AU2001284817A1 - Metal sulfide-oxide semiconductor transistor devices - Google Patents

Metal sulfide-oxide semiconductor transistor devices

Info

Publication number
AU2001284817A1
AU2001284817A1 AU2001284817A AU8481701A AU2001284817A1 AU 2001284817 A1 AU2001284817 A1 AU 2001284817A1 AU 2001284817 A AU2001284817 A AU 2001284817A AU 8481701 A AU8481701 A AU 8481701A AU 2001284817 A1 AU2001284817 A1 AU 2001284817A1
Authority
AU
Australia
Prior art keywords
oxide semiconductor
metal sulfide
semiconductor transistor
transistor devices
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001284817A
Inventor
Walter David Braddock Iv
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001284817A1 publication Critical patent/AU2001284817A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
AU2001284817A 2000-08-12 2001-08-10 Metal sulfide-oxide semiconductor transistor devices Abandoned AU2001284817A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/638,384 US6670651B1 (en) 2000-05-04 2000-08-12 Metal sulfide-oxide semiconductor transistor devices
PCT/US2001/025161 WO2002015283A2 (en) 2000-08-12 2001-08-10 Metal sulfide-oxide semiconductor transistor devices

Publications (1)

Publication Number Publication Date
AU2001284817A1 true AU2001284817A1 (en) 2002-02-25

Family

ID=24559811

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001284817A Abandoned AU2001284817A1 (en) 2000-08-12 2001-08-10 Metal sulfide-oxide semiconductor transistor devices

Country Status (3)

Country Link
US (1) US6670651B1 (en)
AU (1) AU2001284817A1 (en)
WO (1) WO2002015283A2 (en)

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US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
US20070252216A1 (en) * 2006-04-28 2007-11-01 Infineon Technologies Ag Semiconductor device and a method of manufacturing such a semiconductor device
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9461134B1 (en) 2015-05-20 2016-10-04 Asm Ip Holding B.V. Method for forming source/drain contact structure with chalcogen passivation
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US9985019B2 (en) 2015-09-16 2018-05-29 Vanguard International Semiconductor Corporation Semiconductor structure with high-voltage and low-voltage CMOS devices and method for manufacturing the same
TWI594365B (en) * 2015-10-19 2017-08-01 世界先進積體電路股份有限公司 Semiconductor structure and method for manufacturing the same

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US4331737A (en) 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
JPS607720A (en) 1983-06-28 1985-01-16 Nec Corp Epitaxial growing method
US4935789A (en) 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4802180A (en) 1986-04-30 1989-01-31 American Telephone And Telegraph Company, At&T Bell Laboratories Growth of congruently melting gadolinium scandium gallium garnet
US4745082A (en) 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
US4843450A (en) 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US4859253A (en) 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5124762A (en) 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5451548A (en) 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5550089A (en) 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5767388A (en) 1995-04-26 1998-06-16 Siemens Aktiengesellschaft Methane sensor and method for operating a sensor
US5665658A (en) 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5597768A (en) 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5693565A (en) 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
JP3604835B2 (en) 1996-09-11 2004-12-22 大和製罐株式会社 Method for manufacturing aluminum DI can having irregular pattern on body
US5920105A (en) 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
US6030453A (en) 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
JP3734586B2 (en) * 1997-03-05 2006-01-11 富士通株式会社 Semiconductor device and manufacturing method thereof
US6207976B1 (en) * 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US5945718A (en) * 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6094295A (en) 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6150677A (en) 1998-02-19 2000-11-21 Sumitomo Electric Industries, Ltd. Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
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JP3850580B2 (en) * 1999-03-30 2006-11-29 株式会社東芝 Semiconductor device

Also Published As

Publication number Publication date
WO2002015283A3 (en) 2002-03-28
US6670651B1 (en) 2003-12-30
WO2002015283A2 (en) 2002-02-21

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