517A (ko) 1987-08-19
EP0230385A3 (en) 1989-10-25

Similar Documents

Publication Publication Date Title
DE3751002D1 (de) Halbleiterspeicher.
DE3778439D1 (de) Halbleiterspeicheranordnung.
DE3788747D1 (de) Halbleiterspeicher.
DE68911044D1 (de) Halbleiterspeicher.
DE3778067D1 (de) Zweitor-halbleiterspeicheranordnung.
DE3686994D1 (de) Halbleiterspeicher.
DE3687322D1 (de) Halbleiterspeicheranordnung.
DE3785509D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3786819D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3772137D1 (de) Halbleiter-speicheranordnung.
DE3771238D1 (de) Halbleiterspeicher.
DE3778408D1 (de) Halbleiterspeicheranordnung.
DE3787616D1 (de) Halbleiterspeicheranordnung.
DE3680562D1 (de) Halbleiterspeicheranordnung.
DE3675445D1 (de) Halbleiterspeicheranordnung.
DE68918193D1 (de) Halbleiterspeicher.
DE3577367D1 (de) Halbleiterspeicheranordnung.
DE3783666D1 (de) Halbleiterspeicheranordnung.
DE3575225D1 (de) Halbleiterspeicheranordnung.
DE3887823D1 (de) Halbleiterspeicher.
DE3576754D1 (de) Halbleiterspeicheranordnung.
DE3783493D1 (de) Halbleiterspeicheranordnung.
DE3789783D1 (de) Halbleiterspeicheranordnung.
DE68923899D1 (de) Halbleiterspeicher.
DE3578254D1 (de) Halbleiterspeicheranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition