JPS5529108A - Semiconductor resistance element - Google Patents
Semiconductor resistance elementInfo
- Publication number
- JPS5529108A JPS5529108A JP10178078A JP10178078A JPS5529108A JP S5529108 A JPS5529108 A JP S5529108A JP 10178078 A JP10178078 A JP 10178078A JP 10178078 A JP10178078 A JP 10178078A JP S5529108 A JPS5529108 A JP S5529108A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- resistance
- poly
- construction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Abstract
PURPOSE:To control resistivity by adding p-type impurities to an n-type polycrystal or amorphous resistance layer built up on the insulating layer of a substrate. CONSTITUTION:If an n-type poly Si resistance layer on an insulating film 2 is built up, and if an n<+> layer for the portion operating as an electrode is prepared, the element changes the value of resistance easily with heat treatment and hydrogen treatment at relatively low temperatures. Therefore, a poly Si resistance portion 5 is now transformed into a p-type layer with the density of approximately 10<13>- 5X10<14>cm<-2> by injecting B ions so as to make it into a n<+>-p-n<+> construction. Although this construction is inferior to n<+>-n-n<+> construction in view of the linearity of voltage-current characteristics, it can prevent the surface of poly Si from changing into n-type which is the cause of characteristic alteration, and the greater the amount of B addition, the more it is stabilized. Furthermore, the addition of P may be considered, but it is rather difficult to make the element smaller in the case of P, therefore the use of B or Sb can reduce the characteristic changes of MOS high resistance elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10178078A JPS5529108A (en) | 1978-08-23 | 1978-08-23 | Semiconductor resistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10178078A JPS5529108A (en) | 1978-08-23 | 1978-08-23 | Semiconductor resistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529108A true JPS5529108A (en) | 1980-03-01 |
Family
ID=14309698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10178078A Pending JPS5529108A (en) | 1978-08-23 | 1978-08-23 | Semiconductor resistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529108A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871648A (en) * | 1981-10-23 | 1983-04-28 | Nec Corp | Semiconductor device |
US4514646A (en) * | 1980-08-20 | 1985-04-30 | Hitachi, Ltd. | Semiconductor integrated circuit device including a protective resistor arrangement for output transistors |
US4604641A (en) * | 1981-11-30 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JPS63158852A (en) * | 1986-12-22 | 1988-07-01 | Mitsubishi Electric Corp | Semiconductor device |
JPS63174369A (en) * | 1987-01-14 | 1988-07-18 | Mitsubishi Electric Corp | Semiconductor device |
US5670820A (en) * | 1987-05-01 | 1997-09-23 | Inmos Limited | Semiconductor element incorporating a resistive device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5449082A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Semiconductor device |
-
1978
- 1978-08-23 JP JP10178078A patent/JPS5529108A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5449082A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4514646A (en) * | 1980-08-20 | 1985-04-30 | Hitachi, Ltd. | Semiconductor integrated circuit device including a protective resistor arrangement for output transistors |
JPS5871648A (en) * | 1981-10-23 | 1983-04-28 | Nec Corp | Semiconductor device |
JPH0131704B2 (en) * | 1981-10-23 | 1989-06-27 | Nippon Electric Co | |
US4604641A (en) * | 1981-11-30 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JPS63158852A (en) * | 1986-12-22 | 1988-07-01 | Mitsubishi Electric Corp | Semiconductor device |
JPS63174369A (en) * | 1987-01-14 | 1988-07-18 | Mitsubishi Electric Corp | Semiconductor device |
US5670820A (en) * | 1987-05-01 | 1997-09-23 | Inmos Limited | Semiconductor element incorporating a resistive device |
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