KR950034830A - 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법 - Google Patents

전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법 Download PDF

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KR950034830A
KR950034830A KR1019950005407A KR19950005407A KR950034830A KR 950034830 A KR950034830 A KR 950034830A KR 1019950005407 A KR1019950005407 A KR 1019950005407A KR 19950005407 A KR19950005407 A KR 19950005407A KR 950034830 A KR950034830 A KR 950034830A
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layer
gate
deposited
active
active layer
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KR1019950005407A
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지. 길벗 제임스
에스. 크링베일 2세 로렌스
제이. 할친 데이빗
엠. 고리오 존
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빈센트 비. 인그라시아
모토로라 인코포레이티드
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Publication of KR950034830A publication Critical patent/KR950034830A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

전계 효과 트랜지스터(10)는 기판(12)내에 형성된 활성층(16)을 갖는다. 게이트(20)는 활성층(16)으로부터 형성된 고가 플랫폼(18)상에 침착된다. 고가 플랫폼(18)은 게이트(20)의 한쪽 측면상에서 활성 영역(13)의 상부 표면(34,36)보다 게이트(20)의 바닥 표면(21)을 높게 한다. 트랜지스터(10) 제조 방법은 게이트(20)의 바닥 표면이 주변 활성 영역(13)의 상부 표면에 비해 올라가도록 게이트(20)의 양쪽 측면에서 활성 영역표면(44)을 에칭함으로써 고가 플랫폼(18)을 형성한다. 게이트(20) 및/또는 패턴화된 포토레지스트층(116)이 이러한 에지를 수행하기 위한 마스크로서 사용될 수 있다.

Description

전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 따른 MESFET 구조를 예시하는 단면도, 제7도는 본 발명의 선택적인 실시예에 따른 MESFET 구조를 예시하는 단면도.

Claims (6)

  1. 전계 효과 트랜지스터(10)에 있어서, 자신의 상부에 활성 영역(13)을 갖고 있는 화합물 반도체기판(12)과; 상기 기판의 상기 활성 영역내에 침착되며 고가 플랫폼(18)을 갖고 있는 활성층(16)과; 상기 활성층의 제1엔드(end)와 접촉하여 침착되어 있는 소스 영역(26) 및, 상기 활성층의 제2엔드와 접촉하여 침착되되 상기 고가 플랫폼보다 그 높이가 낮은 드레인 영역(28) 및; 상기 고가 플랫폼상에 직접 침착되어 상기 게이트층과 상기 활성층 사이에 쇼트키 접합을 형성하는 게이트층(20)을 포함하는 전계 효과 트랜지스터.
  2. 금속 반도체 전계 효과 트랜지스터(10)에 있어서, 필드 산화물층(14)이 자신의 상부에 침착되어 표면부에서 활성영역(13)을 규정하고 있는 화합물 반도체 기판(12)과; 상기 활성 영역내에 침착되며 고가 플랫폼(18)을 갖고 있는 활성층(16)과; 상기 고가 플랫폼상에 직접 형성된 내화 금속 게이트(20) 및; 상기 게이트층의 양쪽 맞은편에서 상기 능동 영역내에 침착되되 상기 고가 플랫폼보다 그 높이들이 낮은 소스 및 드레인 영역(26,28)을 포함하는 금속 반도체 전계 효과 트랜지스터.
  3. 제2항에 있어서, 상기 소스 및 드레인 영역중 적어도 하나는 사실상 상기 게이트층에 대해 자기정렬되는 금속 반도체 전계 효과 트랜지스터.
  4. 자신의 상부에 침착되어 있는 활성층(18) 및, 이 활성층 상에 직접 형성되어 상기 활성층을 제1 및 제2부분으로 나누는 게이트층(20)을 갖고 있는 화합물 반도체 기판(12)상에 전계 효과 트랜지스터(10)를 제조하는 방법에 있어서, 상기 활성층의 상기 제1부분에 상기 게이트층의 바닥 표면 아래에 위치되는 오목한 표면(34)을 제공하기 위해 상기 활성층을 에칭하는 단계 및; 상기 게이트층의 양쪽 맞은편에 소스 및 드레인 영역을 형성하는 단계를 포함하는 전계 효과 트랜지스터 제조 방법.
  5. 제4항에 있어서, 상기 게이트층의 양쪽 맞은편에 그리고 이 게이트층에 인접하여 제1및 제2스페이서(22,24)를 형성하는 단계를 더 포함하는 전계 효과 트랜지스터 제조 방법.
  6. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950005407A 1994-04-29 1995-03-16 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법 KR950034830A (ko)

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US23574594A 1994-04-29 1994-04-29
US235,745 1994-04-29

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US (2) US5508539A (ko)
EP (1) EP0680092B1 (ko)
JP (1) JPH07302805A (ko)
KR (1) KR950034830A (ko)
DE (1) DE69523088D1 (ko)

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Publication number Publication date
EP0680092A3 (en) 1998-06-10
US5631175A (en) 1997-05-20
DE69523088D1 (de) 2001-11-15
EP0680092B1 (en) 2001-10-10
US5508539A (en) 1996-04-16
EP0680092A2 (en) 1995-11-02
JPH07302805A (ja) 1995-11-14

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