SE7903441L - OVERVOLTAGE PROTECTION FOR SEMICONDUCTOR DEVICES - Google Patents
OVERVOLTAGE PROTECTION FOR SEMICONDUCTOR DEVICESInfo
- Publication number
- SE7903441L SE7903441L SE7903441A SE7903441A SE7903441L SE 7903441 L SE7903441 L SE 7903441L SE 7903441 A SE7903441 A SE 7903441A SE 7903441 A SE7903441 A SE 7903441A SE 7903441 L SE7903441 L SE 7903441L
- Authority
- SE
- Sweden
- Prior art keywords
- region
- type
- resistivity
- layer
- junction
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
A transistor protected against overvoltages comprises, a first low resistivity P type layer (2), a second high resistivity P type layer (4), and a third high resistivity N type layer (6) forming a first PN junction therewith. In the third layer (6) are formed a first low resistivity N type region (8), a second low resistivity P type region (10) defining a second PN junction, and a third low resistivity P type region (12) defining a third PN junction therewith. Metal layers forming collector (20), base (16) and emitter (18) terminals ohmically contact the first layer, first region and second region respectively as shown. The resistivity of the second and third layers (4, 6) and the distances between the first and second and first and third PN junctions are such that in operation, the base depletion region may reach the third junction but not the second. In a variant emitter region (10) is wholly within region (8) which is deeper and is apertured to accommodate a shallower third region (12). The conductivity types of the regions may be reversed. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22499/78A IT1094080B (en) | 1978-04-20 | 1978-04-20 | SEMICONDUCTOR PROTECTED DEVICE AGAINST OVERVOLTAGE |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7903441L true SE7903441L (en) | 1979-10-21 |
Family
ID=11197088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7903441A SE7903441L (en) | 1978-04-20 | 1979-04-19 | OVERVOLTAGE PROTECTION FOR SEMICONDUCTOR DEVICES |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS54158877A (en) |
DE (1) | DE2915918A1 (en) |
FR (1) | FR2423867A1 (en) |
GB (1) | GB2019645A (en) |
IT (1) | IT1094080B (en) |
SE (1) | SE7903441L (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100467A (en) * | 1980-01-14 | 1981-08-12 | Nec Corp | Protecting device against electrostatic destruction |
JPS59181679A (en) * | 1983-03-31 | 1984-10-16 | Nippon Denso Co Ltd | Semiconductor device |
IT1221867B (en) * | 1983-05-16 | 1990-07-12 | Ates Componenti Elettron | STRUCTURE OF BIPOLAR POWER TRANSISTOR WITH BASIC INCORPORATED BY-PASSABLE BALANCING RESISTANCE |
JPS6159773A (en) * | 1984-08-30 | 1986-03-27 | Fujitsu Ltd | Semiconductor integrated circuit device |
US4689651A (en) * | 1985-07-29 | 1987-08-25 | Motorola, Inc. | Low voltage clamp |
JPH0666402B2 (en) * | 1985-12-12 | 1994-08-24 | 三菱電機株式会社 | Input protection circuit for semiconductor integrated circuit device |
EP0443055A1 (en) * | 1990-02-20 | 1991-08-28 | Siemens Aktiengesellschaft | Input protection structure for integrated circuits |
EP0477429A1 (en) * | 1990-09-28 | 1992-04-01 | Siemens Aktiengesellschaft | Input protection structure for integrated circuits |
-
1978
- 1978-04-20 IT IT22499/78A patent/IT1094080B/en active
-
1979
- 1979-04-19 DE DE19792915918 patent/DE2915918A1/en not_active Withdrawn
- 1979-04-19 SE SE7903441A patent/SE7903441L/en not_active Application Discontinuation
- 1979-04-20 FR FR7909997A patent/FR2423867A1/en not_active Withdrawn
- 1979-04-20 GB GB7913769A patent/GB2019645A/en not_active Withdrawn
- 1979-04-20 JP JP4809779A patent/JPS54158877A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
IT7822499A0 (en) | 1978-04-20 |
IT1094080B (en) | 1985-07-26 |
JPS54158877A (en) | 1979-12-15 |
FR2423867A1 (en) | 1979-11-16 |
DE2915918A1 (en) | 1979-10-31 |
GB2019645A (en) | 1979-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
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