DE60144297D1 - Imierten source-drain-strukturen - Google Patents

Imierten source-drain-strukturen

Info

Publication number
DE60144297D1
DE60144297D1 DE60144297T DE60144297T DE60144297D1 DE 60144297 D1 DE60144297 D1 DE 60144297D1 DE 60144297 T DE60144297 T DE 60144297T DE 60144297 T DE60144297 T DE 60144297T DE 60144297 D1 DE60144297 D1 DE 60144297D1
Authority
DE
Germany
Prior art keywords
drain structures
imaged source
imaged
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144297T
Other languages
English (en)
Inventor
Samar K Saha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Philips Semiconductors Inc
Original Assignee
NXP BV
Philips Semiconductors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV, Philips Semiconductors Inc filed Critical NXP BV
Application granted granted Critical
Publication of DE60144297D1 publication Critical patent/DE60144297D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60144297T 2000-04-11 2001-01-31 Imierten source-drain-strukturen Expired - Lifetime DE60144297D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/546,801 US6344405B1 (en) 2000-04-11 2000-04-11 Transistors having optimized source-drain structures and methods for making the same
PCT/US2001/003269 WO2001075959A1 (en) 2000-04-04 2001-01-31 Transistors having optimized source-drain structures and methods for making the same

Publications (1)

Publication Number Publication Date
DE60144297D1 true DE60144297D1 (de) 2011-05-05

Family

ID=24182066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144297T Expired - Lifetime DE60144297D1 (de) 2000-04-11 2001-01-31 Imierten source-drain-strukturen

Country Status (5)

Country Link
US (1) US6344405B1 (de)
EP (1) EP1380049B1 (de)
JP (1) JP2003529932A (de)
DE (1) DE60144297D1 (de)
WO (1) WO2001075959A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6466489B1 (en) * 2001-05-18 2002-10-15 International Business Machines Corporation Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits
US6475885B1 (en) * 2001-06-29 2002-11-05 Advanced Micro Devices, Inc. Source/drain formation with sub-amorphizing implantation
US20060170053A1 (en) * 2003-05-09 2006-08-03 Yee-Chia Yeo Accumulation mode multiple gate transistor
US7009248B2 (en) * 2003-10-02 2006-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with asymmetric pocket implants
US7071069B2 (en) * 2003-12-22 2006-07-04 Chartered Semiconductor Manufacturing, Ltd Shallow amorphizing implant for gettering of deep secondary end of range defects
US7843012B2 (en) * 2007-01-31 2010-11-30 United Microelectronics Corp. CMOS transistor
US8236632B2 (en) 2010-10-07 2012-08-07 International Business Machines Corporation FET structures with trench implantation to improve back channel leakage and body resistance
US9299702B2 (en) * 2013-09-24 2016-03-29 Samar Saha Transistor structure and method with an epitaxial layer over multiple halo implants
US11488871B2 (en) * 2013-09-24 2022-11-01 Samar K. Saha Transistor structure with multiple halo implants having epitaxial layer over semiconductor-on-insulator substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894158A (en) * 1991-09-30 1999-04-13 Stmicroelectronics, Inc. Having halo regions integrated circuit device structure
US5675166A (en) * 1995-07-07 1997-10-07 Motorola, Inc. FET with stable threshold voltage and method of manufacturing the same
KR100223846B1 (ko) * 1997-05-28 1999-10-15 구본준 반도체 소자 및 그의 제조방법
US6025232A (en) * 1997-11-12 2000-02-15 Micron Technology, Inc. Methods of forming field effect transistors and related field effect transistor constructions
US6114211A (en) * 1998-11-18 2000-09-05 Advanced Micro Devices, Inc. Semiconductor device with vertical halo region and methods of manufacture

Also Published As

Publication number Publication date
JP2003529932A (ja) 2003-10-07
EP1380049A1 (de) 2004-01-14
EP1380049B1 (de) 2011-03-23
US6344405B1 (en) 2002-02-05
WO2001075959A1 (en) 2001-10-11

Similar Documents

Publication Publication Date Title
DE60013305D1 (de) Perkolationsvorrichtung
DE60116715D1 (de) Ablationskartierungskatheter
DE60140253D1 (de) Oreinheit
ATE252099T1 (de) Biarylcarboxamide
NO20010834D0 (no) Flerbruks-rørfrakoblingsanordning
ATE312098T1 (de) Thiazinoxazolidinon
ATA2932001A (de) Schneefräse
DE60128494D1 (de) Wachstumhormonsekretionsförderer
DE60107598D1 (de) Smart-skin strukturen
NO20032338D0 (no) Tappestang
DE60102473D1 (de) Indolochinazolinone
ATE298751T1 (de) 7-oxopyridoryrimidine
AR028336A1 (es) 4-hidroxi-tetrahidropiridonas fenilsubstituidas
ATE509008T1 (de) Sulfonylguanidine
DE60144297D1 (de) Imierten source-drain-strukturen
AR028061A1 (es) 2-enamino-cetonitrilos fenil-substituidos
AR027931A1 (es) Antitranspirantes
DE10052925B4 (de) Schaukelbett
AR027982A1 (es) Aril- y heteroarilsulfonatos
DE60107332D1 (de) Kraftstoffeinpritzventil
ATE284887T1 (de) Thienopyrrolidinone
DE10054120B4 (de) Aufsparrendämmelement
ATA7092001A (de) Skibindungseinstellgerät
NO20002644D0 (no) Kontrastmiddel
AT500246B8 (de) Chokerring