FR2849267B1 - Fabrication d'un condensateur a capacite elevee - Google Patents

Fabrication d'un condensateur a capacite elevee

Info

Publication number
FR2849267B1
FR2849267B1 FR0216306A FR0216306A FR2849267B1 FR 2849267 B1 FR2849267 B1 FR 2849267B1 FR 0216306 A FR0216306 A FR 0216306A FR 0216306 A FR0216306 A FR 0216306A FR 2849267 B1 FR2849267 B1 FR 2849267B1
Authority
FR
France
Prior art keywords
capacitor
manufacture
high capacitor
capacitor capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0216306A
Other languages
English (en)
Other versions
FR2849267A1 (fr
Inventor
Philippe Vigie
Guillaume Guegan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0216306A priority Critical patent/FR2849267B1/fr
Priority to US10/740,184 priority patent/US20040131762A1/en
Publication of FR2849267A1 publication Critical patent/FR2849267A1/fr
Application granted granted Critical
Publication of FR2849267B1 publication Critical patent/FR2849267B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
FR0216306A 2002-12-20 2002-12-20 Fabrication d'un condensateur a capacite elevee Expired - Fee Related FR2849267B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0216306A FR2849267B1 (fr) 2002-12-20 2002-12-20 Fabrication d'un condensateur a capacite elevee
US10/740,184 US20040131762A1 (en) 2002-12-20 2003-12-18 Manufacturing of a high-capacitance capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0216306A FR2849267B1 (fr) 2002-12-20 2002-12-20 Fabrication d'un condensateur a capacite elevee

Publications (2)

Publication Number Publication Date
FR2849267A1 FR2849267A1 (fr) 2004-06-25
FR2849267B1 true FR2849267B1 (fr) 2005-03-25

Family

ID=32406262

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0216306A Expired - Fee Related FR2849267B1 (fr) 2002-12-20 2002-12-20 Fabrication d'un condensateur a capacite elevee

Country Status (2)

Country Link
US (1) US20040131762A1 (fr)
FR (1) FR2849267B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9005331B2 (en) 2004-12-22 2015-04-14 Brookhaven Science Associates, Llc Platinum-coated non-noble metal-noble metal core-shell electrocatalysts
US7855021B2 (en) * 2004-12-22 2010-12-21 Brookhaven Science Associates, Llc Electrocatalysts having platium monolayers on palladium, palladium alloy, and gold alloy core-shell nanoparticles, and uses thereof
US7691780B2 (en) * 2004-12-22 2010-04-06 Brookhaven Science Associates, Llc Platinum- and platinum alloy-coated palladium and palladium alloy particles and uses thereof
WO2008042379A2 (fr) * 2006-09-29 2008-04-10 Grant Media, Llc Distribution en ligne de contenu à durée de vie critique
US20090115060A1 (en) 2007-11-01 2009-05-07 Infineon Technologies Ag Integrated circuit device and method
US9716279B2 (en) 2013-05-15 2017-07-25 Brookhaven Science Associates, Llc Core-shell fuel cell electrodes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053917A (en) * 1989-08-30 1991-10-01 Nec Corporation Thin film capacitor and manufacturing method thereof
US5453347A (en) * 1992-11-02 1995-09-26 Radiant Technologies Method for constructing ferroelectric capacitors on integrated circuit substrates
JPH0855967A (ja) * 1994-07-29 1996-02-27 Texas Instr Inc <Ti> 強誘電体薄膜キャパシタの製造方法
US6312567B1 (en) * 1996-03-21 2001-11-06 Tong Yang Cement Corporation Method of forming a (200)-oriented platinum layer
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
US6265738B1 (en) * 1997-03-03 2001-07-24 Matsushita Electronics Corporation Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
JP3201468B2 (ja) * 1997-05-26 2001-08-20 日本電気株式会社 容量素子及びその製造方法
US6417110B1 (en) * 1997-08-23 2002-07-09 Radiant Technologies Inc Method for constructing heat resistant electrode structures on silicon substrates

Also Published As

Publication number Publication date
US20040131762A1 (en) 2004-07-08
FR2849267A1 (fr) 2004-06-25

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070831