KR920000146A - 고전압 직접회로 - Google Patents

고전압 직접회로 Download PDF

Info

Publication number
KR920000146A
KR920000146A KR1019900018872A KR900018872A KR920000146A KR 920000146 A KR920000146 A KR 920000146A KR 1019900018872 A KR1019900018872 A KR 1019900018872A KR 900018872 A KR900018872 A KR 900018872A KR 920000146 A KR920000146 A KR 920000146A
Authority
KR
South Korea
Prior art keywords
integrated circuit
high voltage
voltage integrated
circuit according
stable layer
Prior art date
Application number
KR1019900018872A
Other languages
English (en)
Other versions
KR960001614B1 (ko
Inventor
케리 임레
Original Assignee
에케 스타브링, 타게 뢰브그렌
테레포오낙티이에보라켓트 엘 엠 엘리크썬
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에케 스타브링, 타게 뢰브그렌, 테레포오낙티이에보라켓트 엘 엠 엘리크썬 filed Critical 에케 스타브링, 타게 뢰브그렌
Publication of KR920000146A publication Critical patent/KR920000146A/ko
Application granted granted Critical
Publication of KR960001614B1 publication Critical patent/KR960001614B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Dicing (AREA)

Abstract

내용 없음

Description

고전압 직접회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명이 해결해야 할 문제점을 예시한 예시도,
제5도는 본 발명을 따르는 직접회로의 단면도,
제6도는 본 발명을 따르는 직접회로의 단면도.

Claims (5)

  1. 대지 또는 대지에 가까운 전위에 접속된 급속도체(30),(32)가 연결되고 안정층(18)에 의해 덮혀진 고전압 직접회로에 있어서, 안정층(18)은 금속도체(30),(32)위에서 부분적으로 나누어진 형태(34),(36)로 되어 MOS형 트랜지스터의 기생발생을 방지하는 것을 특징으로 하는 상기 고전압 직접회로.
  2. 제1항에 있어서, 안정층(18)은 금속도체(30),(32)위에 슬롯이 형성된 것을 특징으로 하는 고전압 직접회로.
  3. 제2항에 있어서, 슬롯들이 서로가 인접한 것을 특징으로 하는 고전압 직접회로.
  4. 제2 또는 3항에 있어서, 슬롯들(34),(36)은 나비가 수 ㎛인 것을 특징으로 하는 고전압 직접회로.
  5. 선행항중 어떤항에 있어서, 금속도체위에서 나누어진 형태들은 처리단계가 같고 결합패드 및 스크라이브선과 같은 마스크에 형성된 것을 특징으로 하는 고전압 직접회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018872A 1989-12-06 1990-11-21 고전압 집적회로 KR960001614B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE8904120-6 1989-12-06
SE8904120A SE465193B (sv) 1989-12-06 1989-12-06 Foer hoegspaenning avsedd ic-krets

Publications (2)

Publication Number Publication Date
KR920000146A true KR920000146A (ko) 1992-01-10
KR960001614B1 KR960001614B1 (ko) 1996-02-02

Family

ID=20377705

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018872A KR960001614B1 (ko) 1989-12-06 1990-11-21 고전압 집적회로

Country Status (5)

Country Link
US (1) US5861656A (ko)
KR (1) KR960001614B1 (ko)
GB (1) GB2238910B (ko)
IT (1) IT1243934B (ko)
SE (1) SE465193B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
JP4493741B2 (ja) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1026732A1 (en) * 1999-02-05 2000-08-09 Motorola, Inc. A method of forming a high voltage semiconductor device
US6580107B2 (en) * 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
JP2003229502A (ja) * 2002-02-01 2003-08-15 Mitsubishi Electric Corp 半導体装置
US6683329B2 (en) * 2002-02-28 2004-01-27 Oki Electric Industry Co., Ltd. Semiconductor device with slot above guard ring

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
US3611071A (en) * 1969-04-10 1971-10-05 Ibm Inversion prevention system for semiconductor devices
JPS4836598B1 (ko) * 1969-09-05 1973-11-06
JPS4914390B1 (ko) * 1969-10-29 1974-04-06
JPS501872B1 (ko) * 1970-01-30 1975-01-22
JPS4940394B1 (ko) * 1970-08-28 1974-11-01
DE2603747A1 (de) * 1976-01-31 1977-08-04 Licentia Gmbh Integrierte schaltungsanordnung
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
JPS6066444A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置
JPS60247940A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd 半導体装置およびその製造方法
US4606998A (en) * 1985-04-30 1986-08-19 International Business Machines Corporation Barrierless high-temperature lift-off process
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
JPH01184942A (ja) * 1988-01-20 1989-07-24 Toshiba Corp トリミング素子とその電気短絡方法
JPH0237776A (ja) * 1988-07-28 1990-02-07 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
SE8904120D0 (sv) 1989-12-06
GB2238910B (en) 1993-08-11
GB9024952D0 (en) 1991-01-02
GB2238910A (en) 1991-06-12
SE8904120L (sv) 1991-06-07
KR960001614B1 (ko) 1996-02-02
IT9022201A0 (it) 1990-11-27
IT1243934B (it) 1994-06-28
SE465193B (sv) 1991-08-05
US5861656A (en) 1999-01-19
IT9022201A1 (it) 1991-06-07

Similar Documents

Publication Publication Date Title
KR840006872A (ko) 반도체 집적회로장치 및 그 제조방법
KR850000804A (ko) 반도체 장치
KR910010728A (ko) 복합형 직접회로소자
KR910005448A (ko) 반도체 집적회로
KR910003801A (ko) 반도체 집적회로장치 및 그 제조방법
KR920000146A (ko) 고전압 직접회로
KR910007159A (ko) Mos형 반도체장치
KR880002270A (ko) 대규모 집적회로용 보호회로
KR900013658A (ko) Bi-CMOS반도체장치
KR900005593A (ko) 반도체장치
KR910017623A (ko) 반도체 장치
KR910017624A (ko) 반도체집적회로장치
KR920001711A (ko) 반도체집적회로
KR900019220A (ko) 반도체장치
KR900004040A (ko) 반도체 집적회로 디바이스
KR920005391A (ko) 바이폴라 트랜지스터 · 절연 게이트형 트랜지스터 혼재 반도체장치
KR890007404A (ko) 다층 배선 집적 반도체 회로
KR900001025A (ko) 반도체장치
KR890008966A (ko) 반도체장치의 배선접속부
KR850005159A (ko) 기판에 전원 공급 통로를 가진 반도체 집적회로
KR910010742A (ko) 반도체 집적회로장치
KR910010711A (ko) 집적 회로 장치
KR890008977A (ko) 기판전위검출회로
KR910001889A (ko) 반도체장치
KR840008218A (ko) 반도체 장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100128

Year of fee payment: 15

EXPY Expiration of term