JPS5583253A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5583253A
JPS5583253A JP15835378A JP15835378A JPS5583253A JP S5583253 A JPS5583253 A JP S5583253A JP 15835378 A JP15835378 A JP 15835378A JP 15835378 A JP15835378 A JP 15835378A JP S5583253 A JPS5583253 A JP S5583253A
Authority
JP
Japan
Prior art keywords
layer
region
transistor
controlled
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15835378A
Other languages
Japanese (ja)
Other versions
JPS5923474B2 (en
Inventor
Toshihiko Ono
Hiroo Morimoto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53158353A priority Critical patent/JPS5923474B2/ja
Publication of JPS5583253A publication Critical patent/JPS5583253A/en
Publication of JPS5923474B2 publication Critical patent/JPS5923474B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To avoid the deterioration of the characteristics of transistor and Schottky barrier diode by employing titanium (Ti) controlled in its thickness as the lower layer of an electrode and aluminum controlled in its content as the lower layer thereof when forming the transistor and the Schottky barrier diode on the same semiconductor substrate.
CONSTITUTION: A p-type base region 5 is formed for a transistor in an n-type silicon substrate 1 becoming a collector, and an n-type emitter region 6 is similarly formed for the transistor therein, and an insulating film 2 is coated on the entire surface thereof. Then, a predetermined opening is perforated in the film 2, and polycrystalline silicon conductive layer 7 making contact with the regions 5 and 6 is formed while extending it on the film 2 in such a manner that the region I making contact with the region 5 is employed as a Schottky barrier diode and the region II making contact with the region 6 as a transistor. Then an aluminum layer 8 containing silicon is coated through the Ti layer 3 having approx. 100Å thick on the layer 7 as a electrode. At this time the layer 3 is selected not only from Ti but Hf, Cr, etc., and the silicon amount contained in the layer 8 is controlled by weight to higher than 0.6%.
COPYRIGHT: (C)1980,JPO&Japio
JP53158353A 1978-12-19 1978-12-19 Expired JPS5923474B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53158353A JPS5923474B2 (en) 1978-12-19 1978-12-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53158353A JPS5923474B2 (en) 1978-12-19 1978-12-19

Publications (2)

Publication Number Publication Date
JPS5583253A true JPS5583253A (en) 1980-06-23
JPS5923474B2 JPS5923474B2 (en) 1984-06-02

Family

ID=15669793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53158353A Expired JPS5923474B2 (en) 1978-12-19 1978-12-19

Country Status (1)

Country Link
JP (1) JPS5923474B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745228A (en) * 1980-08-29 1982-03-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6066465A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device
JPS61216362A (en) * 1985-03-20 1986-09-26 Sanyo Electric Co Ltd Manufacture of high-frequency transistor
JPS61216361A (en) * 1985-03-20 1986-09-26 Sanyo Electric Co Ltd Forming method of electrode
JPS62235774A (en) * 1986-04-07 1987-10-15 Matsushita Electronics Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380966A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Manufacture of electrode fdr semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380966A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Manufacture of electrode fdr semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745228A (en) * 1980-08-29 1982-03-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6066465A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device
JPS61216362A (en) * 1985-03-20 1986-09-26 Sanyo Electric Co Ltd Manufacture of high-frequency transistor
JPS61216361A (en) * 1985-03-20 1986-09-26 Sanyo Electric Co Ltd Forming method of electrode
JPS62235774A (en) * 1986-04-07 1987-10-15 Matsushita Electronics Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5923474B2 (en) 1984-06-02

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