FR2813707B1 - Fabrication d'un transistor bipolaire - Google Patents

Fabrication d'un transistor bipolaire

Info

Publication number
FR2813707B1
FR2813707B1 FR0011419A FR0011419A FR2813707B1 FR 2813707 B1 FR2813707 B1 FR 2813707B1 FR 0011419 A FR0011419 A FR 0011419A FR 0011419 A FR0011419 A FR 0011419A FR 2813707 B1 FR2813707 B1 FR 2813707B1
Authority
FR
France
Prior art keywords
manufacture
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0011419A
Other languages
English (en)
Other versions
FR2813707A1 (fr
Inventor
Didier Dutartre
Alain Chantre
Michel Marty
Sebastien Jouan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0011419A priority Critical patent/FR2813707B1/fr
Priority to US09/947,190 priority patent/US6642096B2/en
Publication of FR2813707A1 publication Critical patent/FR2813707A1/fr
Application granted granted Critical
Publication of FR2813707B1 publication Critical patent/FR2813707B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR0011419A 2000-09-07 2000-09-07 Fabrication d'un transistor bipolaire Expired - Fee Related FR2813707B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0011419A FR2813707B1 (fr) 2000-09-07 2000-09-07 Fabrication d'un transistor bipolaire
US09/947,190 US6642096B2 (en) 2000-09-07 2001-09-05 Bipolar transistor manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0011419A FR2813707B1 (fr) 2000-09-07 2000-09-07 Fabrication d'un transistor bipolaire

Publications (2)

Publication Number Publication Date
FR2813707A1 FR2813707A1 (fr) 2002-03-08
FR2813707B1 true FR2813707B1 (fr) 2002-11-29

Family

ID=8854065

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0011419A Expired - Fee Related FR2813707B1 (fr) 2000-09-07 2000-09-07 Fabrication d'un transistor bipolaire

Country Status (2)

Country Link
US (1) US6642096B2 (fr)
FR (1) FR2813707B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1377697A1 (fr) * 2001-03-30 2004-01-07 Koninklijke Philips Electronics N.V. Suppression d'autodopage de type n dans les epitaxies de si et sige a basse temperature
US6534371B2 (en) * 2001-06-11 2003-03-18 International Business Machines Corporation C implants for improved SiGe bipolar yield
TWI223446B (en) * 2002-11-05 2004-11-01 Ind Tech Res Inst Method of ultra thin base fabrication for Si/SiGe hetro bipolar transistor
KR100654354B1 (ko) * 2005-07-25 2006-12-08 삼성전자주식회사 게더링 기능을 가지는 저결함 에피택셜 반도체 기판, 이를이용한 이미지 센서 및 이의 제조 방법
US8299500B2 (en) * 2005-08-23 2012-10-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region
US7378324B2 (en) * 2006-03-30 2008-05-27 International Business Machines Corporation Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same
US9425260B2 (en) 2014-03-13 2016-08-23 International Business Machines Corporation Application of super lattice films on insulator to lateral bipolar transistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855009A (en) * 1973-09-20 1974-12-17 Texas Instruments Inc Ion-implantation and conventional epitaxy to produce dielectrically isolated silicon layers
DE3825701A1 (de) * 1987-07-29 1989-02-09 Toshiba Kawasaki Kk Verfahren zur herstellung eines bipolaren transistors
DE69107779T2 (de) * 1990-10-31 1995-09-21 Ibm Transistor mit selbstjustierender epitaxialer Basis und dessen Herstellungsverfahren.
US5670788A (en) * 1992-01-22 1997-09-23 Massachusetts Institute Of Technology Diamond cold cathode
US5516710A (en) * 1994-11-10 1996-05-14 Northern Telecom Limited Method of forming a transistor
DE19755979A1 (de) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor
JPH10242153A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体ウエハ、半導体ウエハの製造方法、半導体装置および半導体装置の製造方法
US5885861A (en) * 1997-05-30 1999-03-23 Advanced Micro Devices, Inc. Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor
JPH11297976A (ja) * 1998-04-07 1999-10-29 Sony Corp エピタキシャル半導体基板およびその製造方法ならびに半導体装置の製造方法ならびに固体撮像装置の製造方法
FR2795233B1 (fr) * 1999-06-18 2001-08-24 St Microelectronics Sa Procede de fabrication autoaligne de transistors bipolaires

Also Published As

Publication number Publication date
US20020042178A1 (en) 2002-04-11
FR2813707A1 (fr) 2002-03-08
US6642096B2 (en) 2003-11-04

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090529