KR840005933A - 전계효과 트랜지스터의 제조방법 - Google Patents

전계효과 트랜지스터의 제조방법 Download PDF

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KR840005933A
KR840005933A KR1019830004240A KR830004240A KR840005933A KR 840005933 A KR840005933 A KR 840005933A KR 1019830004240 A KR1019830004240 A KR 1019830004240A KR 830004240 A KR830004240 A KR 830004240A KR 840005933 A KR840005933 A KR 840005933A
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forming
gate electrode
mask
etching
mask member
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KR1019830004240A
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KR920002090B1 (ko
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기이지 우에야나기
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미쓰다 가쓰시게
가부시기 가이샤 히다찌세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/083—Ion implantation, general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking

Abstract

내용 없음

Description

전계효호과 트랜지스터의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전계효과 트랜지스터(PET)를 설명하는 단면도.
제4도는 본 발명을 설명하는 단면도.
제5도는 본 발명의 실시예외 PET 소자의 제작 순서를 도시한 장치의 단면도이다.

Claims (2)

  1. 반도체 기판위에 그 반도체 쇼트키이 접촉을 형성하는 금속 재료로 형성된 게이트 전극과 이 게이트 전극위에 게이트 전극의 주변에서 오오버 행하는 마스크 부재를 형성하는 공정. 상기 마스크 부재를 마스크로하여 반도체 기판에 불순물을 이온 입주해서 제1의 불순물 영역과 제1의 불순물 영역을 형성하는 공정. 상기 마스크 부재의 아래의 게이트전극의 측면을 포함한 이 중간 구조체 표면에 절연물층을 형성하는 공정. 적어도 상기 마스크 부재절연물층을 적어도 게이트 전극 측면부를 남겨서 엣칭하고
    상기 제1및 제2의 불순물 영역을 노출하는 공정. 노출된 제1및 제2의 불순물 영역에 각각 전극을 형성하는 공정이 있는 것을 특징으로 하는 상기 사항을 포함하는 전계효과 트랜지스터의 제조방법.
  2. 상기 마스트 부재는 상기 반도체와 쇼트키이 접촉을 형성하는 금속재료를 엣칭하는 엣칭법에서 엣칭되지 않는 재료로 형성되어 그 마스크 부재를 마스크로 하여 그 금속재료를 엣칭하는 것에 의해서 게이트 전극 맞마스크 부재를 형성하는 것을 특징으로 하는 특허청구의 범위 제1항의 기재의 전계효과 트랜지스터의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830004240A 1982-09-16 1983-09-09 전계효과 트랜지스터의 제조방법 KR920002090B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP159611 1982-09-16
JP57-159611 1982-09-16
JP57159611A JPS5950567A (ja) 1982-09-16 1982-09-16 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
KR840005933A true KR840005933A (ko) 1984-11-19
KR920002090B1 KR920002090B1 (ko) 1992-03-10

Family

ID=15697490

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Application Number Title Priority Date Filing Date
KR1019830004240A KR920002090B1 (ko) 1982-09-16 1983-09-09 전계효과 트랜지스터의 제조방법

Country Status (6)

Country Link
US (1) US4546540A (ko)
EP (1) EP0106174B1 (ko)
JP (1) JPS5950567A (ko)
KR (1) KR920002090B1 (ko)
CA (1) CA1205922A (ko)
DE (1) DE3379296D1 (ko)

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Also Published As

Publication number Publication date
US4546540A (en) 1985-10-15
EP0106174B1 (en) 1989-03-01
JPS5950567A (ja) 1984-03-23
CA1205922A (en) 1986-06-10
EP0106174A2 (en) 1984-04-25
DE3379296D1 (en) 1989-04-06
JPH0354464B2 (ko) 1991-08-20
EP0106174A3 (en) 1986-07-23
KR920002090B1 (ko) 1992-03-10

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