IT1296832B1 - Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione - Google Patents
Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazioneInfo
- Publication number
- IT1296832B1 IT1296832B1 IT97MI002675A ITMI972675A IT1296832B1 IT 1296832 B1 IT1296832 B1 IT 1296832B1 IT 97MI002675 A IT97MI002675 A IT 97MI002675A IT MI972675 A ITMI972675 A IT MI972675A IT 1296832 B1 IT1296832 B1 IT 1296832B1
- Authority
- IT
- Italy
- Prior art keywords
- protection structure
- reverse conduction
- integrated protection
- conduction threshold
- threshold devices
- Prior art date
Links
- 230000010287 polarization Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT97MI002675A IT1296832B1 (it) | 1997-12-02 | 1997-12-02 | Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione |
US09/195,912 US6057578A (en) | 1997-12-02 | 1998-11-19 | Protective integrated structure with biasing devices having a predetermined reverse conduction threshold |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT97MI002675A IT1296832B1 (it) | 1997-12-02 | 1997-12-02 | Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI972675A1 ITMI972675A1 (it) | 1999-06-02 |
IT1296832B1 true IT1296832B1 (it) | 1999-08-02 |
Family
ID=11378305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT97MI002675A IT1296832B1 (it) | 1997-12-02 | 1997-12-02 | Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione |
Country Status (2)
Country | Link |
---|---|
US (1) | US6057578A (it) |
IT (1) | IT1296832B1 (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4610786B2 (ja) * | 2001-02-20 | 2011-01-12 | 三菱電機株式会社 | 半導体装置 |
US6586317B1 (en) * | 2001-05-08 | 2003-07-01 | National Semiconductor Corporation | Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage |
US6417544B1 (en) | 2001-06-11 | 2002-07-09 | Chartered Semiconductor Manufacturing Ltd. | Diode-like plasma induced damage protection structure |
US10192863B2 (en) * | 2014-03-21 | 2019-01-29 | Texas Instruments Incorporated | Series connected ESD protection circuit |
JP7279394B2 (ja) * | 2019-02-15 | 2023-05-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5414689A (en) * | 1977-07-06 | 1979-02-03 | Hitachi Ltd | Constant-voltage diode |
JPS5676560A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor device |
US4405933A (en) * | 1981-02-04 | 1983-09-20 | Rca Corporation | Protective integrated circuit device utilizing back-to-back zener diodes |
JPS5948951A (ja) * | 1982-09-14 | 1984-03-21 | Toshiba Corp | 半導体保護装置 |
US4633283A (en) * | 1985-03-11 | 1986-12-30 | Rca Corporation | Circuit and structure for protecting integrated circuits from destructive transient voltages |
FR2613131B1 (fr) * | 1987-03-27 | 1989-07-28 | Thomson Csf | Circuit integre protege contre des surtensions |
FR2624655B1 (fr) * | 1987-12-14 | 1990-05-11 | Sgs Thomson Microelectronics | Structure de protection d'un acces a un circuit integre |
US5066613A (en) * | 1989-07-13 | 1991-11-19 | The United States Of America As Represented By The Secretary Of The Navy | Process for making semiconductor-on-insulator device interconnects |
DE69029180T2 (de) * | 1989-08-30 | 1997-05-22 | Siliconix Inc | Transistor mit Spannungsbegrenzungsanordnung |
KR960015347B1 (ko) * | 1990-09-10 | 1996-11-09 | 후지쓰 가부시끼가이샤 | 반도체장치 |
EP0622849B1 (en) * | 1993-04-28 | 1999-09-22 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | A monolithic integrated structure of an electronic device having a predetermined unidirectional conduction threshold |
DE69327320T2 (de) * | 1993-09-30 | 2000-05-31 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung |
JPH0837284A (ja) * | 1994-07-21 | 1996-02-06 | Nippondenso Co Ltd | 半導体集積回路装置 |
JP4278721B2 (ja) * | 1994-09-30 | 2009-06-17 | テキサス インスツルメンツ インコーポレイテツド | 高い逆降伏電圧を有するツェナーダイオード |
JP2882291B2 (ja) * | 1994-10-31 | 1999-04-12 | 関西日本電気株式会社 | 高耐圧ダイオード及びその製造方法 |
US5536958A (en) * | 1995-05-02 | 1996-07-16 | Motorola, Inc. | Semiconductor device having high voltage protection capability |
-
1997
- 1997-12-02 IT IT97MI002675A patent/IT1296832B1/it active IP Right Grant
-
1998
- 1998-11-19 US US09/195,912 patent/US6057578A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6057578A (en) | 2000-05-02 |
ITMI972675A1 (it) | 1999-06-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |