DE69523088D1 - Strukturen von Feldeffekt-Transistoren mit erhöhtem Gitter und Herstellungsverfahren - Google Patents

Strukturen von Feldeffekt-Transistoren mit erhöhtem Gitter und Herstellungsverfahren

Info

Publication number
DE69523088D1
DE69523088D1 DE69523088T DE69523088T DE69523088D1 DE 69523088 D1 DE69523088 D1 DE 69523088D1 DE 69523088 T DE69523088 T DE 69523088T DE 69523088 T DE69523088 T DE 69523088T DE 69523088 D1 DE69523088 D1 DE 69523088D1
Authority
DE
Germany
Prior art keywords
structures
manufacturing process
field effect
effect transistors
increased lattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523088T
Other languages
English (en)
Inventor
James G Gilbert
Klingbeil, Jr
David J Halchin
John M Golio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69523088D1 publication Critical patent/DE69523088D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69523088T 1994-04-29 1995-04-18 Strukturen von Feldeffekt-Transistoren mit erhöhtem Gitter und Herstellungsverfahren Expired - Lifetime DE69523088D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23574594A 1994-04-29 1994-04-29

Publications (1)

Publication Number Publication Date
DE69523088D1 true DE69523088D1 (de) 2001-11-15

Family

ID=22886749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523088T Expired - Lifetime DE69523088D1 (de) 1994-04-29 1995-04-18 Strukturen von Feldeffekt-Transistoren mit erhöhtem Gitter und Herstellungsverfahren

Country Status (5)

Country Link
US (2) US5508539A (de)
EP (1) EP0680092B1 (de)
JP (1) JPH07302805A (de)
KR (1) KR950034830A (de)
DE (1) DE69523088D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
TW479364B (en) * 1999-04-28 2002-03-11 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device comprising a field effect transistor
US6531347B1 (en) * 2000-02-08 2003-03-11 Advanced Micro Devices, Inc. Method of making recessed source drains to reduce fringing capacitance
US6780703B2 (en) 2002-08-27 2004-08-24 Freescale Semiconductor, Inc. Method for forming a semiconductor device
US7033897B2 (en) * 2003-10-23 2006-04-25 Texas Instruments Incorporated Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology
US7344951B2 (en) * 2004-09-13 2008-03-18 Texas Instruments Incorporated Surface preparation method for selective and non-selective epitaxial growth
US7335959B2 (en) * 2005-01-06 2008-02-26 Intel Corporation Device with stepped source/drain region profile
US7541239B2 (en) * 2006-06-30 2009-06-02 Intel Corporation Selective spacer formation on transistors of different classes on the same device
US9076817B2 (en) 2011-08-04 2015-07-07 International Business Machines Corporation Epitaxial extension CMOS transistor
US8841709B2 (en) * 2012-04-18 2014-09-23 Macronix International Co., Ltd. JFET device and method of manufacturing the same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131367A (en) * 1978-11-13 1982-09-07 Keming W. Yeh Self-aligned mesfet having reduced series resistance
US4407004A (en) * 1978-11-13 1983-09-27 Xerox Corporation Self-aligned MESFET having reduced series resistance
JPS5671980A (en) * 1979-11-15 1981-06-15 Mitsubishi Electric Corp Schottky barrier gate type field effect transistor and preparation method thereof
FR2493604A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Transistors a effet de champ a grille ultra courte
JPS57128071A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect type semiconductor device and manufacture thereof
US4587540A (en) * 1982-04-05 1986-05-06 International Business Machines Corporation Vertical MESFET with mesa step defining gate length
JPS5950567A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd 電界効果トランジスタの製造方法
JPS59152669A (ja) * 1983-02-21 1984-08-31 Mitsubishi Electric Corp 電界効果トランジスタ
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
FR2557368B1 (fr) * 1983-12-27 1986-04-11 Thomson Csf Transistor a effet de champ, de structure verticale submicronique, et son procede de realisation
US4855246A (en) * 1984-08-27 1989-08-08 International Business Machines Corporation Fabrication of a gaas short channel lightly doped drain mesfet
JPS622665A (ja) * 1985-06-28 1987-01-08 Fujitsu Ltd 半導体装置及びその製造方法
US4965218A (en) * 1985-10-21 1990-10-23 Itt Corporation Self-aligned gate realignment employing planarizing overetch
WO1987003742A1 (en) * 1985-12-13 1987-06-18 Allied Corporation Mesfet device having a semiconductor surface barrier layer
US4960718A (en) * 1985-12-13 1990-10-02 Allied-Signal Inc. MESFET device having a semiconductor surface barrier layer
JPS62262466A (ja) * 1986-05-09 1987-11-14 Toshiba Corp Ｍｅｓ　ｆｅｔの製造方法
JPS63120471A (ja) * 1986-11-08 1988-05-24 Mitsubishi Electric Corp シヨツトキ障壁ゲ−ト電界効果トランジスタ
JPS6457759A (en) * 1987-08-28 1989-03-06 Sharp Kk Field-effect-type semiconductor device
JPH01161772A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置およびその製造方法
JP2728427B2 (ja) * 1988-04-13 1998-03-18 株式会社日立製作所 電界効果型トランジスタとその製法
JPH0444328A (ja) * 1990-06-11 1992-02-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
EP0501275A3 (en) * 1991-03-01 1992-11-19 Motorola, Inc. Method of making symmetrical and asymmetrical mesfets
JPH05299441A (ja) * 1992-04-24 1993-11-12 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
DE69324630T2 (de) * 1992-06-13 1999-10-21 Sanyo Electric Co Dotierungsverfahren, Halbleiterbauelement und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
US5631175A (en) 1997-05-20
US5508539A (en) 1996-04-16
JPH07302805A (ja) 1995-11-14
EP0680092A2 (de) 1995-11-02
KR950034830A (ko) 1995-12-28
EP0680092B1 (de) 2001-10-10
EP0680092A3 (de) 1998-06-10

Similar Documents

Publication Publication Date Title
DE69415068D1 (de) Mikromotor und Herstellungsverfahren desselben
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69838999D1 (de) Motor mit paarweisen Verriegelungen von Motor und Stator und Herstellungsverfahren
DE69328110T2 (de) Isolator struktur und herstellungsverfahren
DE69430513T2 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE68925308D1 (de) Integrierte Grabentransistorstruktur und Herstellungsverfahren
DE69402221D1 (de) Bipolartransistoren und deren Herstellungsverfahren
DE69424436T2 (de) Asymmetrischer würfeleckiger gegenstand und herstellungsverfahren
DE69429906D1 (de) Halbleiterstruktur und Herstellungsverfahren
DE69122043T2 (de) Vertikaler SOI-Feldeffekttransistor und dessen Herstellungsprozess
DE69518787T2 (de) Statischer Induktionsthyristor und dessen Herstellungsverfahren
DE69123950T2 (de) SOI-Feldeffekttransistor und dessen Herstellungsverfahren
DE69433337D1 (de) Halbleiterbauelement und dessen Herstellungsverfahren
DE69420944D1 (de) Halbleitervorrichtung und herstellungsverfahren
DE69420576T2 (de) Retroreflektiver würfeleckiger körper mit erhöhten zonen und herstellungsverfahren
DE69504262D1 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69523088D1 (de) Strukturen von Feldeffekt-Transistoren mit erhöhtem Gitter und Herstellungsverfahren
DE59509632D1 (de) Bipolartransistor und Herstellungsverfahren
DE69401733D1 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69319317T2 (de) Halbleiterlaser und Herstellungsverfahren
DE69400459T2 (de) Halbleiterlaser und Herstellungsverfahren
DE69400533T2 (de) Halbleiterlaser und Herstellungsverfahren
FR2764733B1 (fr) Transistor hyperfrequence a structure quasi-autoalignee et son procede de fabrication
DE69310624D1 (de) Magnetisches Material und Herstellungsverfahren
DE69529760T2 (de) Riemenkonstruktion und herstellungsverfahren dieser riemenkonstruktion

Legal Events

Date Code Title Description
8332 No legal effect for de