FR2762727B1 - Circuit integre avec etage de sortie haute tension - Google Patents
Circuit integre avec etage de sortie haute tensionInfo
- Publication number
- FR2762727B1 FR2762727B1 FR9705242A FR9705242A FR2762727B1 FR 2762727 B1 FR2762727 B1 FR 2762727B1 FR 9705242 A FR9705242 A FR 9705242A FR 9705242 A FR9705242 A FR 9705242A FR 2762727 B1 FR2762727 B1 FR 2762727B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- high voltage
- voltage output
- output stage
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3008—Bifet SEPP output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9705242A FR2762727B1 (fr) | 1997-04-24 | 1997-04-24 | Circuit integre avec etage de sortie haute tension |
US09/059,172 US6054880A (en) | 1997-04-24 | 1998-04-13 | Circuit with high-voltage output stage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9705242A FR2762727B1 (fr) | 1997-04-24 | 1997-04-24 | Circuit integre avec etage de sortie haute tension |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2762727A1 FR2762727A1 (fr) | 1998-10-30 |
FR2762727B1 true FR2762727B1 (fr) | 1999-07-16 |
Family
ID=9506388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9705242A Expired - Fee Related FR2762727B1 (fr) | 1997-04-24 | 1997-04-24 | Circuit integre avec etage de sortie haute tension |
Country Status (2)
Country | Link |
---|---|
US (1) | US6054880A (fr) |
FR (1) | FR2762727B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6204728B1 (en) | 1999-01-28 | 2001-03-20 | Maxim Integrated Products, Inc. | Radio frequency amplifier with reduced intermodulation distortion |
EP1421679A2 (fr) * | 2001-08-23 | 2004-05-26 | Koninklijke Philips Electronics N.V. | Circuit amplificateur de puissance haute frequence |
US6731163B2 (en) | 2002-03-08 | 2004-05-04 | Texas Instruments Incorporated | Miller de-compensation for differential input, differential output amplifier |
JP3810364B2 (ja) * | 2002-12-19 | 2006-08-16 | 松下電器産業株式会社 | 表示装置用ドライバ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4586004A (en) * | 1983-06-27 | 1986-04-29 | Saber Technology Corp. | Logic and amplifier cells |
JPH0626309B2 (ja) * | 1988-07-22 | 1994-04-06 | 株式会社東芝 | 出力回路 |
DE69415958T2 (de) * | 1994-03-29 | 1999-05-27 | St Microelectronics Srl | Leistungsendstufe mit begrenzter Stromsenkung während Hochimpedanzphase |
US5796276A (en) * | 1994-12-30 | 1998-08-18 | Sgs-Thomson Microelectronics, Inc. | High-side-driver gate drive circuit |
-
1997
- 1997-04-24 FR FR9705242A patent/FR2762727B1/fr not_active Expired - Fee Related
-
1998
- 1998-04-13 US US09/059,172 patent/US6054880A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6054880A (en) | 2000-04-25 |
FR2762727A1 (fr) | 1998-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20061230 |