KR900005595A - 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드 - Google Patents
역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드Info
- Publication number
- KR900005595A KR900005595A KR1019890013173A KR890013173A KR900005595A KR 900005595 A KR900005595 A KR 900005595A KR 1019890013173 A KR1019890013173 A KR 1019890013173A KR 890013173 A KR890013173 A KR 890013173A KR 900005595 A KR900005595 A KR 900005595A
- Authority
- KR
- South Korea
- Prior art keywords
- mos transistor
- diode
- well
- gate
- voltage
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전원스위칭부 및 피보호 논리회로부로 구성된 전기회로선도.
제2도는 전원부를 버어티컬 확산형파워 MOS 트랜지스터(VDMOS)용 셀의 형태로 그리고 논리회로부를 MOS 트랜지스터로 나타낸 개략도.
제3도는 논리회로부에 집적된 보호장치를 실현하는 제 1 방법을 보인 구조의 단면도.
제4도는 보호장치가 높은 회로부에 집적된 본 발명의 구조에 대한 단면도.
Claims (3)
- 논리회로부가, 버어티컬 MOS형 트랜지스터의 논리회로부 및 전원부로 구성되며 공급전원에 연결된 모놀리딕구조에 집적되어 있는 한편 제 2 도전형의 기판(60)에 형성된 제 1 도전형의 우물(61)에 배치된 종래의 MOS트랜지스터(TL-1)로 구성되어 있으며, 상기 기판(60)의 배면이 버어티컬 MOS 트랜지스터의 드레인에 해당되고, 상기 우물(64)이 상부표면(69)을 구성하며 보호활성 다이오드가 이 우물(64)에 실현된 논리회로부의 역전압에 대한 보호활성 다이오드에 있어서, -게이트가 공급전압극성을 나타내는 전압으로 제어되고 드레인영역 (67)이 접지된 MOS 트랜지스터와, -상기 MOS 트랜지스터의 소오스(66)에 연결되고, 상기 우물(64)의 상부표면(69)으로부터 신장되는 제 1 도전형의 높게 도핑된 디프영역 (71)으로 구성된 것을 특징으로 하는 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드
- 제1항에 있어서, 상기 MOS 트랜지스터가 저항(102)에 연결된 게이트 및 상기 게이트와 버어티컬 MOS트랜지스터의 드레인에 연결된 단자(104)사이에 병렬로 연결된 다이오드(103)를 구비함을 특징으로 하는 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드
- 제1항 또는 제2항에 있어서, 제너 다이오드(101)가 MOS 트랜지스터의 게이트와 소오스 사이에 연결된 것을 특징으로 하는 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR88-12297 | 1988-09-14 | ||
FR8812297A FR2636481B1 (fr) | 1988-09-14 | 1988-09-14 | Diode active integrable |
Publications (1)
Publication Number | Publication Date |
---|---|
KR900005595A true KR900005595A (ko) | 1990-04-14 |
Family
ID=9370200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890013173A KR900005595A (ko) | 1988-09-14 | 1989-09-11 | 역전압으로부터 모놀리딕 구조를 보호하는 활성 다이오드 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5099302A (ko) |
EP (1) | EP0359680B1 (ko) |
JP (1) | JP2928285B2 (ko) |
KR (1) | KR900005595A (ko) |
DE (1) | DE68911809T2 (ko) |
FR (1) | FR2636481B1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212618A (en) * | 1990-05-03 | 1993-05-18 | Linear Technology Corporation | Electrostatic discharge clamp using vertical NPN transistor |
US5229635A (en) * | 1991-08-21 | 1993-07-20 | Vlsi Technology, Inc. | ESD protection circuit and method for power-down application |
DE69426565T2 (de) * | 1994-09-21 | 2001-05-31 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Schaltung zur Verhinderung des Durchschaltens von parasitären Bauelementen in integrierten Schaltungen bestehend aus einer Leistungsstufe un einer Niederspannungssteuerschaltung |
US5578860A (en) * | 1995-05-01 | 1996-11-26 | Motorola, Inc. | Monolithic high frequency integrated circuit structure having a grounded source configuration |
FR2764137B1 (fr) * | 1997-05-28 | 1999-08-13 | Sgs Thomson Microelectronics | Composant de protection d'un transistor mos integre contre des gradients de tension |
FR2764735B1 (fr) * | 1997-06-17 | 1999-08-27 | Sgs Thomson Microelectronics | Protection du caisson logique d'un composant incluant un transistor mos de puissance integre |
US6781804B1 (en) | 1997-06-17 | 2004-08-24 | Sgs-Thomson Microelectronics S.A. | Protection of the logic well of a component including an integrated MOS power transistor |
JP3457539B2 (ja) * | 1998-07-15 | 2003-10-20 | 株式会社東芝 | 半導体装置 |
US6678829B1 (en) * | 2000-06-19 | 2004-01-13 | Texas Instruments Incorporated | System and method of regulating the distribution of power throughout a system through the use of uni-directional and bi-directional switches |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
KR101051704B1 (ko) * | 2004-04-28 | 2011-07-25 | 삼성전자주식회사 | 저항 구배를 지닌 다층막을 이용한 메모리 소자 |
KR100682926B1 (ko) * | 2005-01-31 | 2007-02-15 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 소자 및 그 제조방법 |
US7748542B2 (en) * | 2005-08-31 | 2010-07-06 | Applied Materials, Inc. | Batch deposition tool and compressed boat |
US8354871B2 (en) * | 2009-11-09 | 2013-01-15 | University Of Florida Research Foundation, Inc. | Self-powered comparator |
WO2011139975A2 (en) | 2010-05-07 | 2011-11-10 | Xandex, Inc. | Hybrid rectifier |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3940785A (en) * | 1974-05-06 | 1976-02-24 | Sprague Electric Company | Semiconductor I.C. with protection against reversed power supply |
US4066918A (en) * | 1976-09-30 | 1978-01-03 | Rca Corporation | Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits |
US4303958A (en) * | 1979-06-18 | 1981-12-01 | Motorola Inc. | Reverse battery protection |
JPS5737876A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Semiconductor integrated circuit apparatus |
JPS60217658A (ja) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | 半導体集積回路装置の入力保護回路 |
FR2594596B1 (fr) * | 1986-02-18 | 1988-08-26 | Thomson Csf | Structure semiconductrice associant un ou plusieurs transistors de puissance et leur logique de commande et de protection |
JPS632370A (ja) * | 1986-06-23 | 1988-01-07 | Nissan Motor Co Ltd | 半導体装置 |
US4857985A (en) * | 1987-08-31 | 1989-08-15 | National Semiconductor Corporation | MOS IC reverse battery protection |
-
1988
- 1988-09-14 FR FR8812297A patent/FR2636481B1/fr not_active Expired - Lifetime
-
1989
- 1989-09-11 EP EP89420332A patent/EP0359680B1/fr not_active Expired - Lifetime
- 1989-09-11 KR KR1019890013173A patent/KR900005595A/ko not_active Application Discontinuation
- 1989-09-11 DE DE68911809T patent/DE68911809T2/de not_active Expired - Fee Related
- 1989-09-13 JP JP1238362A patent/JP2928285B2/ja not_active Expired - Fee Related
-
1990
- 1990-12-20 US US07/630,742 patent/US5099302A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE68911809D1 (de) | 1994-02-10 |
EP0359680A1 (fr) | 1990-03-21 |
FR2636481A1 (fr) | 1990-03-16 |
JPH02275674A (ja) | 1990-11-09 |
US5099302A (en) | 1992-03-24 |
FR2636481B1 (fr) | 1990-11-30 |
DE68911809T2 (de) | 1994-08-04 |
JP2928285B2 (ja) | 1999-08-03 |
EP0359680B1 (fr) | 1993-12-29 |
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Legal Events
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |