SE8009001L - Halvledaranordning for uppfriskning av minnescell - Google Patents

Halvledaranordning for uppfriskning av minnescell

Info

Publication number
SE8009001L
SE8009001L SE8009001A SE8009001A SE8009001L SE 8009001 L SE8009001 L SE 8009001L SE 8009001 A SE8009001 A SE 8009001A SE 8009001 A SE8009001 A SE 8009001A SE 8009001 L SE8009001 L SE 8009001L
Authority
SE
Sweden
Prior art keywords
capacitor
memory cell
refresh
writing
mos
Prior art date
Application number
SE8009001A
Other languages
Unknown language ( )
English (en)
Inventor
H J Boll
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE8009001L publication Critical patent/SE8009001L/sv

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
SE8009001A 1980-01-07 1980-12-19 Halvledaranordning for uppfriskning av minnescell SE8009001L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/109,777 US4292677A (en) 1980-01-07 1980-01-07 Self-refreshed capacitor memory cell

Publications (1)

Publication Number Publication Date
SE8009001L true SE8009001L (sv) 1981-07-08

Family

ID=22329511

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8009001A SE8009001L (sv) 1980-01-07 1980-12-19 Halvledaranordning for uppfriskning av minnescell

Country Status (12)

Country Link
US (1) US4292677A (sv)
JP (1) JPS56101695A (sv)
BE (1) BE886964A (sv)
CA (1) CA1135853A (sv)
DD (1) DD156857A5 (sv)
DE (1) DE3100129A1 (sv)
ES (1) ES8205074A1 (sv)
FR (1) FR2474742A1 (sv)
GB (1) GB2067867B (sv)
IT (1) IT1134949B (sv)
NL (1) NL8100020A (sv)
SE (1) SE8009001L (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413329A (en) * 1980-12-24 1983-11-01 International Business Machines Corporation Dynamic memory cell
DE3235835A1 (de) * 1982-09-28 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Halbleiter-speicherzelle
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
WO2000019444A1 (de) * 1998-09-30 2000-04-06 Infineon Technologies Ag Single-port speicherzelle
US6768668B2 (en) * 2001-06-12 2004-07-27 Infineon Technologies Aktiengesellschaft Converting volatile memory to non-volatile memory
US6686729B1 (en) 2002-10-15 2004-02-03 Texas Instruments Incorporated DC/DC switching regulator having reduced switching loss

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
US4122550A (en) * 1978-02-08 1978-10-24 Intel Corporation Low power random access memory with self-refreshing cells
US4203159A (en) * 1978-10-05 1980-05-13 Wanlass Frank M Pseudostatic electronic memory

Also Published As

Publication number Publication date
NL8100020A (nl) 1981-08-03
IT8119020A0 (it) 1981-01-06
FR2474742B1 (sv) 1984-01-27
ES498280A0 (es) 1982-06-01
US4292677A (en) 1981-09-29
BE886964A (fr) 1981-05-04
CA1135853A (en) 1982-11-16
DD156857A5 (de) 1982-09-22
DE3100129A1 (de) 1981-11-19
FR2474742A1 (fr) 1981-07-31
GB2067867B (en) 1983-10-26
ES8205074A1 (es) 1982-06-01
GB2067867A (en) 1981-07-30
JPS56101695A (en) 1981-08-14
IT1134949B (it) 1986-08-20

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