JPS6455873A - Semiconductor integrated circuit having surge protecting function - Google Patents
Semiconductor integrated circuit having surge protecting functionInfo
- Publication number
- JPS6455873A JPS6455873A JP21349387A JP21349387A JPS6455873A JP S6455873 A JPS6455873 A JP S6455873A JP 21349387 A JP21349387 A JP 21349387A JP 21349387 A JP21349387 A JP 21349387A JP S6455873 A JPS6455873 A JP S6455873A
- Authority
- JP
- Japan
- Prior art keywords
- shape
- diode
- forming
- junction
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the occurrence of breakdown between a diode and an insulating isolation layer, by forming a P-N junction diode, wherein a diffused layer having a circular shape or a polygonal shape without acute angles is one region, in a semiconductor integrated circuit substrate, and connecting the P-N junction diode to at least one of parts between an output terminal and a power source line and the between the output terminal and a grounding line. CONSTITUTION:The planar shape of a P-type diffused layer 10, which forms a P-N junction diode between N-type epitaxial layers is made to be a polygonal shape without acute angles, e.g., an octangle shape. A contact window 12 has a similar shape. When the cross sectional shape of the P-N junction forming a surge protecting diode is not flat but in a recess shape, i.e., when one of the two regions forming the P-N junction is formed by a selective diffusion, the planar shape of said one region is set as described above. As the planar shape of the diffused layer, other polygons without acute angles or a circular shape can be used. Thus, the device can be implemented by only changing the shape of the mask for forming the diffused region for forming the diode. The formed semiconductor integrated circuit can be protected from surge positively. The concentration of an electric field between an insulating isolation layer and the diode region is alleviated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21349387A JPS6455873A (en) | 1987-08-27 | 1987-08-27 | Semiconductor integrated circuit having surge protecting function |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21349387A JPS6455873A (en) | 1987-08-27 | 1987-08-27 | Semiconductor integrated circuit having surge protecting function |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6455873A true JPS6455873A (en) | 1989-03-02 |
Family
ID=16640113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21349387A Pending JPS6455873A (en) | 1987-08-27 | 1987-08-27 | Semiconductor integrated circuit having surge protecting function |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6455873A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01304763A (en) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPH0521715A (en) * | 1991-07-16 | 1993-01-29 | Fujitsu Ltd | Semiconductor device |
WO2011104922A1 (en) * | 2010-02-26 | 2011-09-01 | 三菱電機株式会社 | Surge absorbing circuit and electronic device using the same |
US9659875B2 (en) | 2011-10-17 | 2017-05-23 | Rohm Co., Ltd. | Chip part and method of making the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515756A (en) * | 1974-07-02 | 1976-01-17 | Masaru Tokutake | KATSUSENKAMAKIKEIHOKI |
JPS58182441A (en) * | 1982-04-19 | 1983-10-25 | Hitachi Ltd | Field winding device for rotor |
JPS59119873A (en) * | 1982-12-27 | 1984-07-11 | Nec Home Electronics Ltd | Punch-through type constant-voltage element |
JPS6031266A (en) * | 1983-08-01 | 1985-02-18 | Nec Corp | Semiconductor device |
-
1987
- 1987-08-27 JP JP21349387A patent/JPS6455873A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515756A (en) * | 1974-07-02 | 1976-01-17 | Masaru Tokutake | KATSUSENKAMAKIKEIHOKI |
JPS58182441A (en) * | 1982-04-19 | 1983-10-25 | Hitachi Ltd | Field winding device for rotor |
JPS59119873A (en) * | 1982-12-27 | 1984-07-11 | Nec Home Electronics Ltd | Punch-through type constant-voltage element |
JPS6031266A (en) * | 1983-08-01 | 1985-02-18 | Nec Corp | Semiconductor device |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01304763A (en) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPH0521715A (en) * | 1991-07-16 | 1993-01-29 | Fujitsu Ltd | Semiconductor device |
WO2011104922A1 (en) * | 2010-02-26 | 2011-09-01 | 三菱電機株式会社 | Surge absorbing circuit and electronic device using the same |
US8582273B2 (en) | 2010-02-26 | 2013-11-12 | Mitsubishi Electric Corporation | Surge absorbing circuit and electric device using the same |
JP5436656B2 (en) * | 2010-02-26 | 2014-03-05 | 三菱電機株式会社 | Electronics |
KR101408537B1 (en) * | 2010-02-26 | 2014-06-17 | 미쓰비시덴키 가부시키가이샤 | Surge absorbing circuit and electronic device using the same |
US9659875B2 (en) | 2011-10-17 | 2017-05-23 | Rohm Co., Ltd. | Chip part and method of making the same |
US9773925B2 (en) | 2011-10-17 | 2017-09-26 | Rohm Co., Ltd. | Chip part and method of making the same |
US10164125B2 (en) | 2011-10-17 | 2018-12-25 | Rohm Co., Ltd. | Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit |
US10593814B2 (en) | 2011-10-17 | 2020-03-17 | Rohm Co., Ltd. | Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit |
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