KR900005595A - 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드 - Google Patents

역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드

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Publication number
KR900005595A
KR900005595A KR1019890013173A KR890013173A KR900005595A KR 900005595 A KR900005595 A KR 900005595A KR 1019890013173 A KR1019890013173 A KR 1019890013173A KR 890013173 A KR890013173 A KR 890013173A KR 900005595 A KR900005595 A KR 900005595A
Authority
KR
South Korea
Prior art keywords
mos transistor
diode
well
gate
voltage
Prior art date
Application number
KR1019890013173A
Other languages
English (en)
Inventor
파브랭 앙또안느
Original Assignee
에스지에스-톰슨 마이크로일렉트로닉스 에스.에이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에스지에스-톰슨 마이크로일렉트로닉스 에스.에이. filed Critical 에스지에스-톰슨 마이크로일렉트로닉스 에스.에이.
Publication of KR900005595A publication Critical patent/KR900005595A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전원스위칭부 및 피보호 논리회로부로 구성된 전기회로선도.
제2도는 전원부를 버어티컬 확산형파워 MOS 트랜지스터(VDMOS)용 셀의 형태로 그리고 논리회로부를 MOS 트랜지스터로 나타낸 개략도.
제3도는 논리회로부에 집적된 보호장치를 실현하는 제 1 방법을 보인 구조의 단면도.
제4도는 보호장치가 높은 회로부에 집적된 본 발명의 구조에 대한 단면도.

Claims (3)

  1. 논리회로부가, 버어티컬 MOS형 트랜지스터의 논리회로부 및 전원부로 구성되며 공급전원에 연결된 모놀리딕구조에 집적되어 있는 한편 제 2 도전형의 기판(60)에 형성된 제 1 도전형의 우물(61)에 배치된 종래의 MOS트랜지스터(TL-1)로 구성되어 있으며, 상기 기판(60)의 배면이 버어티컬 MOS 트랜지스터의 드레인에 해당되고, 상기 우물(64)이 상부표면(69)을 구성하며 보호활성 다이오드가 이 우물(64)에 실현된 논리회로부의 역전압에 대한 보호활성 다이오드에 있어서, -게이트가 공급전압극성을 나타내는 전압으로 제어되고 드레인영역 (67)이 접지된 MOS 트랜지스터와, -상기 MOS 트랜지스터의 소오스(66)에 연결되고, 상기 우물(64)의 상부표면(69)으로부터 신장되는 제 1 도전형의 높게 도핑된 디프영역 (71)으로 구성된 것을 특징으로 하는 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드
  2. 제1항에 있어서, 상기 MOS 트랜지스터가 저항(102)에 연결된 게이트 및 상기 게이트와 버어티컬 MOS트랜지스터의 드레인에 연결된 단자(104)사이에 병렬로 연결된 다이오드(103)를 구비함을 특징으로 하는 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드
  3. 제1항 또는 제2항에 있어서, 제너 다이오드(101)가 MOS 트랜지스터의 게이트와 소오스 사이에 연결된 것을 특징으로 하는 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890013173A 1988-09-14 1989-09-11 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드 KR900005595A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR88-12297 1988-09-14
FR8812297A FR2636481B1 (fr) 1988-09-14 1988-09-14 Diode active integrable

Publications (1)

Publication Number Publication Date
KR900005595A true KR900005595A (ko) 1990-04-14

Family

ID=9370200

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890013173A KR900005595A (ko) 1988-09-14 1989-09-11 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드

Country Status (6)

Country Link
US (1) US5099302A (ko)
EP (1) EP0359680B1 (ko)
JP (1) JP2928285B2 (ko)
KR (1) KR900005595A (ko)
DE (1) DE68911809T2 (ko)
FR (1) FR2636481B1 (ko)

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US5229635A (en) * 1991-08-21 1993-07-20 Vlsi Technology, Inc. ESD protection circuit and method for power-down application
DE69426565T2 (de) * 1994-09-21 2001-05-31 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Schaltung zur Verhinderung des Durchschaltens von parasitären Bauelementen in integrierten Schaltungen bestehend aus einer Leistungsstufe un einer Niederspannungssteuerschaltung
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
FR2764137B1 (fr) * 1997-05-28 1999-08-13 Sgs Thomson Microelectronics Composant de protection d'un transistor mos integre contre des gradients de tension
FR2764735B1 (fr) * 1997-06-17 1999-08-27 Sgs Thomson Microelectronics Protection du caisson logique d'un composant incluant un transistor mos de puissance integre
US6781804B1 (en) 1997-06-17 2004-08-24 Sgs-Thomson Microelectronics S.A. Protection of the logic well of a component including an integrated MOS power transistor
JP3457539B2 (ja) * 1998-07-15 2003-10-20 株式会社東芝 半導体装置
US6678829B1 (en) * 2000-06-19 2004-01-13 Texas Instruments Incorporated System and method of regulating the distribution of power throughout a system through the use of uni-directional and bi-directional switches
KR100773537B1 (ko) * 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
KR101051704B1 (ko) * 2004-04-28 2011-07-25 삼성전자주식회사 저항 구배를 지닌 다층막을 이용한 메모리 소자
KR100682926B1 (ko) * 2005-01-31 2007-02-15 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 소자 및 그 제조방법
US7748542B2 (en) * 2005-08-31 2010-07-06 Applied Materials, Inc. Batch deposition tool and compressed boat
US8354871B2 (en) * 2009-11-09 2013-01-15 University Of Florida Research Foundation, Inc. Self-powered comparator
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JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS60217658A (ja) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp 半導体集積回路装置の入力保護回路
FR2594596B1 (fr) * 1986-02-18 1988-08-26 Thomson Csf Structure semiconductrice associant un ou plusieurs transistors de puissance et leur logique de commande et de protection
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Also Published As

Publication number Publication date
DE68911809D1 (de) 1994-02-10
EP0359680A1 (fr) 1990-03-21
FR2636481A1 (fr) 1990-03-16
JPH02275674A (ja) 1990-11-09
US5099302A (en) 1992-03-24
FR2636481B1 (fr) 1990-11-30
DE68911809T2 (de) 1994-08-04
JP2928285B2 (ja) 1999-08-03
EP0359680B1 (fr) 1993-12-29

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