KR910003801A - 반도체 집적회로장치 및 그 제조방법 - Google Patents
반도체 집적회로장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR910003801A KR910003801A KR1019900011110A KR900011110A KR910003801A KR 910003801 A KR910003801 A KR 910003801A KR 1019900011110 A KR1019900011110 A KR 1019900011110A KR 900011110 A KR900011110 A KR 900011110A KR 910003801 A KR910003801 A KR 910003801A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- semiconductor integrated
- wiring
- power supply
- circuit device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제3도는 본 발명의 각 실시예를 나타낸 패턴 평면도.
Claims (3)
- 반도체집적회로의 셀간배선(8)과 동일한 폭과 배선피치로 형성되고, 상기 반도체집적회로칩의 기판전위(VDD)와 역전위인 내부전원(VSS)에 접속된 더미배선(4)을 구비하여 구성된 것을 특징으로 하는 반도체집적회로장치.
- 반도체집적회로의 셀간배선(8)과 동일한 폭과 배선피치로 형성되고, 상기 반도체집적회로칩의 기판전위(VDD)와 역전위인 내부전원(VSS)에 접속된 더미배선(4)을 상기 내부전원(VSS)에 전기적으로 절단하여 절단부(11)를 형성하고, 이 절단선 더미배선(41)을 오배선의 수정에 이용하는 것을 특징으로 하는 반도체집적회로장치의 제조방법.
- 반도체집적회로의 셀간배선(8)과 동일한 폭과 배선피치로 형성되고, 상기 반도체집적회로칩의 기판전위(VDD)와 역전위인 내부전원(VSS)에 접속된 더미배선(4)을 상기 내부전원(VSS)에 전기적으로 절단하여 절단부(11)를 형성하고, 이 절단선 더미배선(42)을 신호지연의 보정에 이용하는 것을 특징으로 하는 반도체집적회로장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1189312A JP2507618B2 (ja) | 1989-07-21 | 1989-07-21 | 半導体集積回路装置の製造方法 |
JP1-189312 | 1989-07-21 | ||
JP01-189312 | 1989-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910003801A true KR910003801A (ko) | 1991-02-28 |
KR930009023B1 KR930009023B1 (ko) | 1993-09-18 |
Family
ID=16239245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900011110A KR930009023B1 (ko) | 1989-07-21 | 1990-07-21 | 반도체집적회로장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5160995A (ko) |
EP (1) | EP0409256B1 (ko) |
JP (1) | JP2507618B2 (ko) |
KR (1) | KR930009023B1 (ko) |
DE (1) | DE69034109T2 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396100A (en) * | 1991-04-05 | 1995-03-07 | Hitachi, Ltd. | Semiconductor integrated circuit device having a compact arrangement of SRAM cells |
JPH0851159A (ja) * | 1994-08-05 | 1996-02-20 | Mitsubishi Electric Corp | 半導体集積回路 |
JP3180612B2 (ja) * | 1995-03-27 | 2001-06-25 | ヤマハ株式会社 | 半導体集積回路 |
US5814847A (en) * | 1996-02-02 | 1998-09-29 | National Semiconductor Corp. | General purpose assembly programmable multi-chip package substrate |
JP3159108B2 (ja) * | 1997-03-27 | 2001-04-23 | ヤマハ株式会社 | 半導体装置とその製造方法 |
US5917230A (en) * | 1997-04-09 | 1999-06-29 | United Memories, Inc. | Filter capacitor construction |
DE19825607C2 (de) * | 1998-06-08 | 2000-08-10 | Siemens Ag | Integrierte Halbleiterschaltung mit Füllstrukturen |
JP4598470B2 (ja) * | 1998-07-03 | 2010-12-15 | パナソニック株式会社 | 半導体装置 |
US6346427B1 (en) | 1999-08-18 | 2002-02-12 | Utmc Microelectronic Systems Inc. | Parameter adjustment in a MOS integrated circuit |
US6323113B1 (en) * | 1999-12-10 | 2001-11-27 | Philips Electronics North America Corporation | Intelligent gate-level fill methods for reducing global pattern density effects |
WO2005117115A1 (en) * | 2004-05-28 | 2005-12-08 | Koninklijke Philips Electronics N.V. | Chips with useful lines and dummy lines |
JP4364226B2 (ja) * | 2006-09-21 | 2009-11-11 | 株式会社東芝 | 半導体集積回路 |
US11239154B2 (en) * | 2015-01-20 | 2022-02-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Fishbone structure enhancing spacing with adjacent conductive line in power network |
US10523188B2 (en) | 2016-02-23 | 2019-12-31 | Samsung Electronics Co., Ltd. | Semiconductor device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852346B2 (ja) * | 1977-02-18 | 1983-11-22 | 株式会社東芝 | 半導体装置 |
JPS59198796A (ja) * | 1983-04-26 | 1984-11-10 | 日本電気株式会社 | 高密度多層配線基板 |
JPS60119749A (ja) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | 多層配線部材 |
JPH0658947B2 (ja) * | 1984-02-24 | 1994-08-03 | 株式会社日立製作所 | 半導体メモリ装置の製法 |
JPS61125045A (ja) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | 半導体装置 |
JPS6218732A (ja) * | 1985-07-15 | 1987-01-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 集積回路とその個性化方法 |
JPS62206855A (ja) * | 1986-03-06 | 1987-09-11 | Nec Corp | 半導体装置の配線構造 |
JPS6387744A (ja) * | 1986-09-30 | 1988-04-19 | Nec Corp | 半導体集積回路 |
JPS63304496A (ja) * | 1987-06-03 | 1988-12-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4916514A (en) * | 1988-05-31 | 1990-04-10 | Unisys Corporation | Integrated circuit employing dummy conductors for planarity |
JPH021928A (ja) * | 1988-06-10 | 1990-01-08 | Toshiba Corp | 半導体集積回路 |
-
1989
- 1989-07-21 JP JP1189312A patent/JP2507618B2/ja not_active Expired - Lifetime
-
1990
- 1990-07-20 EP EP90113945A patent/EP0409256B1/en not_active Expired - Lifetime
- 1990-07-20 DE DE69034109T patent/DE69034109T2/de not_active Expired - Lifetime
- 1990-07-21 KR KR1019900011110A patent/KR930009023B1/ko not_active IP Right Cessation
-
1991
- 1991-07-25 US US07/737,605 patent/US5160995A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2507618B2 (ja) | 1996-06-12 |
EP0409256A3 (en) | 1992-10-14 |
DE69034109D1 (de) | 2003-11-20 |
EP0409256B1 (en) | 2003-10-15 |
EP0409256A2 (en) | 1991-01-23 |
KR930009023B1 (ko) | 1993-09-18 |
US5160995A (en) | 1992-11-03 |
DE69034109T2 (de) | 2004-07-29 |
JPH0353547A (ja) | 1991-03-07 |
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Payment date: 20090827 Year of fee payment: 17 |
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