KR890013771A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR890013771A
KR890013771A KR1019890001923A KR890001923A KR890013771A KR 890013771 A KR890013771 A KR 890013771A KR 1019890001923 A KR1019890001923 A KR 1019890001923A KR 890001923 A KR890001923 A KR 890001923A KR 890013771 A KR890013771 A KR 890013771A
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KR
South Korea
Prior art keywords
semiconductor device
resistive element
gate array
bicmos
note
Prior art date
Application number
KR1019890001923A
Other languages
English (en)
Other versions
KR920006750B1 (ko
Inventor
히로유키 하라
야스히로 스키모토
데츠 나가마츠
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR890013771A publication Critical patent/KR890013771A/ko
Application granted granted Critical
Publication of KR920006750B1 publication Critical patent/KR920006750B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11896—Masterslice integrated circuits using combined field effect/bipolar technology
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733—Controllable logic circuits
    • H03K19/1735—Controllable logic circuits by wiring, e.g. uncommitted logic arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체 장치의 전체적인 패턴평면도.
제2도 와 제3도는 제1도에 도시된 반도체 장치의 일부패턴 평면도.

Claims (2)

  1. 복수개의 MOS 트랜지스터(23, 24)에 대한 1개의 바이폴러트랜지스터(21)와 최소한 1개의 저항소자(26)를 갖춘 기본셀(11)이 동일 반도체기판상에 전면배치형으로 배치된 BiCMOS 게이트 어레이로 구성된 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 게이트 어레이로서 BiCMOS 논리게이트를 구성한 다음 저항치를 변화시킬 수 있는 저항소자구성으로 된 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001923A 1988-02-19 1989-02-18 반도체장치 KR920006750B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-35171 1988-02-19
JP63035171A JPH0831581B2 (ja) 1988-02-19 1988-02-19 半導体装置
JP63-035171 1988-02-19

Publications (2)

Publication Number Publication Date
KR890013771A true KR890013771A (ko) 1989-09-26
KR920006750B1 KR920006750B1 (ko) 1992-08-17

Family

ID=12434410

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001923A KR920006750B1 (ko) 1988-02-19 1989-02-18 반도체장치

Country Status (5)

Country Link
US (1) US5066996A (ko)
EP (1) EP0329152B1 (ko)
JP (1) JPH0831581B2 (ko)
KR (1) KR920006750B1 (ko)
DE (1) DE68927192T2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4002780C2 (de) * 1990-01-31 1995-01-19 Fraunhofer Ges Forschung Basiszelle für eine kanallose Gate-Array-Anordnung
EP0457150A3 (en) * 1990-05-14 1992-06-17 Lsi Logic Corporation Bicmos compacted logic array
US5055716A (en) * 1990-05-15 1991-10-08 Siarc Basic cell for bicmos gate array
JP2505910B2 (ja) * 1990-05-24 1996-06-12 株式会社東芝 半導体集積回路用セルライブラリ
JP2714996B2 (ja) * 1990-08-08 1998-02-16 三菱電機株式会社 半導体集積回路装置
JPH04103161A (ja) * 1990-08-22 1992-04-06 Toshiba Corp バイポーラトランジスタ・絶縁ゲート型トランジスタ混載半導体装置
US5764085A (en) * 1996-02-28 1998-06-09 Hewlett-Packard Company Method and apparatus for sharing a fet between a plurality of operationally exclusive logic gates
US9679686B2 (en) 2011-12-23 2017-06-13 Intel Corporation Process tunable resistor with user selectable values

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112343A (ja) * 1981-12-26 1983-07-04 Olympus Optical Co Ltd 半導体装置およびその製造方法
JPS59177944A (ja) * 1983-03-28 1984-10-08 Hitachi Ltd 半導体集積回路装置
JPS6035532A (ja) * 1983-07-29 1985-02-23 Fujitsu Ltd マスタスライス集積回路装置
JPS60179042U (ja) * 1984-05-09 1985-11-28 シャープ株式会社 ゲ−トアレイ半導体装置
JPS61100947A (ja) * 1984-10-22 1986-05-19 Toshiba Corp 半導体集積回路装置
JPH0815209B2 (ja) * 1985-01-25 1996-02-14 株式会社日立製作所 半導体集積回路装置
CN1003549B (zh) * 1985-01-25 1989-03-08 株式会社日立制作所 半导体集成电路器件

Also Published As

Publication number Publication date
DE68927192D1 (de) 1996-10-24
DE68927192T2 (de) 1997-03-06
EP0329152A3 (en) 1991-01-02
JPH0831581B2 (ja) 1996-03-27
EP0329152A2 (en) 1989-08-23
EP0329152B1 (en) 1996-09-18
KR920006750B1 (ko) 1992-08-17
JPH01211945A (ja) 1989-08-25
US5066996A (en) 1991-11-19

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