KR840008218A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR840008218A
KR840008218A KR1019840001546A KR840001546A KR840008218A KR 840008218 A KR840008218 A KR 840008218A KR 1019840001546 A KR1019840001546 A KR 1019840001546A KR 840001546 A KR840001546 A KR 840001546A KR 840008218 A KR840008218 A KR 840008218A
Authority
KR
South Korea
Prior art keywords
region
conductive type
emitter
collector
semiconductor devices
Prior art date
Application number
KR1019840001546A
Other languages
English (en)
Inventor
히로카즈 후꾸다 (외 1)
Original Assignee
사바 쇼오이찌
도오쿄오 시바우라덴기 가부시기 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사바 쇼오이찌, 도오쿄오 시바우라덴기 가부시기 가이샤 filed Critical 사바 쇼오이찌
Publication of KR840008218A publication Critical patent/KR840008218A/ko
Priority to KR2019870011144U priority Critical patent/KR870003346Y1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7327—Inverse vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 ALC회로도.
제7도는 본 발명의 한 실시예의 패턴 평면도.
제8도는 동 단면 구조도.

Claims (2)

  1. 반도체기체의 일주면에 형성된 제1도 전형의 제1영역과, 이제1영역내에 형성된 제2도 전형의 제2영역과, 이 제2영역내에 형성된 제1도전형의 제3영역과, 상기 제2영역 및 제1영역에 걸쳐서 상기 제2영역의 주위에 형성된 제1도전형의 영역과 상기 제1영역을 콜렉터로 하고, 제2영역을 베이스로 하고, 제3영역을 에미터로 해서 사용하여 베이스전류를 변화시키므로써 콜렉터, 에미터간의 포화저항을 변화시키는 수단을 구비한 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 제1영역을 에미터로 하고, 상기 제3영역을 콜렉터로 하여 사용하는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840001546A 1983-03-31 1984-03-26 반도체 장치 KR840008218A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019870011144U KR870003346Y1 (ko) 1984-03-26 1987-07-08 자동출력 레벨 제어회로

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56095 1983-03-31
JP58056095A JPS59181667A (ja) 1983-03-31 1983-03-31 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR2019870011144U Division KR870003346Y1 (ko) 1984-03-26 1987-07-08 자동출력 레벨 제어회로

Publications (1)

Publication Number Publication Date
KR840008218A true KR840008218A (ko) 1984-12-13

Family

ID=13017541

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840001546A KR840008218A (ko) 1983-03-31 1984-03-26 반도체 장치

Country Status (4)

Country Link
EP (1) EP0121198B1 (ko)
JP (1) JPS59181667A (ko)
KR (1) KR840008218A (ko)
DE (1) DE3485910T2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63162550U (ko) * 1987-04-10 1988-10-24

Also Published As

Publication number Publication date
JPS59181667A (ja) 1984-10-16
EP0121198B1 (en) 1992-09-09
DE3485910D1 (de) 1992-10-15
DE3485910T2 (de) 1993-03-11
EP0121198A2 (en) 1984-10-10
EP0121198A3 (en) 1988-01-20

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Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E601 Decision to refuse application
WICV Withdrawal of application forming a basis of a converted application