FR2805395B1 - Transistor mos pour circuits a haute densite d'integration - Google Patents

Transistor mos pour circuits a haute densite d'integration

Info

Publication number
FR2805395B1
FR2805395B1 FR0002237A FR0002237A FR2805395B1 FR 2805395 B1 FR2805395 B1 FR 2805395B1 FR 0002237 A FR0002237 A FR 0002237A FR 0002237 A FR0002237 A FR 0002237A FR 2805395 B1 FR2805395 B1 FR 2805395B1
Authority
FR
France
Prior art keywords
mos transistor
high integration
integration density
density circuits
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0002237A
Other languages
English (en)
Other versions
FR2805395A1 (fr
Inventor
Emmanuel Dubois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0002237A priority Critical patent/FR2805395B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to CA002399115A priority patent/CA2399115C/fr
Priority to AU2001237483A priority patent/AU2001237483A1/en
Priority to JP2001562764A priority patent/JP5090601B2/ja
Priority to US10/204,530 priority patent/US6774451B2/en
Priority to EP01909882A priority patent/EP1258042A1/fr
Priority to PCT/FR2001/000532 priority patent/WO2001063677A1/fr
Publication of FR2805395A1 publication Critical patent/FR2805395A1/fr
Application granted granted Critical
Publication of FR2805395B1 publication Critical patent/FR2805395B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
FR0002237A 2000-02-23 2000-02-23 Transistor mos pour circuits a haute densite d'integration Expired - Fee Related FR2805395B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0002237A FR2805395B1 (fr) 2000-02-23 2000-02-23 Transistor mos pour circuits a haute densite d'integration
AU2001237483A AU2001237483A1 (en) 2000-02-23 2001-02-23 Mos transistor for high density integration circuits
JP2001562764A JP5090601B2 (ja) 2000-02-23 2001-02-23 高密度集積回路用ｍｏｓトランジスタ
US10/204,530 US6774451B2 (en) 2000-02-23 2001-02-23 Mos transistor for high density integration circuits
CA002399115A CA2399115C (fr) 2000-02-23 2001-02-23 Transistor mos pour circuits a haute densite d'integration
EP01909882A EP1258042A1 (fr) 2000-02-23 2001-02-23 Transistor mos pour circuits a haute densite d'integration
PCT/FR2001/000532 WO2001063677A1 (fr) 2000-02-23 2001-02-23 Transistor mos pour circuits a haute densite d'integration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0002237A FR2805395B1 (fr) 2000-02-23 2000-02-23 Transistor mos pour circuits a haute densite d'integration

Publications (2)

Publication Number Publication Date
FR2805395A1 FR2805395A1 (fr) 2001-08-24
FR2805395B1 true FR2805395B1 (fr) 2002-05-10

Family

ID=8847291

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0002237A Expired - Fee Related FR2805395B1 (fr) 2000-02-23 2000-02-23 Transistor mos pour circuits a haute densite d'integration

Country Status (7)

Country Link
US (1) US6774451B2 (fr)
EP (1) EP1258042A1 (fr)
JP (1) JP5090601B2 (fr)
AU (1) AU2001237483A1 (fr)
CA (1) CA2399115C (fr)
FR (1) FR2805395B1 (fr)
WO (1) WO2001063677A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
JP4647889B2 (ja) * 2003-04-25 2011-03-09 富士通セミコンダクター株式会社 ショットキーソース・ドレイン構造を有する電界効果トランジスタの製造方法
GB2526950B (en) 2011-11-23 2016-04-20 Acorn Tech Inc Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
US9685509B2 (en) 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
US9917158B2 (en) * 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (fr) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Transistor à nanofils à source et drain induits par des contacts électriques avec une hauteur de barrière de schottky négative

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665414A (en) * 1982-07-23 1987-05-12 American Telephone And Telegraph Company, At&T Bell Laboratories Schottky-barrier MOS devices
US4638551A (en) * 1982-09-24 1987-01-27 General Instrument Corporation Schottky barrier device and method of manufacture
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
US4696093A (en) * 1986-06-09 1987-09-29 Welch James D Fabrication of Schottky barrier MOSFETS
JPS6370576A (ja) * 1986-09-12 1988-03-30 Komatsu Ltd 薄膜トランジスタおよびその製造方法
FR2660114B1 (fr) * 1990-03-22 1997-05-30 France Etat Dispositif de detection optique a seuil de detection variable.
JP2751658B2 (ja) * 1990-04-27 1998-05-18 日本電気株式会社 半導体装置
DE69121629T2 (de) * 1990-04-27 1997-02-13 Nippon Electric Co Dünnfilmtransistor mit Schottky-Sperrschicht
JP3039967B2 (ja) * 1990-08-03 2000-05-08 株式会社日立製作所 半導体装置
US5407837A (en) * 1992-08-31 1995-04-18 Texas Instruments Incorporated Method of making a thin film transistor
JPH06177366A (ja) * 1992-12-04 1994-06-24 Nikon Corp ショットキーダイオードの製造方法
US5663584A (en) * 1994-05-31 1997-09-02 Welch; James D. Schottky barrier MOSFET systems and fabrication thereof
JP2630279B2 (ja) * 1994-10-12 1997-07-16 日本電気株式会社 ショットキー型光検出器およびその駆動方法
JPH08115914A (ja) * 1994-10-14 1996-05-07 Hitachi Ltd 半導体装置
JP3614231B2 (ja) * 1995-02-17 2005-01-26 株式会社ルネサステクノロジ 半導体記憶素子および半導体記憶装置
JP2760345B2 (ja) * 1996-06-25 1998-05-28 日本電気株式会社 単一電子素子
JP3217015B2 (ja) * 1996-07-18 2001-10-09 インターナショナル・ビジネス・マシーンズ・コーポレーション 電界効果トランジスタの形成方法
JP3003633B2 (ja) * 1997-07-09 2000-01-31 日本電気株式会社 電界効果型トランジスタ及びその製造方法
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts

Also Published As

Publication number Publication date
JP2003524899A (ja) 2003-08-19
EP1258042A1 (fr) 2002-11-20
AU2001237483A1 (en) 2001-09-03
WO2001063677A1 (fr) 2001-08-30
US20030094629A1 (en) 2003-05-22
US6774451B2 (en) 2004-08-10
FR2805395A1 (fr) 2001-08-24
JP5090601B2 (ja) 2012-12-05
CA2399115A1 (fr) 2002-08-30
CA2399115C (fr) 2009-10-13

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Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 17

ST Notification of lapse

Effective date: 20171031