JPS6455873A - Semiconductor integrated circuit having surge protecting function - Google Patents

Semiconductor integrated circuit having surge protecting function

Info

Publication number
JPS6455873A
JPS6455873A JP21349387A JP21349387A JPS6455873A JP S6455873 A JPS6455873 A JP S6455873A JP 21349387 A JP21349387 A JP 21349387A JP 21349387 A JP21349387 A JP 21349387A JP S6455873 A JPS6455873 A JP S6455873A
Authority
JP
Japan
Prior art keywords
shape
diode
forming
junction
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21349387A
Other languages
Japanese (ja)
Inventor
Toyohiro Shibayama
Tsukasa Kawahara
Koji Konishi
Akihiko Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP21349387A priority Critical patent/JPS6455873A/en
Publication of JPS6455873A publication Critical patent/JPS6455873A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the occurrence of breakdown between a diode and an insulating isolation layer, by forming a P-N junction diode, wherein a diffused layer having a circular shape or a polygonal shape without acute angles is one region, in a semiconductor integrated circuit substrate, and connecting the P-N junction diode to at least one of parts between an output terminal and a power source line and the between the output terminal and a grounding line. CONSTITUTION:The planar shape of a P-type diffused layer 10, which forms a P-N junction diode between N-type epitaxial layers is made to be a polygonal shape without acute angles, e.g., an octangle shape. A contact window 12 has a similar shape. When the cross sectional shape of the P-N junction forming a surge protecting diode is not flat but in a recess shape, i.e., when one of the two regions forming the P-N junction is formed by a selective diffusion, the planar shape of said one region is set as described above. As the planar shape of the diffused layer, other polygons without acute angles or a circular shape can be used. Thus, the device can be implemented by only changing the shape of the mask for forming the diffused region for forming the diode. The formed semiconductor integrated circuit can be protected from surge positively. The concentration of an electric field between an insulating isolation layer and the diode region is alleviated.
JP21349387A 1987-08-27 1987-08-27 Semiconductor integrated circuit having surge protecting function Pending JPS6455873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21349387A JPS6455873A (en) 1987-08-27 1987-08-27 Semiconductor integrated circuit having surge protecting function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21349387A JPS6455873A (en) 1987-08-27 1987-08-27 Semiconductor integrated circuit having surge protecting function

Publications (1)

Publication Number Publication Date
JPS6455873A true JPS6455873A (en) 1989-03-02

Family

ID=16640113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21349387A Pending JPS6455873A (en) 1987-08-27 1987-08-27 Semiconductor integrated circuit having surge protecting function

Country Status (1)

Country Link
JP (1) JPS6455873A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01304763A (en) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH0521715A (en) * 1991-07-16 1993-01-29 Fujitsu Ltd Semiconductor device
WO2011104922A1 (en) * 2010-02-26 2011-09-01 三菱電機株式会社 Surge absorbing circuit and electronic device using the same
US9659875B2 (en) 2011-10-17 2017-05-23 Rohm Co., Ltd. Chip part and method of making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515756A (en) * 1974-07-02 1976-01-17 Masaru Tokutake KATSUSENKAMAKIKEIHOKI
JPS58182441A (en) * 1982-04-19 1983-10-25 Hitachi Ltd Field winding device for rotor
JPS59119873A (en) * 1982-12-27 1984-07-11 Nec Home Electronics Ltd Punch-through type constant-voltage element
JPS6031266A (en) * 1983-08-01 1985-02-18 Nec Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515756A (en) * 1974-07-02 1976-01-17 Masaru Tokutake KATSUSENKAMAKIKEIHOKI
JPS58182441A (en) * 1982-04-19 1983-10-25 Hitachi Ltd Field winding device for rotor
JPS59119873A (en) * 1982-12-27 1984-07-11 Nec Home Electronics Ltd Punch-through type constant-voltage element
JPS6031266A (en) * 1983-08-01 1985-02-18 Nec Corp Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01304763A (en) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH0521715A (en) * 1991-07-16 1993-01-29 Fujitsu Ltd Semiconductor device
WO2011104922A1 (en) * 2010-02-26 2011-09-01 三菱電機株式会社 Surge absorbing circuit and electronic device using the same
US8582273B2 (en) 2010-02-26 2013-11-12 Mitsubishi Electric Corporation Surge absorbing circuit and electric device using the same
JP5436656B2 (en) * 2010-02-26 2014-03-05 三菱電機株式会社 Electronics
KR101408537B1 (en) * 2010-02-26 2014-06-17 미쓰비시덴키 가부시키가이샤 Surge absorbing circuit and electronic device using the same
US9659875B2 (en) 2011-10-17 2017-05-23 Rohm Co., Ltd. Chip part and method of making the same
US9773925B2 (en) 2011-10-17 2017-09-26 Rohm Co., Ltd. Chip part and method of making the same
US10164125B2 (en) 2011-10-17 2018-12-25 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit
US10593814B2 (en) 2011-10-17 2020-03-17 Rohm Co., Ltd. Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit

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