KR920005345A - 터널 주입형 반도체장치 및 그 제조방법 - Google Patents

터널 주입형 반도체장치 및 그 제조방법 Download PDF

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KR920005345A
KR920005345A KR1019910013475A KR910013475A KR920005345A KR 920005345 A KR920005345 A KR 920005345A KR 1019910013475 A KR1019910013475 A KR 1019910013475A KR 910013475 A KR910013475 A KR 910013475A KR 920005345 A KR920005345 A KR 920005345A
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semiconductor
conductive type
semiconductor region
semiconductor device
region
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KR1019910013475A
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KR100189691B1 (ko
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히데오 혼마
스미오 가와가미
다까히로 나가노
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가나이 쯔도무
가부시기가이샤 히다찌 세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/902—FET with metal source region

Abstract

내용 없음

Description

터널 주입형 반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예의 n형 터널 주입 트랜지스터의 소자 단면 및 평면도,
제2도 및 제3도는 제1도에 나타낸 트랜지스터의 동작원리를 설명하는 도.

Claims (5)

  1. 제1도전형의 반도체 영역과, 상기 제1도전형의 반도체 영역의 표면상에 이간하여 설치된 1쌍의 금속 또는 금속화합물로 이루어진 영역과, 상기 1쌍의 영역 사이를 덮도록 상기 제1도전형의 반도체 영역의 표면상에 절연막을 거쳐 설치된 제어전극을 구비하고, 상기 1쌍의 영역중 한쪽의 영역과 상기 제1도전형의 반도체 영역이 접하는 부분은, 제1도전형의 고불순물 농도 영역인 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 제1도전형의 반도체 영역은 제1도전형의 반도체 기판의 표면 영역에 형성된 것을 특징으로 하는 반도체 장치.
  3. (1) 소정의 제1도전형의 반도체기판을 준비하는 공정과, (2) 상기 반도체 기판상에 제2도전형의 반도체 영역을 형성하는 공정과, (3) 상기 반도체 영역상에 절연막을 거쳐 제어전극을 형성하는 공정과, (4) 상기 반도체 영역내에 제2도전형의 고불순물 농도 반도체 층을 형성하는 공정과, (5) 상기 반도체 영역상에 금속을 퇴적하는 공정과, (6) 상기 반도체 기판을 열처리하는 공정과, (7) 상기 금속을 제거하는 공정으로 이루어진 반도체장치의 제조 방법.
  4. 제3항에 있어서, 상기 공정(4)에 있어서, 상기 제어전극을 마스크의 일부로 하는 것을 특징으로 하는 장치.
  5. 제3항에 있어서, 상기 공정(4)과 공정(5)과의 사이에, 상기 제어전극의 측벽에 절연막을 형성하는 공정을 가지는 것을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019910013475A 1990-08-03 1991-08-03 터널 주입형 반도체장치 및 그 제조방법 KR100189691B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2205005A JP3039967B2 (ja) 1990-08-03 1990-08-03 半導体装置
JP90-205005 1990-08-03

Publications (2)

Publication Number Publication Date
KR920005345A true KR920005345A (ko) 1992-03-28
KR100189691B1 KR100189691B1 (ko) 1999-06-01

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KR1019910013475A KR100189691B1 (ko) 1990-08-03 1991-08-03 터널 주입형 반도체장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US5177568A (ko)
EP (1) EP0469611B1 (ko)
JP (1) JP3039967B2 (ko)
KR (1) KR100189691B1 (ko)
DE (1) DE69108631T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100404523B1 (ko) * 1996-04-09 2004-05-17 지멘스 악티엔게젤샤프트 터널전류에의해제어되는전자사태항복에기초한조절가능한전류증폭작용을가지는반도체소자

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2657588B2 (ja) * 1991-01-11 1997-09-24 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5289030A (en) 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH0637302A (ja) * 1992-07-14 1994-02-10 Mitsuteru Kimura トンネルトランジスタ
EP0601823B1 (en) * 1992-12-09 2000-10-11 Compaq Computer Corporation Method of forming a field effect transistor with integrated schottky diode clamp
US5663584A (en) * 1994-05-31 1997-09-02 Welch; James D. Schottky barrier MOSFET systems and fabrication thereof
US5760449A (en) * 1994-05-31 1998-06-02 Welch; James D. Regenerative switching CMOS system
US6268636B1 (en) 1994-05-31 2001-07-31 James D. Welch Operation and biasing for single device equivalent to CMOS
US20040004262A1 (en) * 1994-05-31 2004-01-08 Welch James D. Semiconductor devices in compensated semiconductor
US6624493B1 (en) 1994-05-31 2003-09-23 James D. Welch Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems
US6091128A (en) * 1994-05-31 2000-07-18 Welch; James D. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use
RU2130668C1 (ru) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Полевой транзистор типа металл - диэлектрик-полупроводник
JP2787908B2 (ja) * 1995-12-25 1998-08-20 日本電気株式会社 半導体装置の製造方法
WO1998027597A1 (en) * 1996-12-19 1998-06-25 Honeywell Inc. Mos device having a body to source contact feature for use on soi substrates
US6060385A (en) * 1997-02-14 2000-05-09 Micro Technology, Inc. Method of making an interconnect structure
JP4213776B2 (ja) * 1997-11-28 2009-01-21 光照 木村 Ｍｏｓゲートショットキートンネルトランジスタおよびこれを用いた集積回路
JP2001036080A (ja) 1999-07-26 2001-02-09 Mitsubishi Electric Corp 半導体装置及びその製造方法
FR2805395B1 (fr) 2000-02-23 2002-05-10 Centre Nat Rech Scient Transistor mos pour circuits a haute densite d'integration
RU2002115829A (ru) * 2002-06-17 2004-03-10 Саито ТАКЕШИ (JP) Полевой транзистор
KR20040025070A (ko) * 2002-09-18 2004-03-24 아남반도체 주식회사 Ｓｏｉ 모스 트랜지스터 구조 및 그 제조 방법
US20060091490A1 (en) * 2004-11-03 2006-05-04 Hung-Wei Chen Self-aligned gated p-i-n diode for ultra-fast switching
US20060125041A1 (en) * 2004-12-14 2006-06-15 Electronics And Telecommunications Research Institute Transistor using impact ionization and method of manufacturing the same
KR100613346B1 (ko) * 2004-12-15 2006-08-21 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US8466505B2 (en) * 2005-03-10 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-level flash memory cell capable of fast programming
US7329937B2 (en) * 2005-04-27 2008-02-12 International Business Machines Corporation Asymmetric field effect transistors (FETs)
US7608898B2 (en) * 2006-10-31 2009-10-27 Freescale Semiconductor, Inc. One transistor DRAM cell structure
JP4960125B2 (ja) * 2007-03-22 2012-06-27 株式会社東芝 半導体装置およびその製造方法
JP5233174B2 (ja) * 2007-06-08 2013-07-10 サンケン電気株式会社 半導体装置
EP2239781A1 (en) 2009-04-06 2010-10-13 University College Cork-National University of Ireland, Cork Variable barrier tunnel transistor
CN101807602A (zh) * 2010-03-25 2010-08-18 复旦大学 一种不对称型源漏场效应晶体管及其制备方法
JP5740643B2 (ja) * 2010-09-22 2015-06-24 国立研究開発法人産業技術総合研究所 電界効果トランジスタ
CN102074583B (zh) * 2010-11-25 2012-03-07 北京大学 一种低功耗复合源结构mos晶体管及其制备方法
US8610233B2 (en) * 2011-03-16 2013-12-17 International Business Machines Corporation Hybrid MOSFET structure having drain side schottky junction
JP5717706B2 (ja) * 2012-09-27 2015-05-13 株式会社東芝 半導体装置及びその製造方法
WO2014064737A1 (ja) * 2012-10-25 2014-05-01 国立大学法人東北大学 Accumulation型ＭＯＳＦＥＴ
US10361193B2 (en) 2014-03-11 2019-07-23 National Institute Of Advanced Industrial Science And Technology Integrated circuit composed of tunnel field-effect transistors and method for manufacturing same
US9985611B2 (en) * 2015-10-23 2018-05-29 Intel Corporation Tunnel field-effect transistor (TFET) based high-density and low-power sequential
US9966141B2 (en) * 2016-02-19 2018-05-08 Nscore, Inc. Nonvolatile memory cell employing hot carrier effect for data storage
JP6668160B2 (ja) * 2016-05-06 2020-03-18 株式会社ジャパンディスプレイ 表示装置の製造方法
CN112216323A (zh) * 2017-09-04 2021-01-12 华为技术有限公司 一种存储单元和静态随机存储器
KR102449320B1 (ko) * 2017-09-29 2022-09-29 엘지디스플레이 주식회사 초고해상도용 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676574A (en) * 1979-11-26 1981-06-24 Semiconductor Res Found Schottky injection electrode type semiconductor device
US4690730A (en) * 1986-03-07 1987-09-01 Texas Instruments Incorporated Oxide-capped titanium silicide formation
JPS62274775A (ja) * 1986-05-23 1987-11-28 Hitachi Ltd 半導体装置
US5061981A (en) * 1987-05-22 1991-10-29 Hall John H Double diffused CMOS with Schottky to drain contacts
JPH027571A (ja) * 1988-06-27 1990-01-11 Nissan Motor Co Ltd 半導体装置
JPH02188967A (ja) * 1989-01-18 1990-07-25 Nissan Motor Co Ltd 半導体装置
US5026657A (en) * 1990-03-12 1991-06-25 Micron Technology, Inc. Split-polysilicon CMOS DRAM process incorporating self-aligned silicidation of the cell plate, transistor gates, and N+ regions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100404523B1 (ko) * 1996-04-09 2004-05-17 지멘스 악티엔게젤샤프트 터널전류에의해제어되는전자사태항복에기초한조절가능한전류증폭작용을가지는반도체소자

Also Published As

Publication number Publication date
EP0469611B1 (en) 1995-04-05
KR100189691B1 (ko) 1999-06-01
EP0469611A1 (en) 1992-02-05
US5177568A (en) 1993-01-05
JPH0491480A (ja) 1992-03-24
JP3039967B2 (ja) 2000-05-08
DE69108631D1 (de) 1995-05-11
DE69108631T2 (de) 1996-01-04

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