KR920010900A - 반도체지연회로 - Google Patents

반도체지연회로 Download PDF

Info

Publication number
KR920010900A
KR920010900A KR1019910017674A KR910017674A KR920010900A KR 920010900 A KR920010900 A KR 920010900A KR 1019910017674 A KR1019910017674 A KR 1019910017674A KR 910017674 A KR910017674 A KR 910017674A KR 920010900 A KR920010900 A KR 920010900A
Authority
KR
South Korea
Prior art keywords
terminal
switching means
power supply
supply voltage
delay circuit
Prior art date
Application number
KR1019910017674A
Other languages
English (en)
Other versions
KR960001294B1 (ko
Inventor
다다루유끼 미야모토
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시기 모리야, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920010900A publication Critical patent/KR920010900A/ko
Application granted granted Critical
Publication of KR960001294B1 publication Critical patent/KR960001294B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H03K2005/0015—Layout of the delay element
    • H03K2005/00195—Layout of the delay element using FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Pulse Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

내용 없음

Description

반도체지연회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예를 표시하는 회로도, 제2도는 제어전압을 변화하게했을때의 지연시간과 전원전압의 관계를 표시하는 그래프, 제3도는 제1의 지연회로의 상세를 표시하는 회로도.

Claims (1)

  1. 반도체기판에 형성되는 반도체지연회로이고, 전원전압단자와, 접지단자와, 제1 및 제2의 도통단자 및 제어 단자를 포함하고, 상기 제1의 도통단자가 전원전압에 접속되어, 상기 제어단자에 입력되는 신호에 응답하고 스위칭하는 제1의 스위칭수단과, 상기 제1의 스위칭수단의 출력과 접지단자와의 사이에 접속되는 용량과, 상기 제1의 스위칭수단의 출력에 접속되어 스위칭수단의 출력이 일정레벨을 넘으면, 스위칭하는 제2의 스위칭수단과, 전원 전압의 변화에 응답하고, 전원전압의 약 2분의 1승에 비례하는 전압신호를 발생하는 제어전압발생수단과, 상기 제1의 스위칭수단의 제2의 도통단자에 드레인이 접속되어 상기 접지단자에 소스가 접속되어, 상기 제어전압발생 수단에 게이트가 접속되어, 상기 전압신호에 응답하여 구동능력이 변화하는 절연형 전계트랜지스터를 포함하는 반도체지연회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910017674A 1990-11-06 1991-10-09 반도체지연회로 KR960001294B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2301466A JPH04172711A (ja) 1990-11-06 1990-11-06 半導体遅延回路
JP90-301466 1990-11-06

Publications (2)

Publication Number Publication Date
KR920010900A true KR920010900A (ko) 1992-06-27
KR960001294B1 KR960001294B1 (ko) 1996-01-25

Family

ID=17897240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017674A KR960001294B1 (ko) 1990-11-06 1991-10-09 반도체지연회로

Country Status (4)

Country Link
US (1) US5164621A (ko)
JP (1) JPH04172711A (ko)
KR (1) KR960001294B1 (ko)
DE (1) DE4135030C2 (ko)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5764093A (en) * 1981-11-28 1998-06-09 Advantest Corporation Variable delay circuit
KR970005124B1 (ko) * 1991-08-14 1997-04-12 가부시끼가이샤 아드반테스트 가변지연회로
JPH0555881A (ja) * 1991-08-27 1993-03-05 Toshiba Corp 遅延回路
US5486774A (en) * 1991-11-26 1996-01-23 Nippon Telegraph And Telephone Corporation CMOS logic circuits having low and high-threshold voltage transistors
US5530400A (en) * 1991-11-29 1996-06-25 General Instruments Corp. Transistor circuit with transistor characteristic sensor
US5278460A (en) * 1992-04-07 1994-01-11 Micron Technology, Inc. Voltage compensating CMOS input buffer
US5300837A (en) * 1992-09-17 1994-04-05 At&T Bell Laboratories Delay compensation technique for buffers
JP2605565B2 (ja) * 1992-11-27 1997-04-30 日本電気株式会社 半導体集積回路
TW278280B (ko) * 1993-03-10 1996-06-11 Advanced Micro Devices Inc
US5352945A (en) * 1993-03-18 1994-10-04 Micron Semiconductor, Inc. Voltage compensating delay element
JPH0730378A (ja) * 1993-07-15 1995-01-31 Mitsubishi Electric Corp 発振回路
US5500818A (en) * 1993-10-29 1996-03-19 Sun Microsystems, Inc. Method and apparatus for providing accurate T(on) and T(off) times for the output of a memory array
US5552725A (en) * 1994-08-05 1996-09-03 Advanced Micro Devices, Inc. Low power, slew rate insensitive power-on reset circuit
JPH08130449A (ja) * 1994-11-01 1996-05-21 Mitsubishi Electric Corp 電圧制御型遅延回路およびそれを用いた内部クロック発生回路
JP3576561B2 (ja) * 1994-11-22 2004-10-13 モノリシック・システム・テクノロジー・インコーポレイテッド 第２レベルのキャシュメモリとしてｄｒａｍアレイを用いる方法及び構成
TW358907B (en) * 1994-11-22 1999-05-21 Monolithic System Tech Inc A computer system and a method of using a DRAM array as a next level cache memory
FR2731569B1 (fr) * 1995-03-07 1997-04-25 Thomson Tubes Electroniques Dispositif de recopie de tension a grande linearite
EP0741390A3 (en) * 1995-05-01 1997-07-23 Ibm Reference voltage generator for correcting the threshold voltage
US6128700A (en) 1995-05-17 2000-10-03 Monolithic System Technology, Inc. System utilizing a DRAM array as a next level cache memory and method for operating same
KR0142960B1 (ko) * 1995-05-25 1998-08-17 김광호 전원 변동에 안정된 반도체 메모리 장치
WO1997005700A1 (en) * 1995-07-31 1997-02-13 International Business Machines Corporation High-precision voltage dependent timing delay circuit
KR100187647B1 (ko) * 1995-12-29 1999-06-01 김주용 지연회로
DE19601569A1 (de) * 1996-01-17 1997-07-24 Siemens Ag Schaltungsanordnung zur Signalverzögerung
US5994937A (en) * 1996-11-06 1999-11-30 International Business Machines Corporation Temperature and power supply adjusted address transition detector
US5896054A (en) * 1996-12-05 1999-04-20 Motorola, Inc. Clock driver
KR100224669B1 (ko) * 1996-12-10 1999-10-15 윤종용 내부 전원 전압 발생기 회로
US5748542A (en) * 1996-12-13 1998-05-05 Micron Technology, Inc. Circuit and method for providing a substantially constant time delay over a range of supply voltages
US5892409A (en) * 1997-07-28 1999-04-06 International Business Machines Corporation CMOS process compensation circuit
US20030042571A1 (en) * 1997-10-23 2003-03-06 Baoxing Chen Chip-scale coils and isolators based thereon
US6262616B1 (en) * 1999-10-08 2001-07-17 Cirrus Logic, Inc. Open loop supply independent digital/logic delay circuit
US6624680B2 (en) * 2000-12-29 2003-09-23 Texas Instruments Incorporated Reduction of propagation delay dependence on supply voltage in a digital circuit
JP3831277B2 (ja) * 2001-12-28 2006-10-11 株式会社東芝 半導体装置
DE10262239B4 (de) 2002-09-18 2011-04-28 Infineon Technologies Ag Digitales Signalübertragungsverfahren
EP1618712A2 (en) * 2003-04-30 2006-01-25 Analog Devices, Inc. Signal isolators using micro-transformers
US7737871B2 (en) * 2004-06-03 2010-06-15 Silicon Laboratories Inc. MCU with integrated voltage isolator to provide a galvanic isolation between input and output
US7302247B2 (en) 2004-06-03 2007-11-27 Silicon Laboratories Inc. Spread spectrum isolator
US7821428B2 (en) 2004-06-03 2010-10-26 Silicon Laboratories Inc. MCU with integrated voltage isolator and integrated galvanically isolated asynchronous serial data link
US8441325B2 (en) * 2004-06-03 2013-05-14 Silicon Laboratories Inc. Isolator with complementary configurable memory
US7902627B2 (en) * 2004-06-03 2011-03-08 Silicon Laboratories Inc. Capacitive isolation circuitry with improved common mode detector
US7577223B2 (en) * 2004-06-03 2009-08-18 Silicon Laboratories Inc. Multiplexed RF isolator circuit
US8049573B2 (en) * 2004-06-03 2011-11-01 Silicon Laboratories Inc. Bidirectional multiplexed RF isolator
US7447492B2 (en) 2004-06-03 2008-11-04 Silicon Laboratories Inc. On chip transformer isolator
US8169108B2 (en) 2004-06-03 2012-05-01 Silicon Laboratories Inc. Capacitive isolator
US7738568B2 (en) * 2004-06-03 2010-06-15 Silicon Laboratories Inc. Multiplexed RF isolator
US8198951B2 (en) 2004-06-03 2012-06-12 Silicon Laboratories Inc. Capacitive isolation circuitry
US7460604B2 (en) 2004-06-03 2008-12-02 Silicon Laboratories Inc. RF isolator for isolating voltage sensing and gate drivers
JP2006352398A (ja) * 2005-06-15 2006-12-28 Sanyo Electric Co Ltd 遅延回路
JP4810132B2 (ja) * 2005-06-15 2011-11-09 三洋電機株式会社 遅延回路およびリップルコンバータ
JP4881582B2 (ja) * 2005-06-24 2012-02-22 三洋電機株式会社 遅延回路および駆動制御回路
US7719305B2 (en) * 2006-07-06 2010-05-18 Analog Devices, Inc. Signal isolator using micro-transformers
JP5747445B2 (ja) * 2009-05-13 2015-07-15 富士電機株式会社 ゲート駆動装置
US8451032B2 (en) 2010-12-22 2013-05-28 Silicon Laboratories Inc. Capacitive isolator with schmitt trigger
US9293997B2 (en) 2013-03-14 2016-03-22 Analog Devices Global Isolated error amplifier for isolated power supplies
US9660848B2 (en) 2014-09-15 2017-05-23 Analog Devices Global Methods and structures to generate on/off keyed carrier signals for signal isolators
US10536309B2 (en) 2014-09-15 2020-01-14 Analog Devices, Inc. Demodulation of on-off-key modulated signals in signal isolator systems
US10270630B2 (en) 2014-09-15 2019-04-23 Analog Devices, Inc. Demodulation of on-off-key modulated signals in signal isolator systems
US9998301B2 (en) 2014-11-03 2018-06-12 Analog Devices, Inc. Signal isolator system with protection for common mode transients
US10290608B2 (en) 2016-09-13 2019-05-14 Allegro Microsystems, Llc Signal isolator having bidirectional diagnostic signal exchange
US11115244B2 (en) 2019-09-17 2021-09-07 Allegro Microsystems, Llc Signal isolator with three state data transmission
CN112511134B (zh) * 2020-12-10 2023-07-28 成都锐成芯微科技股份有限公司 一种校正高占空比的时钟信号电路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599735A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp クロツク発生回路
JPH01137817A (ja) * 1987-11-25 1989-05-30 Toshiba Corp 遅延回路
EP0334983A1 (de) * 1988-03-31 1989-10-04 Deutsche ITT Industries GmbH Integrierte CMOS/NMOS-Schaltung
US5068553A (en) * 1988-10-31 1991-11-26 Texas Instruments Incorporated Delay stage with reduced Vdd dependence
US5051630A (en) * 1990-03-12 1991-09-24 Tektronix, Inc. Accurate delay generator having a compensation feature for power supply voltage and semiconductor process variations

Also Published As

Publication number Publication date
DE4135030C2 (de) 1994-09-08
JPH04172711A (ja) 1992-06-19
DE4135030A1 (de) 1992-05-07
KR960001294B1 (ko) 1996-01-25
US5164621A (en) 1992-11-17

Similar Documents

Publication Publication Date Title
KR920010900A (ko) 반도체지연회로
KR880012008A (ko) 전원절환회로
KR930003558A (ko) 출력회로
KR840006895A (ko) 인터페이스 회로
KR950015989A (ko) 캐패시터와 트랜지스터를 사용하는 지연 회로
KR960030546A (ko) 스위치회로 및 복합스위치회로
KR950020014A (ko) 기준 전류 발생 회로
KR880001108A (ko) Cmos 입력회로
KR900000968A (ko) 반도체 시간 지연소자
KR890016759A (ko) 파워 전계 효과 트랜지스터 구동회로
KR910010723A (ko) 소메모리셀 면적에서 고안정성을 갖는 반도체기억장치
KR870009238A (ko) 고전압검출회로
KR910015114A (ko) 반도체 디지탈 회로
KR860007753A (ko) 반도체 집전회로
KR890005992A (ko) 상보신호 출력회로
KR910019342A (ko) 기준전압과 상응한 출력신호를 공급하는 버퍼회로
KR910002116A (ko) 반도체 장치를 위한 전압 발생회로
KR910008863A (ko) 반도체 집적회로
KR900002552A (ko) 출력회로
KR890015507A (ko) 전원전압상승검출회로
KR960035626A (ko) 파워 온 리셋 회로
KR900019315A (ko) 전압 레벨 전환 회로
KR880004564A (ko) 반도체 집적회로
KR910014942A (ko) 출력회로
KR930005369A (ko) 레벨변환회로

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20000111

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee