KR840002584A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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KR840002584A
KR840002584A KR1019820005344A KR820005344A KR840002584A KR 840002584 A KR840002584 A KR 840002584A KR 1019820005344 A KR1019820005344 A KR 1019820005344A KR 820005344 A KR820005344 A KR 820005344A KR 840002584 A KR840002584 A KR 840002584A
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semiconductor device
semiconductor
region
semiconductor region
layer
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KR1019820005344A
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기요가쯔 나가가와
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미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Publication of KR840002584A publication Critical patent/KR840002584A/ko

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66454—Static induction transistors [SIT], e.g. permeable base transistors [PBT]
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 적용한 쇼트키이 케이트(schottky gate) FET의 예를 도시한 사시도.
제2도 a∼제2도 e는 그의 제조 공정을 표시하는 단면도.

Claims (9)

  1. 절연성 기판위에 헤테로 에피택스 성장을 시킨 금속적 전기 전도성을 갖는 재료층과 그 위에 다시 헤테로 에피택스 성장을 시킨 최소한 하나의 반도체층 영역을 갖고 있으며 이 반도체 영역을 소재로 하여 능동영역이 형성되고 상기 금속적 전도성을 갖는 물질층을 상기 반도체 장치의 하나의 전극으로 한것을 특징으로 하는 반도체 장치.
  2. 상기의 절연성 기판은 사파이어 또는 스피넬로 된 기판이고 상기 금속적 전도성을 갖는 재료층이 천이 금속의 실리사이드로된 층이며, 상기 반도체 영역이 실리콘으로된 층인 것을 특징으로 하는 특허 청구 범위 1의 반도체 장치.
  3. 상기의 절연성 기판은 고저항의 AgAs 결정이고, 상기 금속적 전도성을 갖는 금속층은 Al이며, 상기 반도체 영역으로서는 GaAs 또는 GaAlAs인 것을 특징으로 하는 특허 청구 범위 1의 반도체 장치.
  4. 상기의 반도체 영역이 pnp(혹은 npn) 또는 pinp(혹은 nipn)의 구조를 최소한 갖고 있으며, 바아퍼울러트랜지스터가 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허청구범위 2 혹은 특히 청구 범위 3의 반도체 장치.
  5. 상기의 반도체 영역이 pin 또는 pnin(혹은 npin)구조를 최소한 갖고 있으며 다이오드가 구성되는 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 3의 반도체 장치.
  6. 상기의 반도체 영역이 pnpn 구조를 최소한 갖고 있으며, 스윗칭 장치가 구성되는 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
  7. 상기의 반도체 영역에 스태틱 인덕션 트랜지스터가 최소한 구성된 특허 청구 범위 l과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
  8. 상기의 반도체 영역에 접합형 전개효과 트랜지스터가 최소한 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
  9. 상기의 반도체 영역에 퍼미어블 베이스 트랜지스터가 최소한 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019820005344A 1981-11-27 1982-11-26 반도체 장치 KR840002584A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56-189350 1981-11-27
JP56189350A JPS5891631A (ja) 1981-11-27 1981-11-27 半導体装置

Publications (1)

Publication Number Publication Date
KR840002584A true KR840002584A (ko) 1984-07-02

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KR1019820005344A KR840002584A (ko) 1981-11-27 1982-11-26 반도체 장치

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EP (1) EP0082325B1 (ko)
JP (1) JPS5891631A (ko)
KR (1) KR840002584A (ko)
CA (1) CA1189983A (ko)
DE (1) DE3279167D1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235519A (ja) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol 埋め込み電極の接続方法
CN103000674B (zh) * 2012-12-14 2017-04-12 复旦大学 一种晶体管及其制造方法
WO2014089813A1 (zh) * 2012-12-14 2014-06-19 复旦大学 一种晶体管及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE354098B (ko) * 1971-07-05 1973-02-26 Svenska Electromagneter
US3929527A (en) * 1974-06-11 1975-12-30 Us Army Molecular beam epitaxy of alternating metal-semiconductor films
US4169746A (en) * 1977-04-28 1979-10-02 Rca Corp. Method for making silicon on sapphire transistor utilizing predeposition of leads

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Publication number Publication date
CA1189983A (en) 1985-07-02
DE3279167D1 (en) 1988-12-01
EP0082325A3 (en) 1984-12-05
EP0082325A2 (en) 1983-06-29
EP0082325B1 (en) 1988-10-26
JPS5891631A (ja) 1983-05-31

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