KR920003526A - 반도체메모리 - Google Patents

반도체메모리 Download PDF

Info

Publication number
KR920003526A
KR920003526A KR1019910012448A KR910012448A KR920003526A KR 920003526 A KR920003526 A KR 920003526A KR 1019910012448 A KR1019910012448 A KR 1019910012448A KR 910012448 A KR910012448 A KR 910012448A KR 920003526 A KR920003526 A KR 920003526A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
thin film
film transistor
flop
flip
Prior art date
Application number
KR1019910012448A
Other languages
English (en)
Inventor
시게끼 가야마
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920003526A publication Critical patent/KR920003526A/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

반도체메모리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명의 일실시예의 평면도.
제2도는 본원 발명을 적용할 수 있는 완전CMOS 형 SRAM의 등가회로도.

Claims (1)

  1. 박막트랜지스터를 부하소자로 하는 플립플롭을 사용하여 메모리 셀이 구성되어 있는 반도체 메모리에 있어서, 상기 박막트랜지스터의 채널영역이 굴곡부를 가지고 있는 반도체 메모리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910012448A 1990-07-25 1991-07-20 반도체메모리 KR920003526A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-196822 1990-07-25
JP2196822A JPH0482264A (ja) 1990-07-25 1990-07-25 半導体メモリ

Publications (1)

Publication Number Publication Date
KR920003526A true KR920003526A (ko) 1992-02-29

Family

ID=16364243

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012448A KR920003526A (ko) 1990-07-25 1991-07-20 반도체메모리

Country Status (4)

Country Link
EP (1) EP0468422B1 (ko)
JP (1) JPH0482264A (ko)
KR (1) KR920003526A (ko)
DE (1) DE69127666T2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3236720B2 (ja) * 1993-02-10 2001-12-10 三菱電機株式会社 半導体記憶装置およびその製造方法
JP2689940B2 (ja) * 1995-02-28 1997-12-10 日本電気株式会社 スタティック型メモリセル

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760557A (en) * 1986-09-05 1988-07-26 General Electric Company Radiation hard memory cell circuit with high inverter impedance ratio

Also Published As

Publication number Publication date
JPH0482264A (ja) 1992-03-16
EP0468422A2 (en) 1992-01-29
EP0468422B1 (en) 1997-09-17
DE69127666D1 (de) 1997-10-23
EP0468422A3 (en) 1993-04-07
DE69127666T2 (de) 1998-04-09

Similar Documents

Publication Publication Date Title
KR850005160A (ko) 적층형 반도체 기억장치
KR970066691A (ko) 1/f 노이즈의 영향을 저감시키고, 셀의 전압범위를 증가시키며, 셀의 크기를 축소시키는 능동 화소 센서 셀
KR880011809A (ko) 불휘발성 반도체기억장치
KR920000145A (ko) 반도체 메모리
KR940020424A (ko) 정적 반도체 기억 장치
KR900011012A (ko) 반도체 메모리 집적회로
KR900017193A (ko) 스태틱형 메모리
KR920008927A (ko) 반도체 비휘발성 메모리 디바이스
KR920010903A (ko) 스태틱 랜덤 액세스 메모리용 셀
KR850001642A (ko) 증폭기 회로
KR870010549A (ko) 반도체 기억장치
KR910010722A (ko) 반도체기억장치
KR910007159A (ko) Mos형 반도체장치
KR920010648A (ko) 불휘발성 반도체 메모리
KR920010906A (ko) 반도체 기억장치
KR920003526A (ko) 반도체메모리
KR900019041A (ko) 반도체 메모리
KR910016005A (ko) 반도체 집적회로
KR880004484A (ko) 메모리 셀회로
KR940012631A (ko) 반도체 메모리장치
KR900004040A (ko) 반도체 집적회로 디바이스
KR920015367A (ko) 반도체 메모리장치
KR910007074A (ko) 박막 트랜지스터
KR920007509A (ko) 박형 메모리 모듈
KR920003769A (ko) 서라운드 제어회로

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid