AU2000274531A1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
AU2000274531A1
AU2000274531A1 AU2000274531A AU7453100A AU2000274531A1 AU 2000274531 A1 AU2000274531 A1 AU 2000274531A1 AU 2000274531 A AU2000274531 A AU 2000274531A AU 7453100 A AU7453100 A AU 7453100A AU 2000274531 A1 AU2000274531 A1 AU 2000274531A1
Authority
AU
Australia
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000274531A
Inventor
Kouichi Ashiga
Katsuhiro Masujima
Takaaki Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Japan Display Inc
Original Assignee
Hitachi Device Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Device Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Device Engineering Co Ltd
Publication of AU2000274531A1 publication Critical patent/AU2000274531A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
AU2000274531A 2000-10-03 2000-10-03 Semiconductor device Abandoned AU2000274531A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/006859 WO2002029893A1 (en) 2000-10-03 2000-10-03 Semiconductor device

Publications (1)

Publication Number Publication Date
AU2000274531A1 true AU2000274531A1 (en) 2002-04-15

Family

ID=11736554

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000274531A Abandoned AU2000274531A1 (en) 2000-10-03 2000-10-03 Semiconductor device

Country Status (3)

Country Link
JP (1) JPWO2002029893A1 (en)
AU (1) AU2000274531A1 (en)
WO (1) WO2002029893A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4401621B2 (en) 2002-05-07 2010-01-20 株式会社日立製作所 Semiconductor integrated circuit device
JP4576862B2 (en) * 2004-03-22 2010-11-10 株式会社デンソー Integrated circuit device
CN1973582A (en) 2004-06-21 2007-05-30 皇家飞利浦电子股份有限公司 Gas discharge lamp driving method
US7568115B2 (en) * 2005-09-28 2009-07-28 Intel Corporation Power delivery and power management of many-core processors
JP2007180085A (en) * 2005-12-27 2007-07-12 Seiko Epson Corp Integrated circuit device
JP4770465B2 (en) * 2006-01-04 2011-09-14 富士通セミコンダクター株式会社 Semiconductor integrated circuit device
JP5053577B2 (en) * 2006-06-23 2012-10-17 株式会社リコー Output voltage adjustment method
US8502590B2 (en) * 2009-12-14 2013-08-06 The Boeing Company System and method of controlling devices operating within different voltage ranges
US8970190B2 (en) 2011-03-10 2015-03-03 Microchip Technology Incorporated Using low voltage regulator to supply power to a source-biased power domain

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100231393B1 (en) * 1991-04-18 1999-11-15 나시모토 류조 Semiconductor integrated circuit
US5583457A (en) * 1992-04-14 1996-12-10 Hitachi, Ltd. Semiconductor integrated circuit device having power reduction mechanism
JPH05299624A (en) * 1992-04-23 1993-11-12 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH08191107A (en) * 1995-01-11 1996-07-23 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
US6060905A (en) * 1996-02-07 2000-05-09 International Business Machines Corporation Variable voltage, variable impedance CMOS off-chip driver and receiver interface and circuits
JP3080015B2 (en) * 1996-11-19 2000-08-21 日本電気株式会社 Semiconductor integrated circuit with built-in regulator
JP4103969B2 (en) * 1997-01-23 2008-06-18 川崎マイクロエレクトロニクス株式会社 Semiconductor integrated circuit
JPH10228339A (en) * 1997-02-13 1998-08-25 Canon Inc Power supply management device
JP4109340B2 (en) * 1997-12-26 2008-07-02 株式会社ルネサステクノロジ Semiconductor integrated circuit device
JP4043623B2 (en) * 1998-11-25 2008-02-06 富士通株式会社 Internal voltage generation circuit
JP3238134B2 (en) * 1998-12-25 2001-12-10 株式会社日立製作所 Semiconductor device

Also Published As

Publication number Publication date
JPWO2002029893A1 (en) 2004-02-19
WO2002029893A1 (en) 2002-04-11

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