KR890008979A - 모놀리식 과전압 보호용 어셈블리 - Google Patents

모놀리식 과전압 보호용 어셈블리 Download PDF

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Publication number
KR890008979A
KR890008979A KR1019880014656A KR880014656A KR890008979A KR 890008979 A KR890008979 A KR 890008979A KR 1019880014656 A KR1019880014656 A KR 1019880014656A KR 880014656 A KR880014656 A KR 880014656A KR 890008979 A KR890008979 A KR 890008979A
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South Korea
Prior art keywords
regions
terminals
monolithic
substrate
predetermined
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Application number
KR1019880014656A
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English (en)
Inventor
로베르 뻬짜니
빠뜨리스 죄디
Original Assignee
왈 장-클로드
에스지에스-톰슨 마이크로일렉트로닉스 에스.에이
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Application filed by 왈 장-클로드, 에스지에스-톰슨 마이크로일렉트로닉스 에스.에이 filed Critical 왈 장-클로드
Publication of KR890008979A publication Critical patent/KR890008979A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

내용 없음

Description

모놀리식 과전압 보호용 어셈블리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 보호될 선에 접속된 보호 다이오드를 이용한 종래회로도.
제3도는 직접 보호 다이오드의 실시예를 도시한 도면.
제4A도는 본 발명에 따른 직접 보호 다이오드의 제1실시예. 제4B도는 제4A도에 도시된 직접회로의 등가회로도.

Claims (4)

  1. 소정 도전 형태의 반도체 기판에 형성된 모놀리식 보호 다이오드 어셈블리에 있어서, 제1 기판면(10)은 한 영역(13)은 기준전압 단자에 접속되고 다른 영역들(12-1…12-n)은 보호될 회로들에 접속되도록 되어있는 단자들(18-1…18-n)에 접속되는 다수의 분리 영역들로 구성되고, 제2 기판면은 상기 소정의 도전 형태로 균일하게 과도우핑 되고 부동전극(21)으로 피복되는 것을 특징으로 하는 모놀리식 보호 다이오드 어셈블리.
  2. 제1항에 따른 두개의 병렬 접속 모놀리식 어셈블리(30, 31)로 구성되는 보호 어셈블리에 있어서, 대응되는 영역들의 도전 형태는 서로 반대이고 대응되는 단자들은 부동 전극을 제외하고 상호 접속되는 것을 특징으로 하는 보호 어셈블리.
  3. 상기 분리 영역들 가운데서 기준전위 단자에 접속된 영역(34, 35)은 기판에 소정의 항복 전압을 갖는 애벌렌시 다이오드를 형성하기 위하여 도우핑 되고, 상기 단자들에 접속된 영역(32, 33)은 기판에 상기 소정의 항복 전압보다 큰 역 항복전압을 갖는 정류 다이오드를 형성하기 위하여 도우핑 됨을 특징으로 하는 제2항의 보호회로.
  4. 제3항에 있어서, 상기 단자들에 접속된 영역들은 제1확산 공정에 의하여 형성되고 계속하여 기준전압단자에 접속된 영역이 동시에 형성되는 동안 고 도우핑 밀도를 갖는 제2확산 공정에 의하여 형성됨을 특징으로하는 보호회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014656A 1987-11-24 1988-11-08 모놀리식 과전압 보호용 어셈블리 KR890008979A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR87/16605 1987-11-24
FR8716605A FR2623663B1 (fr) 1987-11-24 1987-11-24 Assemblage monolithique de diodes de protection et systemes de protection

Publications (1)

Publication Number Publication Date
KR890008979A true KR890008979A (ko) 1989-07-13

Family

ID=9357317

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014656A KR890008979A (ko) 1987-11-24 1988-11-08 모놀리식 과전압 보호용 어셈블리

Country Status (5)

Country Link
EP (1) EP0318404B1 (ko)
JP (1) JP2791067B2 (ko)
KR (1) KR890008979A (ko)
DE (1) DE3888636T2 (ko)
FR (1) FR2623663B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2672732B1 (fr) * 1991-02-12 1997-03-21 Sgs Thomson Microelectronics Structure monolithique comprenant deux ensembles de diodes de protection bidirectionnelles.
FR2686737A1 (fr) * 1992-01-29 1993-07-30 Sgs Thomson Microelectronics Composant de protection semiconducteur auto-protege.
FR2687009B1 (fr) * 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
FR2689317B1 (fr) * 1992-03-26 1994-06-17 Sgs Thomson Microelectronics Circuit integre constituant un reseau de diodes de protection.
FR2704094B1 (fr) * 1993-04-13 1995-07-07 Sgs Thomson Microelectronics Réseau de diodes monolithique.
FR2705173B1 (fr) * 1993-05-10 1995-07-28 Sgs Thomson Microelectronics Composant limiteur de courant serie.
FR2708145B1 (fr) * 1993-07-21 1995-10-06 Sgs Thomson Microelectronics Composant monolithique comprenant une diode de protection en parallèle avec une pluralité de paires de diodes en série.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216488A (en) * 1978-07-31 1980-08-05 Hutson Jearld L Lateral semiconductor diac
SE414357B (sv) * 1978-08-17 1980-07-21 Asea Ab Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp
EP0148577A1 (en) * 1983-11-14 1985-07-17 General Semiconductor Industries Inc. Overvoltage protection device
JPS60140878A (ja) * 1983-12-28 1985-07-25 Origin Electric Co Ltd サージ吸収用半導体装置
FR2574595B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Diac a electrodes coplanaires
JPS61206269A (ja) * 1985-03-11 1986-09-12 Nec Corp 半導体装置

Also Published As

Publication number Publication date
FR2623663A1 (fr) 1989-05-26
JP2791067B2 (ja) 1998-08-27
EP0318404B1 (fr) 1994-03-23
FR2623663B1 (fr) 1990-04-13
EP0318404A1 (fr) 1989-05-31
DE3888636T2 (de) 1994-11-24
DE3888636D1 (de) 1994-04-28
JPH01222624A (ja) 1989-09-05

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