KR880002270A - 대규모 집적회로용 보호회로 - Google Patents

대규모 집적회로용 보호회로 Download PDF

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Publication number
KR880002270A
KR880002270A KR1019870008029A KR870008029A KR880002270A KR 880002270 A KR880002270 A KR 880002270A KR 1019870008029 A KR1019870008029 A KR 1019870008029A KR 870008029 A KR870008029 A KR 870008029A KR 880002270 A KR880002270 A KR 880002270A
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KR
South Korea
Prior art keywords
transistor
protection
scale integrated
integrated circuit
large scale
Prior art date
Application number
KR1019870008029A
Other languages
English (en)
Other versions
KR900004726B1 (ko
Inventor
시게노부 다이라
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR880002270A publication Critical patent/KR880002270A/ko
Application granted granted Critical
Publication of KR900004726B1 publication Critical patent/KR900004726B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

대규모 집적회로용 보호회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 이전기술의 2종류의 대규모 집적회로용 보호회로.
제3도는 제2도의 도시된 이전기술 보호회로의 횡단면도.

Claims (6)

  1. 보호될 금속 인슐레이터 반도체 트랜지스터 : 외부단자와 보호될 상기 트랜지스터 사이에 접속된 저항 ; 베이스 대규모 집적회로의 기판의 웰영역이며, 콜렉터는 보호될 상기 트랜지스터의 게이트와 상기 저항의 결합에 접속되며, 및 에미터가 전압원과 접속한 보호 트랜지스터; 및 상기 대규모 집적회로가 전원에 의해 에너가이즈되지 않을 때 상기 보호 트랜지스터의 상기 베이스가 부유상태가 되게하며 상기 대규모 집적회로가 전원에 의해 에너가이즈될 때 상기 보호 트랜지스터의 상기 베이스가 상기 전압원과 전도성있게 하며 상기 보호 트랜지스터의 베이스와 상기 전압원 사이에 접속된 보조 트랜지스터로 구성된 것을 특징으로 하는 대규모 집적회로용 보호회로.
  2. 제1항에 있어서, 보호될 상기 트랜지스터 및 상기 보조 트랜지스터는 금속 인슐레이터 반도체 트랜지스터이며 상기 보호 트랜지스터는 래터럴 바이폴라 트랜지스터인 것을 특징으로 하는 보호회로.
  3. 제1항에 있어서, 상기 저항은 상기 대규모 집적회로의 기판에 형성된 확산 저항영역으로 구성된 것을 특징으로 하는 보호회로.
  4. 제1항에 있어서, 보호될 상기 트랜지스터는 게이트가 공통접속된 상보형 금속 인슐레이터 반도체 트랜지스터의 형태로 구성되어 있는 것을 특징으로 하는 보호회로.
  5. 제1항에 있어서, 상기 저항이 접속된 상기 외부단자는 상기 대규모 집적회로의 입력단인 것을 특징으로 하는 보호회로.
  6. 제1항에 있어서, 상기 저항이 접속된 상기 외부단자는 상기 대규모 집적회로의 출력단인 것을 특징으로 하는 보호회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870008029A 1986-07-24 1987-07-23 대규모 집적회로용 보호회로 KR900004726B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61174766A JPS6331157A (ja) 1986-07-24 1986-07-24 Ｃ−ｍｏｓ　ｌｓｉの保護回路
JP174766 1986-07-24
JP61-174766 1986-07-24

Publications (2)

Publication Number Publication Date
KR880002270A true KR880002270A (ko) 1988-04-30
KR900004726B1 KR900004726B1 (ko) 1990-07-05

Family

ID=15984299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008029A KR900004726B1 (ko) 1986-07-24 1987-07-23 대규모 집적회로용 보호회로

Country Status (3)

Country Link
EP (1) EP0257774A1 (ko)
JP (1) JPS6331157A (ko)
KR (1) KR900004726B1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2055795T3 (es) * 1988-11-22 1994-09-01 At & T Corp Separador de salida de circuito integrado que tiene proteccion de esd mejorada.
US4990802A (en) * 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers
FR2652449A1 (fr) * 1989-09-22 1991-03-29 Sgs Thomson Microelectronics Dispositif de protection electrostatique pour broche de circuit integre.
US5465189A (en) * 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
CA2021184C (en) * 1990-07-13 2000-10-17 Orchard-Webb, John Input protection device
US5272586A (en) * 1991-01-29 1993-12-21 National Semiconductor Corporation Technique for improving ESD immunity
EP0549320B1 (en) * 1991-12-27 2000-10-04 Texas Instruments Incorporated Apparatus for ESD protection
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
JP4921925B2 (ja) * 1999-07-01 2012-04-25 株式会社東芝 半導体装置の製造方法
US6464003B2 (en) 2000-05-18 2002-10-15 Western Well Tool, Inc. Gripper assembly for downhole tractors
JP5360460B2 (ja) * 2007-10-10 2013-12-04 ソニー株式会社 静電保護回路
JP5416478B2 (ja) * 2009-05-18 2014-02-12 シャープ株式会社 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746946A (en) * 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
JPS57109375A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Mis type transistor protection circuit

Also Published As

Publication number Publication date
KR900004726B1 (ko) 1990-07-05
JPS6331157A (ja) 1988-02-09
EP0257774A1 (en) 1988-03-02

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