SE7903441L - OVERVOLTAGE PROTECTION FOR SEMICONDUCTOR DEVICES - Google Patents

OVERVOLTAGE PROTECTION FOR SEMICONDUCTOR DEVICES

Info

Publication number
SE7903441L
SE7903441L SE7903441A SE7903441A SE7903441L SE 7903441 L SE7903441 L SE 7903441L SE 7903441 A SE7903441 A SE 7903441A SE 7903441 A SE7903441 A SE 7903441A SE 7903441 L SE7903441 L SE 7903441L
Authority
SE
Sweden
Prior art keywords
region
type
resistivity
layer
junction
Prior art date
Application number
SE7903441A
Other languages
Unknown language ( )
Swedish (sv)
Inventor
G Bordicchia
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE7903441L publication Critical patent/SE7903441L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

A transistor protected against overvoltages comprises, a first low resistivity P type layer (2), a second high resistivity P type layer (4), and a third high resistivity N type layer (6) forming a first PN junction therewith. In the third layer (6) are formed a first low resistivity N type region (8), a second low resistivity P type region (10) defining a second PN junction, and a third low resistivity P type region (12) defining a third PN junction therewith. Metal layers forming collector (20), base (16) and emitter (18) terminals ohmically contact the first layer, first region and second region respectively as shown. The resistivity of the second and third layers (4, 6) and the distances between the first and second and first and third PN junctions are such that in operation, the base depletion region may reach the third junction but not the second. In a variant emitter region (10) is wholly within region (8) which is deeper and is apertured to accommodate a shallower third region (12). The conductivity types of the regions may be reversed. <IMAGE>
SE7903441A 1978-04-20 1979-04-19 OVERVOLTAGE PROTECTION FOR SEMICONDUCTOR DEVICES SE7903441L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22499/78A IT1094080B (en) 1978-04-20 1978-04-20 SEMICONDUCTOR PROTECTED DEVICE AGAINST OVERVOLTAGE

Publications (1)

Publication Number Publication Date
SE7903441L true SE7903441L (en) 1979-10-21

Family

ID=11197088

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7903441A SE7903441L (en) 1978-04-20 1979-04-19 OVERVOLTAGE PROTECTION FOR SEMICONDUCTOR DEVICES

Country Status (6)

Country Link
JP (1) JPS54158877A (en)
DE (1) DE2915918A1 (en)
FR (1) FR2423867A1 (en)
GB (1) GB2019645A (en)
IT (1) IT1094080B (en)
SE (1) SE7903441L (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100467A (en) * 1980-01-14 1981-08-12 Nec Corp Protecting device against electrostatic destruction
JPS59181679A (en) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd Semiconductor device
IT1221867B (en) * 1983-05-16 1990-07-12 Ates Componenti Elettron STRUCTURE OF BIPOLAR POWER TRANSISTOR WITH BASIC INCORPORATED BY-PASSABLE BALANCING RESISTANCE
JPS6159773A (en) * 1984-08-30 1986-03-27 Fujitsu Ltd Semiconductor integrated circuit device
US4689651A (en) * 1985-07-29 1987-08-25 Motorola, Inc. Low voltage clamp
JPH0666402B2 (en) * 1985-12-12 1994-08-24 三菱電機株式会社 Input protection circuit for semiconductor integrated circuit device
EP0443055A1 (en) * 1990-02-20 1991-08-28 Siemens Aktiengesellschaft Input protection structure for integrated circuits
EP0477429A1 (en) * 1990-09-28 1992-04-01 Siemens Aktiengesellschaft Input protection structure for integrated circuits

Also Published As

Publication number Publication date
IT7822499A0 (en) 1978-04-20
IT1094080B (en) 1985-07-26
JPS54158877A (en) 1979-12-15
FR2423867A1 (en) 1979-11-16
DE2915918A1 (en) 1979-10-31
GB2019645A (en) 1979-10-31

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