KR840002584A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR840002584A
KR840002584A KR1019820005344A KR820005344A KR840002584A KR 840002584 A KR840002584 A KR 840002584A KR 1019820005344 A KR1019820005344 A KR 1019820005344A KR 820005344 A KR820005344 A KR 820005344A KR 840002584 A KR840002584 A KR 840002584A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
region
semiconductor region
layer
Prior art date
Application number
KR1019820005344A
Other languages
English (en)
Inventor
기요가쯔 나가가와
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840002584A publication Critical patent/KR840002584A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66416—Static induction transistors [SIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66454—Static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 적용한 쇼트키이 케이트(schottky gate) FET의 예를 도시한 사시도.
제2도 a∼제2도 e는 그의 제조 공정을 표시하는 단면도.

Claims (9)

  1. 절연성 기판위에 헤테로 에피택스 성장을 시킨 금속적 전기 전도성을 갖는 재료층과 그 위에 다시 헤테로 에피택스 성장을 시킨 최소한 하나의 반도체층 영역을 갖고 있으며 이 반도체 영역을 소재로 하여 능동영역이 형성되고 상기 금속적 전도성을 갖는 물질층을 상기 반도체 장치의 하나의 전극으로 한것을 특징으로 하는 반도체 장치.
  2. 상기의 절연성 기판은 사파이어 또는 스피넬로 된 기판이고 상기 금속적 전도성을 갖는 재료층이 천이 금속의 실리사이드로된 층이며, 상기 반도체 영역이 실리콘으로된 층인 것을 특징으로 하는 특허 청구 범위 1의 반도체 장치.
  3. 상기의 절연성 기판은 고저항의 AgAs 결정이고, 상기 금속적 전도성을 갖는 금속층은 Al이며, 상기 반도체 영역으로서는 GaAs 또는 GaAlAs인 것을 특징으로 하는 특허 청구 범위 1의 반도체 장치.
  4. 상기의 반도체 영역이 pnp(혹은 npn) 또는 pinp(혹은 nipn)의 구조를 최소한 갖고 있으며, 바아퍼울러트랜지스터가 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허청구범위 2 혹은 특히 청구 범위 3의 반도체 장치.
  5. 상기의 반도체 영역이 pin 또는 pnin(혹은 npin)구조를 최소한 갖고 있으며 다이오드가 구성되는 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 3의 반도체 장치.
  6. 상기의 반도체 영역이 pnpn 구조를 최소한 갖고 있으며, 스윗칭 장치가 구성되는 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
  7. 상기의 반도체 영역에 스태틱 인덕션 트랜지스터가 최소한 구성된 특허 청구 범위 l과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
  8. 상기의 반도체 영역에 접합형 전개효과 트랜지스터가 최소한 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
  9. 상기의 반도체 영역에 퍼미어블 베이스 트랜지스터가 최소한 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019820005344A 1981-11-27 1982-11-26 반도체 장치 KR840002584A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56189350A JPS5891631A (ja) 1981-11-27 1981-11-27 半導体装置
JP56-189350 1981-11-27

Publications (1)

Publication Number Publication Date
KR840002584A true KR840002584A (ko) 1984-07-02

Family

ID=16239854

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019820005344A KR840002584A (ko) 1981-11-27 1982-11-26 반도체 장치

Country Status (5)

Country Link
EP (1) EP0082325B1 (ko)
JP (1) JPS5891631A (ko)
KR (1) KR840002584A (ko)
CA (1) CA1189983A (ko)
DE (1) DE3279167D1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235519A (ja) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol 埋め込み電極の接続方法
CN103000674B (zh) * 2012-12-14 2017-04-12 复旦大学 一种晶体管及其制造方法
US9570595B2 (en) * 2012-12-14 2017-02-14 Fudan University Transistor and method of making

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE354098B (ko) * 1971-07-05 1973-02-26 Svenska Electromagneter
US3929527A (en) * 1974-06-11 1975-12-30 Us Army Molecular beam epitaxy of alternating metal-semiconductor films
US4169746A (en) * 1977-04-28 1979-10-02 Rca Corp. Method for making silicon on sapphire transistor utilizing predeposition of leads

Also Published As

Publication number Publication date
EP0082325A2 (en) 1983-06-29
CA1189983A (en) 1985-07-02
EP0082325B1 (en) 1988-10-26
EP0082325A3 (en) 1984-12-05
DE3279167D1 (en) 1988-12-01
JPS5891631A (ja) 1983-05-31

Similar Documents

Publication Publication Date Title
KR840008222A (ko) 연결패드에서 기저의 실리콘으로 직접 연결된 고전력 금속산화물 반도체 전계효과 트랜지스터
KR830009653A (ko) 집적회로의 보호장치
KR930005234A (ko) 쇼트키 장벽 다이오드 및 쇼트키 장벽 다이오드 클램프형 트랜지스터와 이들을 제조하는 방법
KR970077228A (ko) 반도체 장치 및 반도체 장치를 포함하는 구조물
KR920005345A (ko) 터널 주입형 반도체장치 및 그 제조방법
KR950030309A (ko) 반도체장치의 보호회로
KR850000804A (ko) 반도체 장치
KR890011106A (ko) 에미터 스위칭 형태로 집적된 고-전압 바이폴라 파워 트랜지스터 및 저-전압 mos 파워 트랜지스터 구조 및 이의 제조방법
KR920015577A (ko) 반도체장치
KR900019261A (ko) 반도체장치
KR880011937A (ko) 과전압 보호용 집적회로
KR910007129A (ko) 입력보호회로를 구비한 반도체장치
US4000507A (en) Semiconductor device having two annular electrodes
KR910008861A (ko) 집적회로소자
KR870008392A (ko) 직교식 쌍극성 트랜지스터
KR890016626A (ko) 반도체장치
KR840002584A (ko) 반도체 장치
KR970067916A (ko) 접합누설이 적은 저 스트레스 광다이오드
KR890008979A (ko) 모놀리식 과전압 보호용 어셈블리
KR940008130A (ko) 반도체 장치 및 그 제조 방법
KR860001488A (ko) 바이폴러 트랜지스터와 iil이 있는 반도체 장치
KR910017656A (ko) 반도체장치
KR840005929A (ko) Mos 트랜지스터 집적회로
KR950015808A (ko) 반도체 소자
KR850000805A (ko) 받도체장치