KR910017636A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR910017636A
KR910017636A KR1019910001127A KR910001127A KR910017636A KR 910017636 A KR910017636 A KR 910017636A KR 1019910001127 A KR1019910001127 A KR 1019910001127A KR 910001127 A KR910001127 A KR 910001127A KR 910017636 A KR910017636 A KR 910017636A
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KR
South Korea
Prior art keywords
bit line
source
drain
mos transistor
bit
Prior art date
Application number
KR1019910001127A
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English (en)
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KR0127296B1 (ko
Inventor
다미히로 이시무라
마사후미 미야와끼
산페이 미야모또
히데노리 우에하라
Original Assignee
고스기 노부미쓰
오끼덴끼고오교 가부시끼가이샤
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Application filed by 고스기 노부미쓰, 오끼덴끼고오교 가부시끼가이샤 filed Critical 고스기 노부미쓰
Publication of KR910017636A publication Critical patent/KR910017636A/ko
Application granted granted Critical
Publication of KR0127296B1 publication Critical patent/KR0127296B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 실시예를 나타낸 반도체 기억장치의 요부의 회로도, 제 6도는 제 1도 중의 B-B선 단면도, 제 7도는 제 1도의 전압 파형도.

Claims (1)

  1. 복수의 워어드선과, 상기 워어드선과 교차하는 제 및 제 2의 비트선으로된 복수쌍의 비트수쌍과, 상기 각 워어드선 및 비트선쌍의 교차개소에 각각 접속된 복수의 메모리 셀과, 상기 각 비트선쌍의 전위차를 각각 검지, 증폭하는 보수의 센스앰프회로를 갖추고, 상기 복수의 센스앰프회로 전부 또는 그 일부가 반도체 기판내의 분리층에 형성된 CMOS 굿의 반도체 기억장치에 있어서, 상기한 분리층에 형성되는 센스임프회로는 게이트가 상기 제 2의 비트선에, 드레인 또는 소오스가 상기 제 1의 비트선에 각각 접속된 제 1의 MOS 트랜지스터와, 게이트가 상기 제 1의 비트선에, 드레인 또는 소오스가 상기 제 2의 비트선에 각각 접속된 제 2의 MOS 트랜지스터를 갖추고, 상기 제 1의 MOS 트랜지스터의 소오스또는 드레인과 상기 제 2의 MOS 트랜지스터의 소소스 또는 드레인을 센스업 구동신호선에 공통접속함과 함께, 상기 제 1 및 제 2의 MOS 트랜지스터의 분리층 바어어스원을 상기 센스엠프구동신호선에 접속한 것을 특징으로 하는 반도체 기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910001127A 1990-03-22 1991-01-23 반도체 기억장치 KR0127296B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP02072639A JP3093771B2 (ja) 1990-03-22 1990-03-22 半導体記憶装置
JP02-072639 1990-03-22
JP02-07239 1990-03-22

Publications (2)

Publication Number Publication Date
KR910017636A true KR910017636A (ko) 1991-11-05
KR0127296B1 KR0127296B1 (ko) 1997-12-29

Family

ID=13495158

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910001127A KR0127296B1 (ko) 1990-03-22 1991-01-23 반도체 기억장치

Country Status (5)

Country Link
US (2) US5087957A (ko)
EP (1) EP0449028B1 (ko)
JP (1) JP3093771B2 (ko)
KR (1) KR0127296B1 (ko)
DE (1) DE69119957T2 (ko)

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JPH04352467A (ja) * 1991-05-30 1992-12-07 Toshiba Corp Ｍｏｓ型半導体集積回路装置
WO1993005514A1 (en) * 1991-09-04 1993-03-18 Vlsi Technology, Inc. Anti-fuse structures and methods for making same
US5321647A (en) * 1992-05-07 1994-06-14 International Business Machines Corp. Semiconductor memory device and operational method with reduced well noise
US5323044A (en) * 1992-10-02 1994-06-21 Power Integrations, Inc. Bi-directional MOSFET switch
KR0133973B1 (ko) 1993-02-25 1998-04-20 기다오까 다까시 반도체 기억장치
JPH07211510A (ja) * 1994-01-27 1995-08-11 Nippondenso Co Ltd 半導体装置
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JP2751891B2 (ja) * 1995-09-29 1998-05-18 日本電気株式会社 半導体集積回路
JPH09199607A (ja) * 1996-01-18 1997-07-31 Nec Corp Ｃｍｏｓ半導体装置
US5973374A (en) * 1997-09-25 1999-10-26 Integrated Silicon Solution, Inc. Flash memory array having well contact structures
KR20000045475A (ko) * 1998-12-30 2000-07-15 김영환 웰 바이어싱 트랜지스터 형성방법
US20050283189A1 (en) * 1999-03-31 2005-12-22 Rosenblatt Peter L Systems and methods for soft tissue reconstruction
US6744301B1 (en) * 2000-11-07 2004-06-01 Intel Corporation System using body-biased sleep transistors to reduce leakage power while minimizing performance penalties and noise
US6445216B1 (en) 2001-05-14 2002-09-03 Intel Corporation Sense amplifier having reduced Vt mismatch in input matched differential pair
US7825488B2 (en) * 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US8089129B2 (en) * 2002-08-14 2012-01-03 Advanced Analogic Technologies, Inc. Isolated CMOS transistors
US8513087B2 (en) * 2002-08-14 2013-08-20 Advanced Analogic Technologies, Incorporated Processes for forming isolation structures for integrated circuit devices
US7330388B1 (en) 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation
DE102007007565A1 (de) * 2007-02-15 2008-08-21 Qimonda Ag Halbleiter-Speicherbauelement mit umschaltbarem Substratpotential, und Verfahren zum Betrieb eines Halbleiter-Speicherbauelements
US7795681B2 (en) * 2007-03-28 2010-09-14 Advanced Analogic Technologies, Inc. Isolated lateral MOSFET in epi-less substrate

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Also Published As

Publication number Publication date
EP0449028B1 (en) 1996-06-05
US5087957A (en) 1992-02-11
JP3093771B2 (ja) 2000-10-03
JPH03272171A (ja) 1991-12-03
DE69119957T2 (de) 1997-02-13
KR0127296B1 (ko) 1997-12-29
DE69119957D1 (de) 1996-07-11
US5177586A (en) 1993-01-05
EP0449028A1 (en) 1991-10-02

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