KR880011937A - 과전압 보호용 집적회로 - Google Patents

과전압 보호용 집적회로 Download PDF

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Publication number
KR880011937A
KR880011937A KR1019880003327A KR880003327A KR880011937A KR 880011937 A KR880011937 A KR 880011937A KR 1019880003327 A KR1019880003327 A KR 1019880003327A KR 880003327 A KR880003327 A KR 880003327A KR 880011937 A KR880011937 A KR 880011937A
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KR
South Korea
Prior art keywords
terminal
substrate
integrated circuit
type
diode
Prior art date
Application number
KR1019880003327A
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English (en)
Inventor
클로드 르누
Original Assignee
왈장-클로드
에스지에스-톰슨 마이크로일렉트로닉스 에스.에이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 왈장-클로드, 에스지에스-톰슨 마이크로일렉트로닉스 에스.에이. filed Critical 왈장-클로드
Publication of KR880011937A publication Critical patent/KR880011937A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

내용없음

Description

과전압 보호용 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 보호원리의 설명을 위한 회로도.
제4도는 본 발명에 의하여 보호를 실행하는 집적회로의 단면도.

Claims (3)

  1. 하나의 도전형태를 갖는 반도체기판(10)의 상부를 그와 반대되는 도전형태의 에피택실층(12)으로 피복시켜서된 반도체기판(10)상에 형성되고, 적어도 한 개의 외부전압 공급단자(D)와 공급전압을 회로의 여러부품에 전달하기 위한 내부공급단자( CA) 및 과전압을 수용할 수 있는 적어도 하나의 출력단자(A)로 구성된 집적회로 있어서, 상기 기판과 상기 외부전압 공급단자(D)간에 접속되고 기판이 P형인 경우 그의 캐소드는 상기한 단자에 접속되게 한 제1다이오드(D1)와, 상기 내부공급도체(CA)와 출력공급단자(D)간에 접속되고 기판이 P형인 경우 그의 캐소드는 상기 단자에 접속되게한 제2다이오드(D2) 및, -상기 내부공급도체(CA)와 출력단자(A)간에 접속되고 기판이 P형인 경우 상기 단자에 접속되는 캐소드를 구비하며, 각기 기판으로부터 전기적으로 절연되고 서로 상반된 도전형태를 갖는 두 개의 영역(44,48)간의 접합에 의하여 기능이 부여되는 제3다이오드(D3)로 구성되는 것을 특징으로 하는 과전입 보호용 집적회로.
  2. 제1항에 있어서, 상기 제2다이오드(D3)는 n형 박스(42)내에 형성되는 P형 애노드 영역(48)으로 구성됨을 특징으로 하는 과전압 보호용 집적회로.
  3. 제1항에 있어서, 상기 제1 및 제2다이오드(D1및 D2)는 기판으로부터 전기적으로 절연된 영역들간의 접합에 의하여 기능이 부여됨을 특징으로 하는 과전압 보호용 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003327A 1987-03-27 1988-03-26 과전압 보호용 집적회로 KR880011937A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR87/04270 1987-03-27
FR8704270A FR2613131B1 (fr) 1987-03-27 1987-03-27 Circuit integre protege contre des surtensions

Publications (1)

Publication Number Publication Date
KR880011937A true KR880011937A (ko) 1988-10-31

Family

ID=9349487

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880003327A KR880011937A (ko) 1987-03-27 1988-03-26 과전압 보호용 집적회로

Country Status (6)

Country Link
US (1) US4847724A (ko)
EP (1) EP0289431B1 (ko)
JP (1) JPS63261740A (ko)
KR (1) KR880011937A (ko)
DE (1) DE3878975T2 (ko)
FR (1) FR2613131B1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1215402B (it) * 1987-03-31 1990-02-08 Sgs Microelettronica Spa Circuito integrato di pilotaggio di carichi induttivi riferiti a terra.
DE58906972D1 (de) * 1988-08-16 1994-03-24 Siemens Ag Bipolartransistor als Schutzelement für integrierte Schaltungen.
KR960015347B1 (ko) * 1990-09-10 1996-11-09 후지쓰 가부시끼가이샤 반도체장치
US5057879A (en) * 1990-12-24 1991-10-15 Motorola Inc. Noise reduction technique for breakdown diodes
GB2256744A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A monolithic semiconductor component for transient voltage suppression
GB2256743A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A semiconductor component for transient voltage limiting
JP2910474B2 (ja) * 1992-02-21 1999-06-23 日本電気株式会社 半導体集積回路装置
JP3075892B2 (ja) * 1993-07-09 2000-08-14 株式会社東芝 半導体装置
FR2719721B1 (fr) * 1994-05-09 1996-09-20 Sgs Thomson Microelectronics Protection d'interface de lignes téléphoniques.
US5802170A (en) * 1994-05-19 1998-09-01 Tii Industries, Inc. Customer bridge module
FR2734113B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection complet de circuit d'interface de lignes d'abonnes
FR2734114B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection sensible de circuit d'interface de lignes d'abonnes
IT1296832B1 (it) * 1997-12-02 1999-08-02 Sgs Thomson Microelectronics Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione
US6222237B1 (en) * 1999-05-21 2001-04-24 United Microelectronics Corp. Structure of electrostatic discharge protection device
JP2003078032A (ja) * 2001-09-05 2003-03-14 Mitsubishi Electric Corp 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2217810A1 (ko) * 1973-02-15 1974-09-06 Motorola Inc
GB1434332A (en) * 1973-02-15 1976-05-05 Motorola Inc Integrated circuit filtering circuit
US4005342A (en) * 1973-02-15 1977-01-25 Motorola, Inc. Integrated circuit overvoltage protection circuit
US3858062A (en) * 1973-02-15 1974-12-31 Motorola Inc Solid state current divider
DE2514466B2 (de) * 1975-04-03 1977-04-21 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte halbleiterschaltung
US4661979A (en) * 1985-09-24 1987-04-28 Northern Telecom Limited Fault protection for integrated subscriber line interface circuits

Also Published As

Publication number Publication date
EP0289431A1 (fr) 1988-11-02
JPS63261740A (ja) 1988-10-28
FR2613131B1 (fr) 1989-07-28
DE3878975D1 (de) 1993-04-15
EP0289431B1 (fr) 1993-03-10
US4847724A (en) 1989-07-11
DE3878975T2 (de) 1993-10-14
FR2613131A1 (fr) 1988-09-30

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