KR830006822A - 반도체집적회로장치 - Google Patents

반도체집적회로장치 Download PDF

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Publication number
KR830006822A
KR830006822A KR1019810002800A KR810002800A KR830006822A KR 830006822 A KR830006822 A KR 830006822A KR 1019810002800 A KR1019810002800 A KR 1019810002800A KR 810002800 A KR810002800 A KR 810002800A KR 830006822 A KR830006822 A KR 830006822A
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South Korea
Prior art keywords
field effect
insulated gate
effect transistor
integrated circuit
semiconductor integrated
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KR1019810002800A
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English (en)
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KR880001592B1 (ko
Inventor
요시부미 안도오
다까시 사까모도
간지 요오
히사히로 모리우찌
스미아끼 다께이
Original Assignee
미다 가쓰시게
가부시기 가이샤 히다찌세이사꾸쇼
가모시다 겐이찌
히다찌 마이크로콤퓨터 엔지니어링 가부시기 가이샤
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Publication of KR830006822A publication Critical patent/KR830006822A/ko
Application granted granted Critical
Publication of KR880001592B1 publication Critical patent/KR880001592B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Protection Of Static Devices (AREA)

Abstract

내용 없음

Description

반도체집적회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본원 발명이 일실시예를 나타낸 회로도.
제 2 도는 그 등가회로도.

Claims (11)

  1. 도면에 표시하고 본문에 상술한 바와 같이, 외부단자와, 제1출력전극, 상기 외부단자에 접속된 제2출력 전극 및 신호출력용 게이트 전극을 포함하는 절연게이트형 전계효과 트랜지스터( 또는 MISFET)와, 상기 절연게이트형 전계효과 트랜지스터( 또는 MISFET)의 게이트 전극으로 공급되는 구동신호 형성용 구동회로와, 게이트 전극과 상기 구동회로의 출력단자 사이에 접속된 제1저항 수단으로 이루어지는 반도체 집적회로장치.
  2. 제2출력전극과 외부단자 사이에 접속된 제2저항수단을 포함하는 특허청구의 범위 1기재의 반도체집적회로장치.
  3. 제2저항수단의 저항이 제1저항수단의 저항보다 작게 반들어지는 특허청구의 범위 2기재의 반도체집적회로장치.
  4. 제1저항수단은 절연게이트형 전계효과 트랜지스터가 형성되는 반도체 기판(基板)상에 절연막을 통하여 형성된 저항체층으로 구성되는 특허청구의 범위 3기재의 반도체집적회로장치.
  5. 절연게이트형 전계효과 트랜지스터는 다결정 실리콘층과, 게이트 전극과 자동점합된 소오스 및 드레인 영역을 포함하고 그리고 저항체층이 전도형 다결절층으로 구성되는 특허청구의 범위 4 기재의 반도체 집접회로장치.
  6. 제2저항수단이 반도체 기판에 대하여 PN접합을 형성하는 반도체 저항체영역으로 구성되는 특허청구의 범위 4 기재의 반도체집적회로장치.
  7. 제1저항수단이 폴디드 패터언(folded patterkn)으로 형성되는 특허청구의 범위 4 기재의 반도체집적회로장치.
  8. 외부단자와 각기 신호출력용 외부단자에 접속된 드레인 전극을 가진 P-채널 및 N-채널형 절연게이트 전계효과 트랜지스터와, 상기 절연게이트 전계효과 트랜지스터의 게이트전극으로 공급되는 구동신호 형성용 구동회로와, 다결정 실리콘층으로 형성되고 게이트전극과 구동회로의 출력단자 사이에 접속된 제1 저항수단으로 이루어지는 반도체집적회로장치.
  9. 절연게이트형 전게효과 트랜지스터의 드레인전극과 외부단자 사이에 접속된 제2저항수단을 포함하는 특허청구의 범위 8 기재의 반도체집적회로장치.
  10. 출력신호 형성을 위한 복수개의 절연게이트형 전계효과 트랜지스터와, 상기 절연게이트형 전계효과 트랜지스터로부터 공급되는 출력신호와 조절되는 복수개의 외부단자와, 절연게이트형 전계효과 트랜지스터의 게이트전극으로 공급되는 구동신호 공급용 구동회로로 이루어지며, 복수개의 저항수단이 구동회로의 외부단자와 절연게이트형 전계효과 트랜지스터 사이에 접속되는 것을 특징으로 하는 반도체집적회로장치.
  11. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019810002800A 1980-08-20 1981-08-01 반도체집적회로장치 KR880001592B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11351880A JPS5737876A (en) 1980-08-20 1980-08-20 Semiconductor integrated circuit apparatus
JP80-113518 1980-08-20
JP80-113,518 1980-08-20

Publications (2)

Publication Number Publication Date
KR830006822A true KR830006822A (ko) 1983-10-06
KR880001592B1 KR880001592B1 (ko) 1988-08-24

Family

ID=14614368

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810002800A KR880001592B1 (ko) 1980-08-20 1981-08-01 반도체집적회로장치

Country Status (8)

Country Link
US (1) US4514646A (ko)
JP (1) JPS5737876A (ko)
KR (1) KR880001592B1 (ko)
DE (1) DE3131322A1 (ko)
GB (1) GB2089611B (ko)
HK (1) HK54486A (ko)
IN (1) IN154168B (ko)
MY (1) MY8600736A (ko)

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NL8302963A (nl) * 1983-08-24 1985-03-18 Cordis Europ Inrichting voor het selectief meten van ionen in een vloeistof.
JPS6066049U (ja) * 1983-10-12 1985-05-10 日本電気株式会社 Ｃ−ｍｏｓ型電界効果トランジスタ
JPS6115198A (ja) * 1984-06-30 1986-01-23 ヤマハ株式会社 情報入力装置
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
US4760292A (en) * 1986-10-29 1988-07-26 Eta Systems, Inc. Temperature compensated output buffer
DE3703838A1 (de) * 1987-02-07 1988-08-25 Hanning Elektro Werke Ansteuerverfahren zum schutz von mos-leistungstransistoren an induktiven lasten
FR2636481B1 (fr) * 1988-09-14 1990-11-30 Sgs Thomson Microelectronics Diode active integrable
US4990802A (en) * 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers
US5041741A (en) * 1990-09-14 1991-08-20 Ncr Corporation Transient immune input buffer
JP2517177B2 (ja) * 1991-02-13 1996-07-24 松下電器産業株式会社 音響発生装置
GB9414261D0 (en) * 1994-07-14 1994-08-31 Motorola Gmbh MOS N-channel transistor protection
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JPH11136111A (ja) * 1997-10-30 1999-05-21 Sony Corp 高周波回路
US6765774B2 (en) * 2001-12-28 2004-07-20 Iwatt, Inc. High impedance insertion system for blocking EMI

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Also Published As

Publication number Publication date
US4514646A (en) 1985-04-30
GB2089611A (en) 1982-06-23
KR880001592B1 (ko) 1988-08-24
HK54486A (en) 1986-08-01
JPS641067B2 (ko) 1989-01-10
JPS5737876A (en) 1982-03-02
DE3131322A1 (de) 1982-04-22
GB2089611B (en) 1984-08-01
IN154168B (ko) 1984-09-29
MY8600736A (en) 1986-12-31

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