KR890001187A - 반도체 집적회로 장치 - Google Patents

반도체 집적회로 장치 Download PDF

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Publication number
KR890001187A
KR890001187A KR1019880006128A KR880006128A KR890001187A KR 890001187 A KR890001187 A KR 890001187A KR 1019880006128 A KR1019880006128 A KR 1019880006128A KR 880006128 A KR880006128 A KR 880006128A KR 890001187 A KR890001187 A KR 890001187A
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KR
South Korea
Prior art keywords
integrated circuit
circuit device
semiconductor integrated
semiconductor region
conductive type
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Application number
KR1019880006128A
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English (en)
Inventor
아끼라 이데
고우이찌 도또하시
마사노리 오다까
노부오 단바
Original Assignee
미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Application filed by 미다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR890001187A publication Critical patent/KR890001187A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

반도체 직접회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 의한 바이폴라 CMOS LSI를 도시하는 단면도.
제2도는 제1도에 도시하는 바이폴라 CMOS LST에 있어서의 입력 보호서자의 전류 제한 저항의 평면도.
제3도는 제1도에 도시하는 바이폴라 CMOS LSI에 있어서의 입력 보호소자의 n찬넬 MOSFET의 평면도.

Claims (9)

  1. 바이폴라 트랜지스터와 MISFET를 갖는 반도체 집적회로 장치로서, 제1도전형의 제1반도체 영역에 의해 전기적으로 분리된 제2도전형의 제2반도체 영역중에 마련된 제1도전형의 확산 저항에 의해 입력 보호 소자의 전류 제한 저항을 구성하고, 또한 상기 제2도 전형의 반도체 영역을 플로팅 상태로 한 것을 특징으로 하는 반도체 집적회로 장치.
  2. 특허청구의 범위 제1항에 있어서, 상기 확산 저항의 한쪽 끝이 입력 단자에 접속되고, 다른족이 전압 클램프용의 MISFET의 드레인에 접속되어 있는 것을 특징으로 하는 반도체 집적회로 장치.
  3. 특허청구의 범위 제1항에 있어서, 상기 제1도전형의 제1반도체 영역이 n형의 반도체 영역이고, 상기 제1도전형의 확산 저항이 p웰중에 마련된 n형의 확산 저항인 것을 특징으로 하는 반도체 집적회로 장치.
  4. 특허청구의 범위 제2항에 있어서, 상기 ,MISFET가 p웰중에 마련된 n찬넬 MISFET인 것을 특징으로 하는 반도체 집접회로 장치.
  5. 특허청구의 범위 제3항에 있어서, 상기 n형의 반도체 영역이 전원 전압 Vcc에 접속되어 있는 것을 특징으로 하는 반도체 집적회로 장치.
  6. 특허청구의 범위 제1항에 있어서, 상기 반도체 집적회로 장치 스테이틱 RAM인 것을 특징으로 하는 반도체 집적회로 장치.
  7. 특허청구의 범위 제6항에 있어서, 상기 스테이틱 RAM의 메모리셀부가 상기 제1도전형의 제1의 반도체 영역에 의해 분리되어 있는 것을 특징으로 하는 반도체 집적회로 장치.
  8. 특허청구의 범위 제7항에 있어서, 상기 제1도전형의 제1의 반도체 영역이 n형의 반도체 영역인 것을 특징으로 하는 반도체 집적회로 장치.
  9. 특허청구위 범위 제8항에 있어서, 상기 스테이틱 RAM이 MOS스테이틱 RAM과 입출력이 컴패티블인 것을 특징으로 하는 반도체 집적회로 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880006128A 1987-06-05 1988-05-25 반도체 집적회로 장치 KR890001187A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-142027 1987-06-05
JP62142027A JPS63305545A (ja) 1987-06-05 1987-06-05 半導体集積回路装置

Publications (1)

Publication Number Publication Date
KR890001187A true KR890001187A (ko) 1989-03-18

Family

ID=15305665

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880006128A KR890001187A (ko) 1987-06-05 1988-05-25 반도체 집적회로 장치

Country Status (3)

Country Link
US (1) US4903093A (ko)
JP (1) JPS63305545A (ko)
KR (1) KR890001187A (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019889A (en) * 1988-06-29 1991-05-28 Hitachi, Ltd. Semiconductor integrated circuit device
IT1236667B (it) * 1989-11-07 1993-03-25 Sgs Thomson Microelectronics Dispositivo di protezione contro la rottura di una regione diffusa di tipo n+ inserita in una struttura integrata di potenza a semiconduttore di tipo verticale
US5116777A (en) * 1990-04-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation
US5316964A (en) * 1991-05-31 1994-05-31 Linear Technology Corporation Method of forming integrated circuits with diffused resistors in isolation regions
US5229635A (en) * 1991-08-21 1993-07-20 Vlsi Technology, Inc. ESD protection circuit and method for power-down application
KR930005184A (ko) * 1991-08-21 1993-03-23 김광호 정전기 전압 방지용 반도체 장치
JPH05121670A (ja) * 1991-10-25 1993-05-18 Nec Corp 半導体入力保護装置
JPH06188377A (ja) * 1992-12-18 1994-07-08 Matsushita Electric Ind Co Ltd 入出力保護装置
US5838033A (en) * 1993-09-08 1998-11-17 Lucent Technologies Inc. Integrated circuit with gate conductor defined resistor
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
TW307915B (en) * 1996-11-07 1997-06-11 Winbond Electronics Corp Electrostatic discharge protection circuit
US5898633A (en) * 1997-05-21 1999-04-27 Motorola, Inc. Circuit and method of limiting leakage current in a memory circuit
US8878334B1 (en) * 2012-03-23 2014-11-04 Altera Corporation Integrated circuit resistors with reduced parasitic capacitance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
JPS5814562A (ja) * 1981-07-17 1983-01-27 Toshiba Corp 半導体装置
JPS62224057A (ja) * 1986-03-26 1987-10-02 Hitachi Micro Comput Eng Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
US4903093A (en) 1990-02-20
JPS63305545A (ja) 1988-12-13

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